JP6173086B2 - シリコン基板のエッチング方法 - Google Patents

シリコン基板のエッチング方法 Download PDF

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Publication number
JP6173086B2
JP6173086B2 JP2013150188A JP2013150188A JP6173086B2 JP 6173086 B2 JP6173086 B2 JP 6173086B2 JP 2013150188 A JP2013150188 A JP 2013150188A JP 2013150188 A JP2013150188 A JP 2013150188A JP 6173086 B2 JP6173086 B2 JP 6173086B2
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JP
Japan
Prior art keywords
etching
protective film
silicon substrate
rare gas
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2013150188A
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English (en)
Japanese (ja)
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JP2015023157A5 (https=
JP2015023157A (ja
Inventor
美尚 尾形
美尚 尾形
雅隆 加藤
雅隆 加藤
剛矢 宇山
剛矢 宇山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013150188A priority Critical patent/JP6173086B2/ja
Priority to US14/322,235 priority patent/US9548207B2/en
Publication of JP2015023157A publication Critical patent/JP2015023157A/ja
Publication of JP2015023157A5 publication Critical patent/JP2015023157A5/ja
Application granted granted Critical
Publication of JP6173086B2 publication Critical patent/JP6173086B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

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  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
JP2013150188A 2013-07-19 2013-07-19 シリコン基板のエッチング方法 Expired - Fee Related JP6173086B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013150188A JP6173086B2 (ja) 2013-07-19 2013-07-19 シリコン基板のエッチング方法
US14/322,235 US9548207B2 (en) 2013-07-19 2014-07-02 Method of etching a silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013150188A JP6173086B2 (ja) 2013-07-19 2013-07-19 シリコン基板のエッチング方法

Publications (3)

Publication Number Publication Date
JP2015023157A JP2015023157A (ja) 2015-02-02
JP2015023157A5 JP2015023157A5 (https=) 2016-09-01
JP6173086B2 true JP6173086B2 (ja) 2017-08-02

Family

ID=52343923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013150188A Expired - Fee Related JP6173086B2 (ja) 2013-07-19 2013-07-19 シリコン基板のエッチング方法

Country Status (2)

Country Link
US (1) US9548207B2 (https=)
JP (1) JP6173086B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6557588B2 (ja) * 2015-12-04 2019-08-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
US9741584B1 (en) * 2016-05-05 2017-08-22 Lam Research Corporation Densification of dielectric film using inductively coupled high density plasma
JP2019098558A (ja) * 2017-11-29 2019-06-24 キヤノン株式会社 インクジェットヘッド用基板の製造方法
CN114664706B (zh) * 2022-03-22 2026-01-20 盛吉盛半导体科技(北京)有限公司 一种硅反应装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US627756A (en) * 1899-04-22 1899-06-27 Henry J Mark Corrugated wood veneer.
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
JP4163857B2 (ja) * 1998-11-04 2008-10-08 サーフィス テクノロジー システムズ ピーエルシー 基板をエッチングするための方法と装置
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
JP3520831B2 (ja) * 2000-04-03 2004-04-19 株式会社日本自動車部品総合研究所 半導体力学量センサの製造方法
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US20040256353A1 (en) * 2003-04-24 2004-12-23 Tokyo Electron Limited Method and system for deep trench silicon etch
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
KR101083558B1 (ko) * 2003-12-01 2011-11-14 파나소닉 주식회사 플라즈마 에칭 방법
JP2007115839A (ja) * 2005-10-19 2007-05-10 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及びプラズマ処理装置
JP2007123412A (ja) * 2005-10-26 2007-05-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
EP2267764A4 (en) * 2008-03-07 2011-05-04 Ulvac Inc PLASMA PROCESSING
US20090242512A1 (en) * 2008-03-27 2009-10-01 Dalsa Semiconductor Inc. Deep reactive ion etching
US8802571B2 (en) * 2011-07-28 2014-08-12 Lam Research Corporation Method of hard mask CD control by Ar sputtering

Also Published As

Publication number Publication date
US9548207B2 (en) 2017-01-17
US20150024604A1 (en) 2015-01-22
JP2015023157A (ja) 2015-02-02

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