JP6195041B1 - 化合物半導体デバイスの製造方法 - Google Patents
化合物半導体デバイスの製造方法 Download PDFInfo
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- JP6195041B1 JP6195041B1 JP2017522679A JP2017522679A JP6195041B1 JP 6195041 B1 JP6195041 B1 JP 6195041B1 JP 2017522679 A JP2017522679 A JP 2017522679A JP 2017522679 A JP2017522679 A JP 2017522679A JP 6195041 B1 JP6195041 B1 JP 6195041B1
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- passivation film
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- field plate
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- compound semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 150000001875 compounds Chemical class 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title description 5
- 238000002161 passivation Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 28
- 230000005684 electric field Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (1)
- 基板上に半導体層を形成する工程と、
前記半導体層上にゲート電極、ソース電極及びドレイン電極を形成する工程と、
前記ゲート電極及び前記半導体層を覆う第1のパッシベーション膜を形成する工程と、
前記第1のパッシベーション膜上に、前記ドレイン電極から前記ゲート電極と前記ドレイン電極との間まで延びたレジストを成膜する工程と、
前記第1のパッシベーション膜及び前記レジスト上に導電膜を形成し、前記レジスト及び前記レジスト上の前記導電膜を除去してソースフィールドプレートを形成する工程と、
前記第1のパッシベーション膜及び前記ソースフィールドプレートを覆う第2のパッシベーション膜を形成する工程とを備え、
前記レジストの成膜時に熱処理を行うことで前記レジストを収縮させ、側面が凹状に熱だれした形状とすることを特徴とする化合物半導体デバイスの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016208085 | 2016-10-24 | ||
JP2016208085 | 2016-10-24 | ||
PCT/JP2016/088493 WO2018078892A1 (ja) | 2016-10-24 | 2016-12-22 | 化合物半導体デバイス及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP6195041B1 true JP6195041B1 (ja) | 2017-09-13 |
JPWO2018078892A1 JPWO2018078892A1 (ja) | 2018-10-25 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017522679A Active JP6195041B1 (ja) | 2016-10-24 | 2016-12-22 | 化合物半導体デバイスの製造方法 |
Country Status (2)
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JP (1) | JP6195041B1 (ja) |
DE (1) | DE112016007368B4 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299443A (ja) * | 2001-03-30 | 2002-10-11 | Fujitsu Quantum Devices Ltd | 半導体装置及びその製造方法 |
WO2006132419A1 (ja) * | 2005-06-10 | 2006-12-14 | Nec Corporation | 電界効果トランジスタ |
JP2010067693A (ja) * | 2008-09-09 | 2010-03-25 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2015192060A (ja) * | 2014-03-28 | 2015-11-02 | 株式会社東芝 | 電界効果トランジスタおよびその製造方法 |
JP2016058721A (ja) * | 2014-09-08 | 2016-04-21 | 株式会社デンソー | 半導体装置 |
JP2016171197A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006253654A (ja) | 2005-02-10 | 2006-09-21 | Nec Electronics Corp | 電界効果トランジスタおよび電界効果トランジスタの製造方法 |
JP5386785B2 (ja) | 2007-03-26 | 2014-01-15 | サンケン電気株式会社 | 半導体装置およびその製造方法 |
JP2015170821A (ja) | 2014-03-10 | 2015-09-28 | 古河電気工業株式会社 | 窒化物半導体装置、電界効果トランジスタおよびカスコード接続回路 |
-
2016
- 2016-12-22 DE DE112016007368.2T patent/DE112016007368B4/de active Active
- 2016-12-22 JP JP2017522679A patent/JP6195041B1/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002299443A (ja) * | 2001-03-30 | 2002-10-11 | Fujitsu Quantum Devices Ltd | 半導体装置及びその製造方法 |
WO2006132419A1 (ja) * | 2005-06-10 | 2006-12-14 | Nec Corporation | 電界効果トランジスタ |
JP2010067693A (ja) * | 2008-09-09 | 2010-03-25 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2015192060A (ja) * | 2014-03-28 | 2015-11-02 | 株式会社東芝 | 電界効果トランジスタおよびその製造方法 |
JP2016058721A (ja) * | 2014-09-08 | 2016-04-21 | 株式会社デンソー | 半導体装置 |
JP2016171197A (ja) * | 2015-03-12 | 2016-09-23 | 株式会社東芝 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
DE112016007368B4 (de) | 2022-01-20 |
DE112016007368T5 (de) | 2019-07-11 |
JPWO2018078892A1 (ja) | 2018-10-25 |
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