JP6159867B1 - 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法 - Google Patents
透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法 Download PDFInfo
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- JP6159867B1 JP6159867B1 JP2016250119A JP2016250119A JP6159867B1 JP 6159867 B1 JP6159867 B1 JP 6159867B1 JP 2016250119 A JP2016250119 A JP 2016250119A JP 2016250119 A JP2016250119 A JP 2016250119A JP 6159867 B1 JP6159867 B1 JP 6159867B1
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- transparent conductive
- conductive film
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- crystal phase
- film forming
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 238000004544 sputter deposition Methods 0.000 claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 34
- 229910052718 tin Inorganic materials 0.000 claims abstract description 34
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 29
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 20
- 229910052738 indium Inorganic materials 0.000 claims abstract description 16
- 238000005259 measurement Methods 0.000 claims abstract description 16
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011701 zinc Substances 0.000 claims description 70
- 238000002425 crystallisation Methods 0.000 claims description 17
- 230000008025 crystallization Effects 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 238000010298 pulverizing process Methods 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910003437 indium oxide Inorganic materials 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 12
- 229910001887 tin oxide Inorganic materials 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 abstract description 35
- 239000010408 film Substances 0.000 description 111
- 239000000843 powder Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 15
- 239000002994 raw material Substances 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- 239000000203 mixture Substances 0.000 description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 12
- 238000005245 sintering Methods 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000000523 sample Substances 0.000 description 5
- 239000011230 binding agent Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000634 powder X-ray diffraction Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002472 indium compounds Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
- H01J37/3491—Manufacturing of targets
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016250119A JP6159867B1 (ja) | 2016-12-22 | 2016-12-22 | 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法 |
| TW106144010A TWI644867B (zh) | 2016-12-22 | 2017-12-14 | 透明導電膜形成用靶材及其製造方法、透明導電膜及其製造方法 |
| CN201711341245.0A CN108220893B (zh) | 2016-12-22 | 2017-12-14 | 透明导电膜形成用靶材及其制造方法、透明导电膜及其制造方法 |
| KR1020170177830A KR102089842B1 (ko) | 2016-12-22 | 2017-12-22 | 투명 도전막 형성용 타깃, 투명 도전막, 투명 도전막 형성용 타깃의 제조 방법 및 투명 도전막의 제조 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016250119A JP6159867B1 (ja) | 2016-12-22 | 2016-12-22 | 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP6159867B1 true JP6159867B1 (ja) | 2017-07-05 |
| JP2018104743A JP2018104743A (ja) | 2018-07-05 |
Family
ID=59272925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016250119A Active JP6159867B1 (ja) | 2016-12-22 | 2016-12-22 | 透明導電膜形成用ターゲット、透明導電膜形成用ターゲットの製造方法及び透明導電膜の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6159867B1 (zh) |
| KR (1) | KR102089842B1 (zh) |
| CN (1) | CN108220893B (zh) |
| TW (1) | TWI644867B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6637948B2 (ja) * | 2017-11-27 | 2020-01-29 | Ｊｘ金属株式会社 | Ｉｚｏターゲット及びその製造方法 |
| TWI818210B (zh) * | 2020-11-30 | 2023-10-11 | 光洋應用材料科技股份有限公司 | 氧化銦鋅錫濺鍍靶材及其導電膜 |
| TWI813161B (zh) * | 2022-01-28 | 2023-08-21 | 光洋應用材料科技股份有限公司 | 銦錫氧化物薄膜、其製法及包含其的光吸收元件 |
| WO2023189870A1 (ja) * | 2022-03-29 | 2023-10-05 | 出光興産株式会社 | スパッタリングターゲット、スパッタリングターゲットの製造方法、酸化物薄膜、薄膜トランジスタ、及び電子機器 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007063649A (ja) * | 2005-09-01 | 2007-03-15 | Idemitsu Kosan Co Ltd | スパッタリングターゲット及び透明導電膜 |
| JP3961172B2 (ja) * | 1999-11-26 | 2007-08-22 | アルプス電気株式会社 | 酸化物透明導電膜と酸化物透明導電膜形成用ターゲットおよび先の酸化物透明導電膜を備えた基板の製造方法と電子機器および液晶表示装置 |
| JP2009537426A (ja) * | 2006-05-18 | 2009-10-29 | イドロ−ケベック | セラミック調製方法、かくして得られるセラミックならびに特にスパッタリング標的としてのその使用 |
| JP2011190542A (ja) * | 1999-11-25 | 2011-09-29 | Idemitsu Kosan Co Ltd | スパッタリングターゲット、透明導電性酸化物、およびスパッタリングターゲットの製造方法 |
| JP4947942B2 (ja) * | 2005-09-20 | 2012-06-06 | 出光興産株式会社 | スパッタリングターゲット |
| JP2013256425A (ja) * | 2012-06-14 | 2013-12-26 | Sumitomo Metal Mining Co Ltd | Ｉｔｏスパッタリングターゲット用酸化スズ粉末、ｉｔｏスパッタリングターゲット用酸化スズおよび酸化インジウムの混合粉末の製造方法、および、ｉｔｏスパッタリングターゲット用焼結体 |
| JP2014015680A (ja) * | 2012-07-10 | 2014-01-30 | Solar Applied Materials Technology Corp | スパッタリングターゲット及びそれにより得られる酸化金属薄膜 |
| JP2014152353A (ja) * | 2013-02-06 | 2014-08-25 | Sumitomo Metal Mining Co Ltd | 酸化インジウム系の酸化物焼結体およびその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4947942B1 (zh) | 1969-09-20 | 1974-12-18 | ||
| JP2000195101A (ja) * | 1998-12-28 | 2000-07-14 | Japan Energy Corp | 光ディスク保護膜及び同保護膜形成用スパッタリングタ―ゲット |
| TWI269817B (en) * | 1999-11-25 | 2007-01-01 | Idemitsu Kosan Co | Sputtering target, transparent conductive oxide, and process for producing the sputtering target |
| JP4646415B2 (ja) * | 2001-02-08 | 2011-03-09 | 株式会社倉元製作所 | Ａｇ系薄膜 |
| EP1626416A4 (en) * | 2003-05-20 | 2007-11-07 | Idemitsu Kosan Co | AMORPHOUS TRANSPARENT CONDUCTIVE FILM, SPRAY TARGET AS A RAW MATERIAL, AMORPHOUS TRANSPARENT ELECTRODE SUBSTRATE, PROCESS FOR PRODUCING THE SAME, AND COLOR FILTER FOR A LIQUID CRYSTAL DISPLAY |
| WO2006075483A1 (ja) * | 2005-01-12 | 2006-07-20 | Idemitsu Kosan Co., Ltd. | ＴＦＴ基板及びその製造方法、及び、Ａｌ配線を備えた透明導電膜積層基板及びその製造方法、及び、Ａｌ配線を備えた透明導電膜積層回路基板及びその製造方法、及び、酸化物透明導電膜材料 |
| JP4761868B2 (ja) * | 2005-07-27 | 2011-08-31 | 出光興産株式会社 | スパッタリングターゲット、その製造方法及び透明導電膜 |
| US8637124B2 (en) * | 2005-09-22 | 2014-01-28 | Idemitsu Kosan Co., Ltd. | Oxide material and sputtering target |
| WO2007069415A1 (ja) * | 2005-12-13 | 2007-06-21 | Idemitsu Kosan Co., Ltd. | 真空蒸着用焼結体 |
| JP2010070409A (ja) * | 2008-09-17 | 2010-04-02 | Idemitsu Kosan Co Ltd | 酸化物焼結体の製造方法 |
| JP2010070410A (ja) * | 2008-09-17 | 2010-04-02 | Idemitsu Kosan Co Ltd | 酸化物焼結体の製造方法 |
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Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011190542A (ja) * | 1999-11-25 | 2011-09-29 | Idemitsu Kosan Co Ltd | スパッタリングターゲット、透明導電性酸化物、およびスパッタリングターゲットの製造方法 |
| JP3961172B2 (ja) * | 1999-11-26 | 2007-08-22 | アルプス電気株式会社 | 酸化物透明導電膜と酸化物透明導電膜形成用ターゲットおよび先の酸化物透明導電膜を備えた基板の製造方法と電子機器および液晶表示装置 |
| JP2007063649A (ja) * | 2005-09-01 | 2007-03-15 | Idemitsu Kosan Co Ltd | スパッタリングターゲット及び透明導電膜 |
| JP4947942B2 (ja) * | 2005-09-20 | 2012-06-06 | 出光興産株式会社 | スパッタリングターゲット |
| JP2009537426A (ja) * | 2006-05-18 | 2009-10-29 | イドロ−ケベック | セラミック調製方法、かくして得られるセラミックならびに特にスパッタリング標的としてのその使用 |
| JP2013256425A (ja) * | 2012-06-14 | 2013-12-26 | Sumitomo Metal Mining Co Ltd | Ｉｔｏスパッタリングターゲット用酸化スズ粉末、ｉｔｏスパッタリングターゲット用酸化スズおよび酸化インジウムの混合粉末の製造方法、および、ｉｔｏスパッタリングターゲット用焼結体 |
| JP2014015680A (ja) * | 2012-07-10 | 2014-01-30 | Solar Applied Materials Technology Corp | スパッタリングターゲット及びそれにより得られる酸化金属薄膜 |
| JP2014152353A (ja) * | 2013-02-06 | 2014-08-25 | Sumitomo Metal Mining Co Ltd | 酸化インジウム系の酸化物焼結体およびその製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| A. AMBROSINI ET AL.: "Zinc Doping in Cosubstituted In2-2xSnxZnxO3-δ", CHEMISTRY OF MATERIALS, vol. vol. 14 (2002), JPN6017002768, 13 December 2001 (2001-12-13), pages pp. 58-63 * |
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| Publication number | Publication date |
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| CN108220893B (zh) | 2020-11-20 |
| TW201823160A (zh) | 2018-07-01 |
| KR20180073507A (ko) | 2018-07-02 |
| CN108220893A (zh) | 2018-06-29 |
| JP2018104743A (ja) | 2018-07-05 |
| KR102089842B1 (ko) | 2020-03-16 |
| TWI644867B (zh) | 2018-12-21 |
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