JPWO2024080071A1 - - Google Patents
Info
- Publication number
- JPWO2024080071A1 JPWO2024080071A1 JP2024551339A JP2024551339A JPWO2024080071A1 JP WO2024080071 A1 JPWO2024080071 A1 JP WO2024080071A1 JP 2024551339 A JP2024551339 A JP 2024551339A JP 2024551339 A JP2024551339 A JP 2024551339A JP WO2024080071 A1 JPWO2024080071 A1 JP WO2024080071A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022163339 | 2022-10-11 | ||
| PCT/JP2023/033534 WO2024080071A1 (ja) | 2022-10-11 | 2023-09-14 | 炭化珪素結晶基板、エピタキシャル基板および半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024080071A1 true JPWO2024080071A1 (enrdf_load_stackoverflow) | 2024-04-18 |
| JPWO2024080071A5 JPWO2024080071A5 (enrdf_load_stackoverflow) | 2025-06-24 |
Family
ID=90669541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024551339A Pending JPWO2024080071A1 (enrdf_load_stackoverflow) | 2022-10-11 | 2023-09-14 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2024080071A1 (enrdf_load_stackoverflow) |
| WO (1) | WO2024080071A1 (enrdf_load_stackoverflow) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6200018B2 (ja) * | 2016-03-15 | 2017-09-20 | 新日鉄住金マテリアルズ株式会社 | 炭化珪素単結晶ウェハ |
| WO2018066173A1 (ja) * | 2016-10-04 | 2018-04-12 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法 |
-
2023
- 2023-09-14 JP JP2024551339A patent/JPWO2024080071A1/ja active Pending
- 2023-09-14 WO PCT/JP2023/033534 patent/WO2024080071A1/ja active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2024080071A1 (ja) | 2024-04-18 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241031 |