JP6180372B2 - 半導体素子の検査方法および検査装置 - Google Patents

半導体素子の検査方法および検査装置 Download PDF

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JP6180372B2
JP6180372B2 JP2014117730A JP2014117730A JP6180372B2 JP 6180372 B2 JP6180372 B2 JP 6180372B2 JP 2014117730 A JP2014117730 A JP 2014117730A JP 2014117730 A JP2014117730 A JP 2014117730A JP 6180372 B2 JP6180372 B2 JP 6180372B2
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semiconductor element
short
time
circuit
leakage current
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JP2015230279A5 (enExample
JP2015230279A (ja
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和田　幸彦
幸彦 和田
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to DE102015108721.9A priority patent/DE102015108721B4/de
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
JP2014117730A 2014-06-06 2014-06-06 半導体素子の検査方法および検査装置 Active JP6180372B2 (ja)

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JP2014117730A JP6180372B2 (ja) 2014-06-06 2014-06-06 半導体素子の検査方法および検査装置
DE102015108721.9A DE102015108721B4 (de) 2014-06-06 2015-06-02 Untersuchungsverfahren und Untersuchungsvorrichtung für ein Halbleiterelement

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JP2014117730A JP6180372B2 (ja) 2014-06-06 2014-06-06 半導体素子の検査方法および検査装置

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JP2015230279A JP2015230279A (ja) 2015-12-21
JP2015230279A5 JP2015230279A5 (enExample) 2016-11-24
JP6180372B2 true JP6180372B2 (ja) 2017-08-16

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DE (1) DE102015108721B4 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102469942B1 (ko) * 2016-04-19 2022-11-22 엘에스일렉트릭(주) 인버터 스위칭 소자의 온도추정을 위한 파라미터 결정장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5764179A (en) * 1980-10-06 1982-04-19 Mitsubishi Electric Corp Testing method for semiconductor device
JP2005345247A (ja) * 2004-06-02 2005-12-15 Toyota Motor Corp 半導体素子の評価装置
JP5045325B2 (ja) 2007-09-14 2012-10-10 トヨタ自動車株式会社 トランジスタの検査方法と検査装置
JP5258810B2 (ja) 2010-02-17 2013-08-07 三菱電機株式会社 半導体装置の試験装置
WO2013016643A2 (en) * 2011-07-28 2013-01-31 Integrated Technology Corporation Damage reduction method and apparatus for destructive testing of power semiconductors

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DE102015108721A1 (de) 2015-12-10
JP2015230279A (ja) 2015-12-21
DE102015108721B4 (de) 2018-07-12

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