JP6178850B2 - 接続構造体、及び半導体装置 - Google Patents
接続構造体、及び半導体装置 Download PDFInfo
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- JP6178850B2 JP6178850B2 JP2015524118A JP2015524118A JP6178850B2 JP 6178850 B2 JP6178850 B2 JP 6178850B2 JP 2015524118 A JP2015524118 A JP 2015524118A JP 2015524118 A JP2015524118 A JP 2015524118A JP 6178850 B2 JP6178850 B2 JP 6178850B2
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- metal layer
- porous metal
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- metal
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Images
Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Description
金属粒子を配合した加熱接合用のペーストや板状の成形体を用いて、電子部品(例えば半導体チップ)を加圧下で加熱・焼結して基板等に接合する方法が知られている。特許文献1では金属微粒子の周囲を有機物で被覆した複合型金属ナノ材料での接合が開示されている。
また、特許文献2によると銅の金属粉末と接着材により接合する方法が開示されている。
(1)被接続体(B)上に、接続体である多孔質金属層(A)を介して被接続体(C)が接合されている接続構造体であって、
多孔質金属層(A)における、空孔率が2〜38体積%であり、
多孔質金属層(A)は略楕円体形状の空孔(h)を有し、多孔質金属層(A)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、
断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、
かつ、断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmであることを特徴とする接続構造体(以下、第1の実施形態ということがある)。
(2)断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が50〜57度であることを特徴とする、前記(1)に記載の接続構造体。
(3)前記多孔質金属層(A)を形成する金属が金、銀、銅、アルミニウム、クロム、ニッケル、チタン、コバルト、及びインジウムから選択された1種、又は2種以上であることを特徴とする、前記(1)又は(2)に記載の接続構造体。
(5)前記多孔質金属層(A)に形成された空孔(h)の少なくとも一部に、耐熱性樹脂(R)が充填されていることを特徴とする、前記(1)から(4)のいずれかに記載の接続構造体。
(6)少なくとも、セラミック基板と、その上に形成された金属回路からなる配線基板(i)、
多孔質金属層(ii)、導体層(iii)、ダイボンド接合層(iv)、半導体素子(v)
がこの順に積層された構造を有する半導体装置であって、
多孔質金属層(ii)における、空孔率が2〜38体積%であり、
多孔質金属層(ii)は略楕円体形状の空孔(h)を有し、多孔質金属層(ii)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、
断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、
かつ、断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmであることを特徴とする、半導体装置(以下、第2の実施形態ということがある)。
〔1〕接続構造体(第1の実施形態)
以下に本発明の第1の実施形態である、接続構造体について説明する。
本発明の第1の実施形態の接続構造体は、被接続体(B)上に、接続体である多孔質金属層(A)を介して被接続体(C)が接合されている接続構造体であって、多孔質金属層(A)における、空孔率が2〜38体積%であり、多孔質金属層(A)は略楕円体形状の空孔(h)を有し、多孔質金属層(A)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、かつ、断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmであることを特徴とする。
本発明の接続構造体は、多孔質金属層(A)を介して被接続体(B)と被接続体(C)とが接合されている接続構造体であり、特に電気・電子部品に好適に使用することができる。以下に本発明の接続構造体を構成する(1)被接続体、(2)多孔質金属層(A)、(3)多孔質金属層(A)の形成、(4)接続構造体について説明する。
本発明の接続構造体が電気・電子部品である場合には、例えば、以下に記載するように、半導体モジュールを作製する場合には、一方の被接続体(B)は基板等とし、他方の被接続体(C)を半導体素子等とすることができる。また、セラミック回路基板を作製する場合には、一方の被接続体(B)は基板等とし、他方の被接続体(C)を金属箔等とすることができる。
半導体装置に使用する基板(K)は、セラミックス等の絶縁層の一方の面上に銅板等の導体パターンをめっきやスパッタ、あるいは、ロウ材等で接合して形成したもの、セラミック基板に直接電極板を接合したDBC(Direct Bonded Copper)基板等が好適に使用できる。尚、他方の面に放熱等の目的で銅板を接合することもできる。また、基板(K)の他方の面には放熱等を目的として金属板を接合することができる。セラミックスとしては、例えばAl2O3、AlN、Si3N4、ガラスのいずれかの粉末原料、2種以上の粉末原料、またはこれらを主成分とする粉末原料に必要に応じてバインダー成分などを配合し、シート状に成形した後、焼成することにより作製されたものを使用することができる。
半導体素子(S)は、半導体による電子部品、または電子部品の機能中心部の素子である。半導体ウエハはまずチップ単位に切断(ダイシング)して素子化される。その後、外部接続用電極を有する基板(K)とを貼り合わせる。尚、半導体素子(S)には通常電極等との接合面に合金等の金属層が設けられている。
(1−3)金属箔
金属回路層および金属層の厚さは、30〜500μmであることが好ましい。製造上シワなどなくセラミックス上に形成し、さらに使用時にセラミックスにかかる熱応力を低減させる観点から100〜300μmであることが特に好ましい。
材料としてはCuの他に、Al、Ag、Auなど導電性に優れた金属元素群から選ばれる1種の金属、2種以上の合金、または、1種以上を主成分とする合金を採用することができるが、特に、Cuは電気抵抗が低く種々厚みのものの入手が容易で一般的である。また、Alは電気抵抗が低くAlワイヤーボンディングが容易であることが至便である。
多孔質金属層(A)は、空孔率が2〜38体積%であり、略楕円体形状の空孔(h)を有し、多孔質金属層(A)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、かつ、断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmである。
本発明の接続構造体における、対向する被接続体(B)と被接続体(C)を、前記特定の範囲にある、空孔率、空孔(h)の平均円形度、楕円形状の長軸の傾き角度の平均値、及び楕円形状の平均長軸長さの多孔質金属層(A)で接合することにより、被接続体(B)と多孔質金属層(A)間の接合界面端部、及び多孔質金属層(A)と被接合体(C)の接合界面端部に発生する応力が緩和されて、接合寿命を向上することができ、また、放熱性と導電性を維持し接合信頼性を向上することができる。
図1に多孔質金属層(A)における、金属部分21、空孔(h)22、多孔質金属層(A)の厚み方向23、楕円形状の長軸の傾き角度の平均値24、楕円形状の平均長軸長さ25をそれぞれ示す。また、ここでいう略楕円体形状とは断面形状が楕円形状とみなせるものであり、例えば、筒状、葉形、繊維状または楕円体形状が織り合わされた形状を含むものである。尚、該多孔質金属層(A)に形成される空孔(h)は、走査型電子顕微鏡(SEM)の観察から、略楕円形状(又は楕円形状)であることが確認されている。
多孔質金属層(A)における、空孔率は2〜38体積%である。本発明において、多孔質金属層(A)の空孔率の測定は、該多孔質金属層(A)の厚さ方向の断面(V)を走査型電子顕微鏡(SEM(scanning electron microscope))を用いて画像を作成し、その画像を画像処理ソフト(例えば、画像処理ソフト「pickmap」)を用いて2値化処理することで行うことができる。2値化処理は、多孔質金属層(A)に含まれている金属微粒子(M)に由来する金属部分を白色、空孔を黒色に画像処理する。この際、256階調のグレースケールの画像を画像処理ソフトで閾値を80に設定することで測定者によるバラツキがないようにする。画像の白色と黒色面積の比率から断面の空孔率を算出する。また、体積あたりの空孔率(体積%)の算出は、幾何学的確率論(定量形態学)を基礎とするステオロジー(Stereology)法より行う。以後、表記の空孔率は、体積あたりの空孔率を表す。
尚、上記多孔質金属層(A)の空孔率は、単位体積当たりの金属層における「金属以外から形成されている体積割合」をいい、金属以外の耐熱性樹脂(R)、焼成後に残存する有機分散媒(D)等が占める体積は「金属以外から形成されている体積割合」中に含まれる。多孔質金属層(A)の上記断面(V)は、包埋樹脂で埋込、断面を切断と研磨により形成することができる。
多孔質金属層(A)の厚さ方向に断面(V)における空孔(h)の楕円形状の平均円形度は0.80〜0.90である。上記平均円形度Eは、下記式で定義される。
円形度E=4×円周率×[粒子投影面積]÷[粒子投影像の周囲長]2
この平均円形度は、空孔率の算出と同様に作成した切断面のSEM画像を、空孔率の算出と同様に二値化処理し、さらに画像処理により求められる。画像処理は、例えば、米国国立衛生研究所(National Institutes of Health:NIH)のImageJなどの画像解析ソフトウェアなどを用いて計算できる。前記均円形度が0.80以上では、空孔の端部での応力集中が小さくなり、亀裂が伸展しにくくなり、信頼性が向上する。一方、平均円形度が0.9以上の円形度の空孔は実質的に作製することが困難なことから、平均円形度は0.9以下となる。
多孔質金属層(A)の厚さ方向の断面(V)における厚さ方向の垂線に対して、空孔(h)の楕円形状の長軸の傾き角度の平均値は、57度以下である。前記楕円形状の長軸の傾き角度とは、図1に示す通り、多孔質金属層(A)の厚さ方向の断面(V)における厚さ方向の垂線に対する空孔(h)の楕円形状の長軸の傾き角度である。
この楕円形状の長軸の傾き角度の平均値は、空孔率の算出と同様に作成した切断面のSEM画像を空孔率の算出と同様に二値化処理し、画像処理により求められる。画像処理は、例えば、米国国立衛生研究所(National Institutes of Health:NIH)のImageJなどの画像解析ソフトウェアなどを用いて計算できる。
この状況で焼結体に楕円体形状の空孔が存在し、面内方向に応力が発生している場合を考えると、楕円形状の長軸の傾きにより応力集中の状態が異なり、90度では楕円の曲率半径の小さい部分に応力集中するのに対して、0度では応力集中がしない。また、円形度が1に近いほうが真円に近いため、応力集中が小さくなることもわかる。楕円形状の長軸の傾き角度の平均値が57度以下で、空孔(h)の端部の応力集中が低減され、亀裂伸展が抑制されて信頼性が向上する。かかる観点から、楕円形状の長軸の傾き角度の平均値は50〜57度が好ましい。
前記断面(V)における空孔(h)の該楕円形状の平均長軸長さは30〜500nmである。図1に示す通り、前記楕円形状の平均長軸長さ25は、多孔質金属層(A)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均長軸長さである。この楕円形状の平均長軸長さは、空孔率を算出するのと同様に作成した切断面のSEM画像を、空孔率の算出と同様に二値化処理し、画像処理により求められる。画像処理は、例えば、米国国立衛生研究所(National Institutes of Health:NIH)の「ImageJ」などの画像解析ソフトウェアなどを用いて計算される。
空孔(h)の楕円形状の平均長軸長さは30nm以上である。該平均長軸長さが30nm未満であると焼結体がバルク体に近づき、応力緩和性が乏しくなり、信頼性が低下する為に、30nm以上であることが望ましい。一方、空孔(h)の楕円形状の平均長軸長さが500nmを超えると、空孔の部分に応力が集中して、信頼性が低下するため、500nm以下とする必要がある。
多孔質金属層(A)における、空孔率が2〜38体積%であり、多孔質金属層(A)は略楕円体形状の空孔(h)を有し、多孔質金属層(A)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、かつ、断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmである。
本発明における多孔質金属層(A)は、後述する金属微粒子(P)と、分子中に2以上の水酸基を有する1種または2種以上の多価アルコールを含む有機分散媒(D)とを含有してなる加熱接合材料(M)を被接続体(B)、(C)間に配置して、加圧下の加熱・焼結により形成される。以下に加熱接合材料(M)について説明する。
加熱接合材料(M)は、有機分散媒(D)中に金属微粒子(P)が分散している金属微粒子分散材料である。
(A)金属微粒子(P)
金属微粒子(P)は、焼結性を有する、平均一次粒子径1〜500nmの金属微粒子(P1)のみでも可能であるが、更に該金属微粒子(P1)と、平均一次粒子径0.5〜50μmの金属微粒子(P2)とを併用することが好ましい。金属微粒子の金属種としては、特に制限はないが金、銀、銅、アルミニウム、ニッケル、錫、インジウム、チタン、白金、パラジウム、及びシリコンから選択される1種もしくは2種以上を使用することが好ましい。
加熱接合材料(M)に使用する金属微粒子(P)は、はんだペーストの場合と異なり、少なくとも1種以上の高純度銅微粒子をそのまま使用することができるので、接合強度と導電性に優れる接合体を得ることが可能になる。一般にはんだペーストの場合、実装対象である基板の銅パッド部分の酸化を取り除くためにフラックス(有機成分)を含有しており、更に金属材料に含まれる不純物として少量ではあるがAl、Zn、Cd、As等の金属が含まれることが多い。
金属微粒子(P1)は、一次粒子の平均粒子径が1〜500nmの金属微粒子であれば特に制限されるものではない。金属微粒子(P1)の一次粒子の平均粒子径が1nm未満のものは製造上の困難性を伴い、一方、一次粒子の平均粒子径が500nm以下で精密な導電パターンを形成することができ、焼成も容易になる。1次粒子の平均粒子径は粒子を電子顕微鏡で1粒径を十分観察できる倍率(20万倍)で観察し、任意に20個粒子を抽出しその直径を測長しその平均とした。ここで、一次粒子の粒子径とは、二次粒子を構成する個々の金属微粒子の一次粒子の直径の意味である。
加熱接合材料(M)に、一次粒子の平均粒子径が1〜500nmの金属微粒子(P1)に加えて、一次粒子の平均粒子径0.5〜50μmの金属微粒子(P2)を分散させて使用することが好ましい。使用する金属微粒子としては、金属微粒子(P1)と同種のものが好ましい。金属微粒子(P)として、平均一次粒子径が1〜500nmの金属微粒子(P1)に、更に平均一次粒子径が0.5〜50μmの金属微粒子(P2)を使用すると、金属微粒子(P2)間に金属微粒子(P1)が分散して、加熱処理する際に金属微粒子(P1)の自由な移動を効果的に抑制することができ、金属微粒子(P1)の分散性と安定を向上する。その結果、加熱焼成でより均質な粒子径と空孔(h)を有する多孔質体を形成することが可能になる。金属微粒子(P2)の平均一次粒子径は、0.5〜50μmが好ましい。金属微粒子(P2)の平均一次粒子径が0.5μm未満では金属微粒子(P2)の添加効果が発現せず、50μmを超えると焼成が困難になるおそれがある。金属微粒子(P2)の測定方法はレーザー回折法などを用いることにより測定することが出来る。また、平均粒子径はメディアン径(粉体をある粒子径から2つに分けたとき、大きい側と小さい側が等量となる径)とした。
金属微粒子(P1)は金属微粒子(P2)同士を繋ぐ役割をしていることから、金属微粒子(P1)が少ないと多孔質金属層全体の強度が低下し、チップ電極の接点が減少するため、その部分に応力が集中して、信頼性が低下する。金属微粒子(P2)が80%を超えると多孔質金属層内部を密に充填することが困難となり、空孔率が38%を超えるおそれがあり、また大きな空孔の発生確率も上昇するおそれがある。そのために信頼性が低下するので、金属微粒子(P2)は80%以下が望ましい。
有機分散媒(D)には、分子中に2以上の水酸基を有する1種または2種以上の多価アルコール(A1)が含有されるが、他の有機溶媒として、アミド基を有する化合物(A2)、アミン化合物(A3)、低沸点有機溶媒(A4)等を含有させることができる。
多価アルコール(A1)としては、分子中に2以上の水酸基を有する、エチレングリコ−ル、ジエチレングリコ−ル、1,2−プロパンジオ−ル、1,3−プロパンジオ−ル、1,2−ブタンジオ−ル、1,3−ブタンジオ−ル、1,4−ブタンジオ−ル、2−ブテン−1,4−ジオール、2,3−ブタンジオ−ル、ペンタンジオ−ル、ヘキサンジオ−ル、オクタンジオ−ル、グリセロール、1,1,1−トリスヒドロキシメチルエタン、2−エチル−2−ヒドロキシメチル−1,3−プロパンジオール、1,2,6−ヘキサントリオール、1,2,3−ヘキサントリオール、1,2,4−ブタントリオール、トレイトール、エリトリト−ル、ペンタエリスリト−ル、ペンチト−ル、1−プロパノール、2−プロパノール、2−ブタノール、2−メチル2−プロパノール、キシリトール、リビトール、アラビトール、ヘキシト−ル、マンニトール、ソルビトール、ズルシトール、グリセリンアルデヒド、ジオキシアセトン、トレオース、エリトルロース、エリトロース、アラビノース、リボース、リブロース、キシロース、キシルロース、リキソース、グルコ−ス、フルクト−ス、マンノース、イドース、ソルボース、グロース、タロース、タガトース、ガラクトース、アロース、アルトロース、ラクト−ス、イソマルト−ス、グルコヘプト−ス、ヘプト−ス、マルトトリオース、ラクツロース、及びトレハロースの中から選択される1種又は2種以上を挙げることができる。多価アルコール(A1)は還元性を有するので、加熱接合材料(M)を加熱、焼結する際に金属微粒子(P)表面が還元され、更に加熱処理を行うことで多価アルコール(A1)が連続的に蒸発して、その液体および蒸気が存在する雰囲気で還元・焼成されると金属微粒子(P)の焼結が促進される。尚、加熱接合材料(M)の焼結性を考慮すると、多価アルコール(A1)が有機分散媒(D)中に40質量%以上含有されていることが好ましい。
アミド基を有する化合物(A2)としては、N−メチルアセトアミド、N−メチルホルムアミド、N−メチルプロパンアミド、ホルムアミド、N,N−ジメチルアセトアミド、1,3−ジメチル−2−イミダゾリジノン、N,N−ジメチルホルムアミド、1−メチル−2−ピロリドン、ヘキサメチルホスホリックトリアミド、2−ピロリジノン、ε−カプロラクタム、及びアセトアミドの中から選択される1種又は2種以上を挙げることができる。アミド基を有する化合物(A2)は有機分散媒(D)中で10〜80質量%となるように配合することができる。
アミン化合物(A3)としては、脂肪族第一アミン、脂肪族第二アミン、脂肪族第三アミン、脂肪族不飽和アミン、脂環式アミン、芳香族アミン、及びアルカノールアミンの中から選択される1種又は2種以上のアミン化合物が挙げられる。その具体例としてはメチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、n−プロピルアミン、ジ−n−プロピルアミン、トリ−n−プロピルアミン、n−ブチルアミン、ジ−n−ブチルアミン、トリ−n−ブチルアミン、t−プロピルアミン、t−ブチルアミン、エチレンジアミン、プロピレンジアミン、テトラメチレンジアミン、テトラメチルプロピレンジアミン、ペンタメチルジエチレントリアミン、モノ−n−オクチルアミン、モノ−2エチルヘキシルアミン、ジ−n−オクチルアミン、ジ−2エチルヘキシルアミン、トリ−n−オクチルアミン、トリ−2エチルヘキシルアミン、トリイソブチルアミン、トリヘキシルアミン、トリイソオクチルアミン、トリイソノニルアミン、トリフェニルアミン、ジメチルココナットアミン、ジメチルオクチルアミン、ジメチルデシルアミン、ジメチルラウリルアミン、ジメチルミリスチルアミン、ジメチルパルミチルアミン、ジメチルステアリルアミン、ジメチルベヘニルアミン、ジラウリルモノメチルアミン、ジイソプロピルエチルアミン、メタノールアミン、ジメタノールアミン、トリメタノールアミン、エタノールアミン、ジエタノールアミン、トリエタノールアミン、プロパノールアミン、イソプロパノールアミン、ジイソプロパノールアミン、トリイソプロパノールアミン、ブタノールアミン、N−メチルエタノールアミン、N−メチルジエタノールアミン、N,N−ジメチルエタノールアミン、N−エチルエタノールアミン、N−エチルジエタノールアミン、N,N−ジエチルエタノールアミン、N−n−ブチルエタノールアミン、N−n−ブチルジエタノールアミン、及び2−(2−アミノエトキシ)エタノールの中から選択される1種又は2種以上を挙げることができる。アミン化合物(A3)は有機分散媒(D)中で0.3〜30質量%となるように配合することができる。
有機溶媒(A4)は、常圧における沸点が60〜120℃(以下、沸点は常圧における沸点をいう。)で、比較的沸点の低い有機溶媒である。有機溶媒(A4)としては、分子中に1つのヒドロキシル基を有するアルコール、エーテル、及びケトンから選択される1種又は2種以上が好ましい。前記分子中に1つのヒドロキシル基を有するアルコールとしては、メタノール(64.7℃)、エタノール(78.0℃)、1−プロパノール(97.15℃)、2−プロパノール(82.4℃)、2−ブタノール(100℃)、2−メチル2−プロパノール(83℃)の中から選択される1種又は2種以上を例示することができる。前記エーテルとしては、ジエチルエーテル(35℃)、メチルプロピルエーテル(31℃)、ジプロピルエーテル(89℃)、ジイソプロピルエーテル(68℃)、メチル−t−ブチルエーテル(55.3℃)、t−アミルメチルエーテル(85℃)、ジビニルエーテル(28.5℃)、エチルビニルエーテル(36℃)、アリルエーテル(94℃)の中から選択される1種又は2種以上を例示することができる。また、前記ケトンとしては、アセトン(56.5℃)、メチルエチルケトン(79.5℃)、ジエチルケトン(100℃)の中から選択される1種又は2種以上を例示することができる。上記かっこ内の温度は沸点である。
有機分散媒(D)中に低沸点有機溶媒である有機溶媒(A4)が含まれることで、有機分散媒(D)の粘度を調整してパターン形成の精度を向上することができる。有機分散媒(D)中の有機溶媒(A4)の含有割合は1〜30質量%程度配合することができる。
本発明の加熱接合材料(M)は、金属微粒子(P)が有機分散媒(D)中に分散している、接合材料である。加熱接合材料(M)中の金属微粒子(P)の割合は、塗工性やシート成形性を考慮すると、40〜90質量%がより好ましい。このような配合割合で加熱接合材料(M)を製造すると加熱接合材料(M)の粘度は10Pa・s〜100Pa・sとなり、接合性の良好な接合材料となる。なお、加熱接合材料(M)の粘度はBROOKFIELD社のDV-III Ultraを用いてスピンドル回転数を10回転で行うことができる。本発明の加熱接合材料(M)は、金属微粒子(P)が有機分散媒(D)中に分散している、常温でシート形状の接合材料、又は加熱接合ペースト状物とすることができる。加熱接合材料(M)は、公知の混合機、捏和機等を使用して、金属微粒子(P)を有機分散媒(D)に分散させることにより得ることができる。加熱接合材料(M)は、はんだペーストに含まれるような不純物を含まない、高純度の金属微粒子(P)を使用することが可能であるので、接合強度と導電率を向上することが可能になる。
本発明の接続構造体は、被接続体(B)上(例えば、セラミック板表面)に、加熱接合材料(M)からなるパターン化物を配置し、更に該パターン化物上に被接続体(C)を配置して、金属微粒子(P)が焼結する温度の範囲で加熱して形成される。該加熱の際に、多価アルコール(A1)が金属微粒子(P)表面を還元して活性化し、金属微粒子(P)同士の焼結を促進する。
その結果、ナノサイズの金属微粒子を含むペーストを用いた場合と同様に、電極と基板を電気的、機械的に接合することが可能になる。尚、加熱接合材料(M)を加熱焼結する際に有機分散媒(D)は分解、蒸発等により除去される。
加圧の圧力が5MPa未満になると、空孔が十分につぶされず大きい空孔が存在してしまう。また、理由は十分に解明されていないが、加圧することにより空孔はつぶされて、表面エネルギーが最小になるように真円に近づくと考えられる。そのため、加圧力が低いと円形度が0.8以下の粒子が多くなってしまう。また、加圧時にはペーストが横方向に流動するために楕円の長軸の傾き角度が小さくなる。そのため、加圧力が低いと前記断面(V)における空孔(h)の楕円形状の長軸の平均傾き角度の大きい空孔(h)が多くなること等から、加圧は5〜20MPaが好ましい。
これにより被接続体(B)、加熱接合材料(M)、被接続体(C)がそれぞれ相互に接触された状態で、加熱・焼結を行うことにより、加熱接合材料(M)中の金属微粒子(P)が焼結されて、多孔質である多孔質金属層(A)が形成されるにより、多孔質金属層(A)を介して被接続体(B)と被接続体(C)が接合される。加熱焼結温度190〜350℃程度に達したら、5〜120分間程度保持することが好ましい。
図2(a)に示す、レイアップ用のプレス板42を用意して、ワーク41をそのプレス板42上にレイアップし、真空プレス機43の下熱盤44上にセットする。その後、図2(b)に示すように、チャンバー45を閉じてチャンバー45内を真空状態にする。そして、図2(c)に示すように、加圧シリンダー46により圧力を加えた状態で、ワーク41を上熱盤47と下熱盤44とで挟持して、加熱する。これにより、加熱接合材料(M)が焼結されて、多孔質金属層が形成され、被接続体(B)上に多孔質金属層(A)を介して被接続体(C)が接合されている接続構造体を製造することができる。
このような耐熱性樹脂(R)を形成する成分として、プレポリマー溶液、樹脂溶液等が挙げられる。プレポリマー溶液の成分としては、1分子中に2個以上のエポキシ基を有するエポキシ樹脂系、ポリイミドプレポリマー溶液等が挙げられる。また、樹脂溶液としては、シリコン樹脂、アミドイミド樹脂、マレイミド樹脂、ポリビニルピロリドン等の樹脂が挙げられる。上記耐熱性樹脂(R)は、荷重たわみ温度が150℃以上で、かつガラス転移温度(Tg)が100℃以上であることが好ましい。
本発明の第2の実施形態の「半導体装置」は、第1の実施形態の「接続構造体」を利用した発明である。以下に、第2の実施形態の半導体装置、及びその製造方法について説明する。
〔2−1〕半導体装置
第2の実施形態である半導体装置は、少なくとも、セラミック基板と、その上に形成された金属回路からなる配線基板(i)、多孔質金属層(ii)、導体層(iii)、ダイボンド接合層(iv)、半導体素子(v)がこの順に積層された構造を有する半導体装置であって、多孔質金属層(ii)における、空孔率が2〜38体積%であり、多孔質金属層(ii)は略楕円体形状の空孔(h)を有し、多孔質金属層(ii)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、かつ、前記断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmであることを特徴とする。
本実施形態に係る半導体装置1は、図9に示すように、セラミックス基板2とセラミックス基板2の一方の面上に形成された、金属回路層3(第1の実施形態の被接続体(B)に対応する。)とセラミックス基板2の他方の面上に形成された熱拡散用及び反り防止用の金属層4とを備える配線基板(i)5を有している。配線基板(i)5の金属回路層3の上面には、金属粒子の焼結体からなる多孔質金属層(ii)8(第1の実施形態の多孔質金属層(A)に相当する。)が設けられており、多孔質金属層(ii)8上には導体層(iii)7(第1の実施形態の被接続体(C)に対応する。)が設けられている。金属回路層3と導体層(iii)7の互いに対向する面の面積は、導体層(iii)7の方が金属回路層3よりも小さくなっている。そして、導体層(iii)7には、ダイボンド接合層(iv)6を介して半導体素子(v)9が接合されている。また、半導体素子(v)9の上面(ダイボンド接合層(iv)6に接合されていない側の面)に形成された端子(図示しない)と配線基板5の配線3aとがワイヤー10により接続されている。
(1)配線基板(i)
第2の実施形態における配線基板(i)5は、金属回路層3として銅回路板が、金属層4として銅板がそれぞれセラミックス基板2上に共晶反応によって接合されたDBC基板を用いることができる。セラミックス基板2としては、例えばAl2O3、AlN、Si3N4、ガラスのいずれかの粉末原料、2種以上の粉末原料、またはこれらを主成分とする粉末原料に必要に応じてバインダー成分などを配合し、シート状に成形した後、焼成することにより作製されたものを使用することができる。特に、高強度が期待できることからSi3N4を使用することが好ましい。また、セラミックスからなる基板は適宜、表面を砥粒で研磨する等して、平滑化してもよい。
多孔質金属層(ii)は、前記の通り、略楕円体形状の空孔(h)を有していて、空孔率が2〜38体積%であり、多孔質金属層(ii)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、かつ、断面(V)における空孔(h)の該楕円形状の平均長軸長さが30〜500nmである。
多孔質金属層(ii)における、上記空孔(h)の楕円形状の平均円形度、空孔(h)の楕円形状の長軸の傾き角度の平均値、及び空孔(h)の楕円形状の平均長軸長さは、第1の実施形態の「多孔質金属層(A)」についての記載と同様である。また、ここでいう略楕円体形状とは断面形状が楕円形状とみなせるものであり、例えば、筒状、葉形、繊維状または楕円体形状が織り合わされた形状を含むものである。
500μm超であると供給厚さバラつきも大きくなり接続ムラが生じる。また、確実に接続させる観点から10〜300μmであることが特に好ましい。多孔質金属層(ii)8を設けることにより、多孔質金属層(ii)8を構成する金属材料が熱により膨張しようとしたときや、セラミックス基板2と金属回路層3および導体層(iii)7との線膨張率差に起因する応力が生じたときに、その応力を吸収することができるため、金属回路層3の端部にかかる応力が緩和される。また多孔質金属層(ii)8による金属回路層3と導体層(iii)の接合のため熱抵抗が低くなり、放熱性がよい。
導体層(iii)7は、Cu、Al、Ag、Auからなる金属元素群から選ばれる1種の金属、2種以上の合金、または、1種以上を主成分とする合金からなることが好ましく、特に金属回路層(ii)8と同じ材料からなることが、放熱性や線膨張の差から焼結体層に発生する熱応力の観点から、好ましい。
ダイボンド接合層(iv)6としては、前述の多孔質金属層(ii)8と同様の金属粒子の焼結体であって焼結後の融点が250℃以上のものを用いることができる。特に、導体層(iii)7との接合性という理由から銅微粒子の焼結体が好ましい。金属微粒子の焼結体を介して、導体層(iii)7と半導体素子(v)9とを接続することにより、導体層(iii)7を構成する金属が熱により膨張しても、空孔に吸収されるため、見かけ上の弾性率が低下する。また、半導体素子(v)9と配線基板(i)5と導体層(iii)7の線膨張率差に起因する応力が生じても、空孔に吸収されるため、応力が緩和される。従って、半導体素子(v)9と導体層(iii)7との間で生じる剥離やクラックを低減することができる。なお、ダイボンド接合層(iv)6は、金属粒子の焼結体に限定されるものではなく、融点が250℃以上のろう材(はんだ)を使用してもよい。
半導体素子(v)9は、Si、SiC、GaN、GaAsなどが採用でき、特に、耐熱性に優れるSiCが好適である。
第2の実施形態に係る半導体装置1の製造方法について説明する。
図10(A)に示すように、セラミックス基板2の上面に金属回路層3、下面に金属層4が接合された配線基板(i)5を準備する。次に、図10(B)に示すように、金属回路層3上の半導体素子(v)9を実装する位置に対応する位置に、導体層(iii)7の大きさに対応する大きさの開口を有するマスク11を配置し、スキージ12を用いて、金属微粒子(P)を有機分散媒(D)に分散させた加熱接合材料(M)であるペースト13を印刷する。マスク11としては、ステンレス等のメタルマスクを使用することができる。スキージ12は、金属製であることが好ましく、ゴム製であれば、なるべく硬度が高い方が、印圧によるマスク11の開口部での変形を抑えられるため、供給量をコントロールしやすい。印刷後、大気雰囲気で乾燥させる。
第1の実施形態に係る、実施例1〜9、及び比較例1〜5では、セラミックス回路基板と半導体素子間の接合を加熱接合材料を用いて、焼結により接合した場合を示し、その評価方法としては半導体素子加熱による熱ストレス試験にて評価した。
また、第2の実施形態に係る、実施例10〜14、及び比較例6、7では、セラミック回路基板を作製する際に既に金属回路が形成されているセラミック回路基板に更に加熱接合体を用いて金属箔をセラミックス回路基板の全部または一部に接合する場合を示し、その評価方法としては、冷熱衝撃試験と放熱性を採用した。
以下に、第1の実施形態に係る、実施例1〜9、及び比較例1〜5で使用した材料、及び評価方法、実施例、及びその評価結果について記載する。
(1)使用した材料
(1−1)加熱接合材料の調製
下記の銅微粒子(P1)と、銅微粒子(P2)を表1、2に示す質量割合で配合した。有機分散媒としてグリセリンとノルマルメチルアセトアミドを使用して、加熱接合材料全体に占める金属微粒子(P)の割合が40質量%になるように配合した。具体的にはグリセリン108gとノルマルメチルアセトアミド12gからなる有機分散媒120gに、平均一次粒子50nmの銅微粒子(P1)と平均一次粒子径4.3μmの銅微粒子(P2)を合計が80gとなるように表1に記載の割合で配合する。材料を乳鉢によって十分混合することで加熱接合材料を得た。得られた加熱接合材料を厚さ100μmのメタルマスクとスキージを用いて接合する電子部品より大きいサイズに印刷した。その後溶媒を蒸発させ、金属濃度を調節するために110℃、大気雰囲気のオーブンで乾燥を行った。
(i)基板
基板は、厚み320μmの窒化ケイ素基板の表面に厚み320μm、その反対の面に厚み200μmの銅箔を張った基板(京セラ(株)製、型番:KO-PER110681)を用いた。
(ii)半導体素子
半導体素子は、サイズが7.2×7.2×0.4(厚)mmのシリコンチップである。シリコン基板はn型を用いて、シリコンチップの片面にスパッタ法によりTi/Al電極、反対側の面にスパッタ法により厚みがTi/Ni/Au=100/450/200nmの層を形成した物を用いた。
上記「半導体装置の製造方法」
開口部8mm角で厚さ100μmのメタルマスクを用意する。このメタルマスクを用いて基板にスキージを用いて印刷する。その後溶媒を蒸発させるために110℃で大気雰囲気のオーブンで30分乾燥させた。接合は、前述の「半導体装置の製造方法」の項で示されている方法で行った。接合条件は、減圧雰囲気下、温度300℃、時間は20分とした(加圧は、表1、2に示す通りである)。また、図11に示す副資材15として、テフロンを使用した。
(2−1)信頼性の評価
作製したシリコンチップ実装サンプルに太さ0.3mmのワイヤーを10本実装した。その後、該シリコンチップ実装サンプルを、厚さ3mm、大きさ40×50mmの銅板に鉛90質量%錫10質量%のはんだを用いて接合することにより固定した。このサンプルに通電することによりチップ部分のみを1秒で220℃まで温度が上がるように印可電圧を設定し加熱し、9秒冷却することにより接合体に熱ストレスを与えた。この試験を設定した印可電圧を一定にして繰り返した。熱ストレスを与えると接合部にクラック等が入り、熱抵抗が上昇する。この熱抵抗の上昇率が20%を故障とし、故障までの「使用可能回数」を測定した。
多孔質金属層の断面観察は試料を包埋樹脂で埋込、断面を切断と研磨により形成する。その後クロスセクションポリッシャ(日本電子(株)製、SM-09010)により、Arビームを用いて断面を成形した。Arビームの加速電圧は4.6kV 真空度は1×10−3Pa以下で行った。その後SEM(日立ハイテクノロジー社製、SEMEDX TypeN)により断面を観察した。加速電圧は20kVで2次電子像を観察した。得られたSEM画像(5000倍)から、加速電圧の情報など解析上障害のなる部分が入らないように25.6μm×11.1μm角の解析する画像を切り出す。手順は画像処理ソフト「ImageJ」(米国国立衛生研究所(National Institutes of Health:NIH))を使用し、画像を読み込んだ後必要な領域を選択し、「Image」→「Crop」の手順で切り出し、画像を保存した。
サンプルにせん断力を与えて、ダイシェア強度の評価を行った。
半導体素子の側面に多孔質銅層を含む異物を除くために、実装した半導体素子の外周にある多孔質銅層を削り取り、シェア強度を評価するサンプルを得た。半導体素子の側面に多孔質銅層を含む異物が含まれるとシェアツールが半導体素子の側面に対し、横から水平にあたらず接続強度に影響を与え、測定ばらつきを発生するおそれがある。シェア試験(デイジ社製、装置名:万能型ボンドテスター シリーズ4000)を用いて評価を行った。シェアツールは、サンプル設置面から多孔質銅層と緻密金属層との界面より50μm高くし、シェアツールの送り速度は50μm/secと、半導体素子を横から水平に押し、せん断力を与えた。評価基準は、シェア強度の測定値が半導体素子の外径面積に対し50MPa未満のものを不良とした。
以下に、実施例1〜9、及び比較例1〜5を記載する。
図2に示す、焼結装置を使用して、前記基板とシリコンチップ間に加熱接合材料を配置して、加圧下に焼結を行った。
厚さ0.1mm、開口部が8mm角のメタルマスクとスキージを用いて、基板上に加熱接合材料を印刷した。印刷の条件はスキージ圧1MPa、スキージ角度5度、スキージ速度5mm/秒、オンコンタクトで行った。次ぎに、オーブンを用いて、該印刷された加熱接合材料を温度110℃、窒素雰囲気下で予備乾燥した。その後、該印刷部分にシリコンチップを載せ、上記焼結装置を用いて、加熱・焼結により接合を行った。表1に示す通り、10〜20MPaの加圧下、焼結温度300℃、焼結時間20分間で焼結した。その後、焼結したサンプルについて、前記評価法で評価を行った。
焼結時に加圧するのと同時にペーストが適度な流動性を持つことにより、ペーストが横方向(基板とチップの間の面内方向)に流れて、楕円体形状が形成されると考えられる。ペーストに流動性を持たせる方法として、本実施例、比較例では有機分散媒として、NMA(ノルマルメチルアセトアミド)をグリセリン9に対して1の質量割合で添加することにより調製した。
焼結時の加圧のみを、表2に示す通り、2〜20MPaに変更して焼結した以外は、上記実施例1〜9に記載したと同様に加熱・焼結により接合を行って接続構造体を得た。
比較例1〜5の評価結果をまとめて、表2、及び図3〜8に示す。
表1〜2から、図3〜5に、横軸を焼結時の加圧、縦軸をそれぞれ「楕円形状長軸の傾き角度」、「平均円形度」、及び「楕円形状長軸の平均長さ」としてプロットした。図3から焼結時の加圧が高くなるほど、「楕円形状長軸の傾き角度」は小さくなることが確認された。図4から焼結時の加圧が高くなるほど、平均円形度が高くなることが確認された。図5から焼結時の加圧が高くなるほど、「楕円形状長軸の平均長さ」は短くなることが確認された。図3〜5から、焼結時の加圧の調整により、「楕円形状長軸の傾き角度」、「平均円形度」、及び「楕円形状長軸の平均長さ」をある程度制御可能なことが確認された。
以下に、第2の実施形態に係る、実施例10〜14、及び比較例6、7で使用した材料、及び評価方法、実施例、及びその評価結果について記載する。
(1)使用した材料
(1−1)加熱接合材料の調製
前記実施例8で使用した加熱接合材料と同様のものを使用した。
(1−2)基板と電子部品
使用した、基板1、2、及び電子部品1〜5を以下に記載する。尚、実施例10〜14、及び比較例6、7においてそれぞれ使用した下記基板、電子部品を表3に示す。
本発明の被接続体(B)に対応する基板として、下記の基板1、基板2を使用した。
基板1:配線基板として、30mm角のセラミックス基板上の外縁から1mm内側に28mm角の銅回路板および銅板が接合されたDBC基板(日鉄住金エレクトロデバイス(株)製、Cu(0.3mmt)/Al2O3(0.635mmt)/Cu(0.3mmt))を使用した。
基板2:配線基板として、30mm角のセラミックス基板上の外縁から1mm内側に28mm角の銅回路板および銅板が接合されたDBC基板(東芝マテリアル製、Cu(0.3mmt)/Si3N4(0.32mmt)/Cu(0.3mmt))を使用した。
本発明の被接続体(C)(導体層)に対応する電子部品として、下記の電子部品1〜4を使用した。
電子部品1:20mm角、厚さ0.3mmの銅箔
電子部品2:28mm角、厚さ0.3mmの銅箔
電子部品3:25mm角、厚さ0.3mmの銅箔
電子部品4:15mm角、厚さ0.3mmの銅箔
[実施例10〜14]
表3示す基板、電子部品を用意する。
電子部品1〜5と同じ大きさの開口部の100μm厚のメタルマスクを用意する。このメタルマスクを用いて基板1、2に搭載する電子部品に応じたメタルマスクとスキージを用いて印刷する。その後、ペースト中の有機分散媒を蒸発させるために110℃で大気雰囲気のオーブンで30分乾燥させた。接合は実施例8に記載したと同様の方法で行う。接合条件は温度300℃、圧力10MPa、時間は20分とした。雰囲気は減圧雰囲気下で行った。また副資材15はテフロンを使用した。焼結体断面の形状を観察するために実施例10で作成した物と同じものを観察用として作成した。試料の加工方法、観察方法は実施例8に記載の方法で行った。
観察の結果、空孔率は3.3%、楕円形状長軸の平均長さ182nm、平均円形度0.84、楕円形状長軸の傾き角度52.3(度)であった。この値は、実施例8に同じである。
比較例6で使用する部材を用意する。表3で示す基板と電子部品を準備し、銅回路板上にAg71.0質量%、Cu16.5質量%、Ti2.5質量%からなるろう材を30μm厚で塗布し、電子部品を搭載し、真空炉内で加熱接合した。その後の半導体素子の載置とワイヤーボンディングによる接続は実施例1と同様にして行った。
比較例7では被接続体(C)(導体層)による接合は行わないで、後述するはんだにより接合した。
(3−1)クラック、各層間の剥離の評価
実施例10〜14、及び比較例6、7における各々20個(n=20)の半導体パッケージについて、−40℃で30分保持した後、150℃まで昇温して30分保持するサイクルを繰り返すヒートサイクル試験を行った。その後、超音波探傷機にて基板へのクラックと各層間の剥離の有無を観察評価した。その結果を表4に示す。
超音波探傷機にて接合部である焼結体層の面積の10%に剥離もしくはクラックがみられた時のサイクル数(n)を確認し、2000回未満のサイクル数で剥離もしくはクラックがみられたサンプルの平均サイクル数を示す。括弧内の数は剥離もしくはクラックがみられたサンプル数を示す。また、2000回のサイクル数で剥離もしくはクラックがみられなかったものについては、「−」を記す。
実施例10〜14、比較例6においてはまず、評価のために、作製した電子部品の上部に発熱用の半導体チップを接合する。接合方法は、多孔質金属層と同様の、実施例8で使用した銅ナノペーストで、5mm角の開口を有するメタルマスクを用いて同じ条件で、電子部品の上部に印刷し、実施例8と同じ条件で乾燥させ、その上に半導体素子を搭載し、実施例8と同じ条件で加圧加熱して接合した。その後、半導体素子の上面に形成された端子と配線基板の配線とをワイヤーボンディングにより接続した。半導体素子としては、5mm×5mmの面積で0.23mmの厚さを有するものを用いた。
比較例7については必要なDBC基板を準備し、銅回路板上の半導体素子を実装する位置に対応する位置に、Sn−0.1Ag−0.7Cuはんだ層を形成し、はんだ層上に半導体素子を載置し、240℃の窒素雰囲気下で、0.5分、加熱して接合した。その後、半導体素子の上面に形成された端子と配線基板の配線とをワイヤーボンディングにより接続した。半導体素子としては、5mm×5mmの面積で0.23mmの厚さを有するものを用いた。
実施例8に記載したのと同様の方法で行った。
実施例10〜14、比較例6、7に係る各々20個の半導体パッケージについて、入熱が100Wとなるように半導体素子に電流を流し、半導体素子上面の上昇温度を測定した。
評価基準は下記の通りである。
◎:平均上昇温度が175℃以下の場合である。放熱効果に特に優れる。
○:平均上昇温度175℃超200℃以下の場合である。放熱効果に優れる。
×:平均上昇温度200℃超の場合である。放熱効果に劣る。
結果を表4に示す。
実施例10〜14は、金属回路層上に金属粒子の焼結体からなる焼結体層が形成され、焼結体層上には導体層が形成されているため、クラックや層間剥離が良好に抑制され、放熱効果も良好な結果となった。
しかしながら、金属回路層の面積や厚みを大きくした場合、製造段階において低温環境下におかれた後に高温環境下におかれるという温度サイクルが繰り返されると、セラミックス基板の線膨張率と金属回路層の線膨張率との差が大きいため、セラミックス基板が金属回路層の界面に沿って破壊する問題があった。
2 セラミックス基板
3 金属回路層(第1の実施形態の被接続体(B)に相当する)
4 金属層
5 配線基板(i)
6 ダイボンド接合層(iv)
7 導体層(iii)(第1の実施形態の被接続体(C)に相当する)
8 多孔質金属層(ii)(第1の実施形態の多孔質金属層(A)に相当する)
9 半導体素子(v)
21 金属部分
22 空孔(h)
23 多孔質金属層(A)の厚さ方向の垂線
24 多孔質金属層(A)の厚さ方向の垂線に対する空孔(h)の楕円形状の長軸の傾き角度
25 空孔(h)の楕円形状の長軸長さ
41 ワーク
42 プレス板
43 真空プレス機
44 下熱盤
45 チャンバー
46 加圧シリンダー
47 上熱盤
Claims (6)
- 被接続体(B)上に、接続体である多孔質金属層(A)を介して被接続体(C)が接合されている接続構造体であって、
多孔質金属層(A)における、空孔率が2〜38体積%であり、
多孔質金属層(A)は略楕円体形状の空孔(h)を有し、多孔質金属層(A)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、
断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、
かつ、断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmであることを特徴とする接続構造体。 - 前記断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が50〜57度であることを特徴とする、請求項1に記載の接続構造体。
- 前記多孔質金属層(A)を形成する金属が金、銀、銅、アルミニウム、クロム、ニッケル、チタン、コバルト、及びインジウムから選択された1種、又は2種以上であることを特徴とする、請求項1又は2に記載の接続構造体。
- 前記被接続体(B)及び被接続体(C)における、多孔質金属層(A)との接合表面部がそれぞれ金、銀、銅、クロム、ニッケル、及びチタンから選択される1種、もしくは2種以上の合金で形成されていることを特徴とする、請求項1から3のいずれかに記載の接続構造体。
- 前記多孔質金属層(A)に形成された空孔(h)の少なくとも一部に、耐熱性樹脂(R)が充填されていることを特徴とする、請求項1から4のいずれかに記載の接続構造体。
- 少なくとも、セラミック基板と、その上に形成された金属回路からなる配線基板(i)、
多孔質金属層(ii)、導体層(iii)、ダイボンド接合層(iv)、半導体素子(v)
がこの順に積層された構造を有する半導体装置であって、
多孔質金属層(ii)における、空孔率が2〜38体積%であり、
多孔質金属層(ii)は略楕円体形状の空孔(h)を有し、多孔質金属層(ii)の厚さ方向の断面(V)における空孔(h)の楕円形状の平均円形度が0.80〜0.90であり、
断面(V)における厚さ方向の垂線に対して空孔(h)の楕円形状の長軸の傾き角度の平均値が57度以下であり、
かつ、断面(V)における空孔(h)の楕円形状の平均長軸長さが30〜500nmであることを特徴とする、半導体装置。
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