JP2015023157A5 - - Google Patents

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Publication number
JP2015023157A5
JP2015023157A5 JP2013150188A JP2013150188A JP2015023157A5 JP 2015023157 A5 JP2015023157 A5 JP 2015023157A5 JP 2013150188 A JP2013150188 A JP 2013150188A JP 2013150188 A JP2013150188 A JP 2013150188A JP 2015023157 A5 JP2015023157 A5 JP 2015023157A5
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JP
Japan
Prior art keywords
etching
silicon substrate
rare gas
protective film
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2013150188A
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English (en)
Japanese (ja)
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JP6173086B2 (ja
JP2015023157A (ja
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Priority to JP2013150188A priority Critical patent/JP6173086B2/ja
Priority claimed from JP2013150188A external-priority patent/JP6173086B2/ja
Priority to US14/322,235 priority patent/US9548207B2/en
Publication of JP2015023157A publication Critical patent/JP2015023157A/ja
Publication of JP2015023157A5 publication Critical patent/JP2015023157A5/ja
Application granted granted Critical
Publication of JP6173086B2 publication Critical patent/JP6173086B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013150188A 2013-07-19 2013-07-19 シリコン基板のエッチング方法 Expired - Fee Related JP6173086B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013150188A JP6173086B2 (ja) 2013-07-19 2013-07-19 シリコン基板のエッチング方法
US14/322,235 US9548207B2 (en) 2013-07-19 2014-07-02 Method of etching a silicon substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013150188A JP6173086B2 (ja) 2013-07-19 2013-07-19 シリコン基板のエッチング方法

Publications (3)

Publication Number Publication Date
JP2015023157A JP2015023157A (ja) 2015-02-02
JP2015023157A5 true JP2015023157A5 (https=) 2016-09-01
JP6173086B2 JP6173086B2 (ja) 2017-08-02

Family

ID=52343923

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013150188A Expired - Fee Related JP6173086B2 (ja) 2013-07-19 2013-07-19 シリコン基板のエッチング方法

Country Status (2)

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US (1) US9548207B2 (https=)
JP (1) JP6173086B2 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6557588B2 (ja) * 2015-12-04 2019-08-07 株式会社日立ハイテクノロジーズ ドライエッチング方法
US9741584B1 (en) * 2016-05-05 2017-08-22 Lam Research Corporation Densification of dielectric film using inductively coupled high density plasma
JP2019098558A (ja) * 2017-11-29 2019-06-24 キヤノン株式会社 インクジェットヘッド用基板の製造方法
CN114664706B (zh) * 2022-03-22 2026-01-20 盛吉盛半导体科技(北京)有限公司 一种硅反应装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US627756A (en) * 1899-04-22 1899-06-27 Henry J Mark Corrugated wood veneer.
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6187685B1 (en) * 1997-08-01 2001-02-13 Surface Technology Systems Limited Method and apparatus for etching a substrate
DE69942034D1 (de) * 1998-11-04 2010-04-01 Surface Technology Systems Plc Verfahren zur ätzung eines substrats
JP4221859B2 (ja) * 1999-02-12 2009-02-12 株式会社デンソー 半導体装置の製造方法
JP3520831B2 (ja) * 2000-04-03 2004-04-19 株式会社日本自動車部品総合研究所 半導体力学量センサの製造方法
US20040097077A1 (en) * 2002-11-15 2004-05-20 Applied Materials, Inc. Method and apparatus for etching a deep trench
US20070131652A1 (en) * 2003-01-12 2007-06-14 Mitsuhiro Okune Plasma etching method
US20040256353A1 (en) * 2003-04-24 2004-12-23 Tokyo Electron Limited Method and system for deep trench silicon etch
US20050112891A1 (en) * 2003-10-21 2005-05-26 David Johnson Notch-free etching of high aspect SOI structures using a time division multiplex process and RF bias modulation
JP2007115839A (ja) * 2005-10-19 2007-05-10 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及びプラズマ処理装置
JP2007123412A (ja) * 2005-10-26 2007-05-17 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP5367689B2 (ja) * 2008-03-07 2013-12-11 株式会社アルバック プラズマ処理方法
US20090242512A1 (en) * 2008-03-27 2009-10-01 Dalsa Semiconductor Inc. Deep reactive ion etching
US8802571B2 (en) * 2011-07-28 2014-08-12 Lam Research Corporation Method of hard mask CD control by Ar sputtering

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