JP6194034B2 - 蒸着装置及び蒸着方法 - Google Patents

蒸着装置及び蒸着方法 Download PDF

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JP6194034B2
JP6194034B2 JP2016025526A JP2016025526A JP6194034B2 JP 6194034 B2 JP6194034 B2 JP 6194034B2 JP 2016025526 A JP2016025526 A JP 2016025526A JP 2016025526 A JP2016025526 A JP 2016025526A JP 6194034 B2 JP6194034 B2 JP 6194034B2
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supply line
temperature rising
processing space
processing
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JP2017110286A (ja
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ジンウ イ
ジンウ イ
ジョンス パク
ジョンス パク
ビュンスン ホ
ビュンスン ホ
ドキュン ハ
ドキュン ハ
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チャム エンジニアリング カンパニー リミテッド
チャム エンジニアリング カンパニー リミテッド
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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Health & Medical Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2016025526A 2015-12-14 2016-02-15 蒸着装置及び蒸着方法 Active JP6194034B2 (ja)

Applications Claiming Priority (2)

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KR10-2015-0178600 2015-12-14
KR1020150178600A KR101765244B1 (ko) 2015-12-14 2015-12-14 증착 장치 및 증착 방법

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JP2017110286A JP2017110286A (ja) 2017-06-22
JP6194034B2 true JP6194034B2 (ja) 2017-09-06

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JP (1) JP6194034B2 (ko)
KR (1) KR101765244B1 (ko)
TW (2) TWI604085B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101925579B1 (ko) 2017-06-23 2018-12-05 참엔지니어링(주) 증착 장치
KR102100801B1 (ko) * 2018-04-12 2020-04-14 참엔지니어링(주) 증착 장치 및 방법
KR102310047B1 (ko) 2019-06-07 2021-10-08 참엔지니어링(주) 증착 장치
KR102314016B1 (ko) * 2019-10-14 2021-10-19 주식회사 서연이화 레이더 전파 투과형 커버의 제조방법
KR102170451B1 (ko) 2020-01-22 2020-10-28 (주)이큐테크플러스 프리커서와 반응가스를 함께 분사하는 라디컬 유닛 및 이를 포함하는 ald장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6154041A (ja) * 1984-08-25 1986-03-18 Hitachi Maxell Ltd 磁気記録媒体の製造方法
JPS6350474A (ja) * 1986-08-21 1988-03-03 Hitachi Ltd 磁性薄膜の形成方法
JP3082716B2 (ja) * 1997-08-08 2000-08-28 日本電気株式会社 レーザcvd装置及び方法
KR100613018B1 (ko) * 2002-03-19 2006-08-14 가부시끼가이샤 에키쇼 센탄 기쥬츠 가이하쯔 센터 배선 금속층의 형성방법, 금속을 선택적으로 형성하는 방법
JP2005171272A (ja) * 2003-12-08 2005-06-30 Sony Corp レーザcvd装置
JP5114960B2 (ja) 2006-10-03 2013-01-09 ソニー株式会社 加工装置、及び配線基板の製造装置
JP5476519B2 (ja) * 2010-01-20 2014-04-23 株式会社ブイ・テクノロジー レーザ加工装置
JP5994090B2 (ja) * 2012-02-29 2016-09-21 株式会社ブイ・テクノロジー レーザ加工装置
JP2014019937A (ja) * 2012-07-23 2014-02-03 Omron Corp レーザ加工装置

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Publication number Publication date
TW201732076A (zh) 2017-09-16
JP2017110286A (ja) 2017-06-22
KR101765244B1 (ko) 2017-08-07
KR20170070947A (ko) 2017-06-23
TW201720949A (zh) 2017-06-16
TWI604085B (zh) 2017-11-01
TWI634232B (zh) 2018-09-01

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