JP6147177B2 - アンテナカバー及びそれを用いたプラズマ発生装置 - Google Patents

アンテナカバー及びそれを用いたプラズマ発生装置 Download PDF

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Publication number
JP6147177B2
JP6147177B2 JP2013256014A JP2013256014A JP6147177B2 JP 6147177 B2 JP6147177 B2 JP 6147177B2 JP 2013256014 A JP2013256014 A JP 2013256014A JP 2013256014 A JP2013256014 A JP 2013256014A JP 6147177 B2 JP6147177 B2 JP 6147177B2
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JP
Japan
Prior art keywords
antenna
antenna cover
thickness
plasma
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2013256014A
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English (en)
Japanese (ja)
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JP2015115172A (ja
JP2015115172A5 (enExample
Inventor
史郎 二宮
史郎 二宮
正輝 佐藤
正輝 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Heavy Industries Ion Technology Co Ltd
Original Assignee
Sumitomo Heavy Industries Ion Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Heavy Industries Ion Technology Co Ltd filed Critical Sumitomo Heavy Industries Ion Technology Co Ltd
Priority to JP2013256014A priority Critical patent/JP6147177B2/ja
Priority to TW103141194A priority patent/TWI659567B/zh
Priority to CN201410738797.5A priority patent/CN104716424B/zh
Priority to KR1020140174770A priority patent/KR102226099B1/ko
Priority to US14/566,133 priority patent/US9502759B2/en
Publication of JP2015115172A publication Critical patent/JP2015115172A/ja
Publication of JP2015115172A5 publication Critical patent/JP2015115172A5/ja
Application granted granted Critical
Publication of JP6147177B2 publication Critical patent/JP6147177B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/40—Radiating elements coated with or embedded in protective material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
    • H01Q1/421—Means for correcting aberrations introduced by a radome
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma Technology (AREA)
  • Details Of Aerials (AREA)
JP2013256014A 2013-12-11 2013-12-11 アンテナカバー及びそれを用いたプラズマ発生装置 Active JP6147177B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013256014A JP6147177B2 (ja) 2013-12-11 2013-12-11 アンテナカバー及びそれを用いたプラズマ発生装置
TW103141194A TWI659567B (zh) 2013-12-11 2014-11-27 天線罩及使用該天線罩之等離子產生裝置
CN201410738797.5A CN104716424B (zh) 2013-12-11 2014-12-05 天线罩及使用该天线罩的等离子产生装置
KR1020140174770A KR102226099B1 (ko) 2013-12-11 2014-12-08 안테나커버 및 이를 이용한 플라즈마 발생장치
US14/566,133 US9502759B2 (en) 2013-12-11 2014-12-10 Antenna cover and plasma generating device using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013256014A JP6147177B2 (ja) 2013-12-11 2013-12-11 アンテナカバー及びそれを用いたプラズマ発生装置

Publications (3)

Publication Number Publication Date
JP2015115172A JP2015115172A (ja) 2015-06-22
JP2015115172A5 JP2015115172A5 (enExample) 2016-04-28
JP6147177B2 true JP6147177B2 (ja) 2017-06-14

Family

ID=53272106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013256014A Active JP6147177B2 (ja) 2013-12-11 2013-12-11 アンテナカバー及びそれを用いたプラズマ発生装置

Country Status (5)

Country Link
US (1) US9502759B2 (enExample)
JP (1) JP6147177B2 (enExample)
KR (1) KR102226099B1 (enExample)
CN (1) CN104716424B (enExample)
TW (1) TWI659567B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109300758A (zh) * 2018-09-27 2019-02-01 德淮半导体有限公司 离子植入机及离子源发生装置
WO2021261484A1 (ja) * 2020-06-23 2021-12-30 三国電子有限会社 誘導結合プラズマによりスパッタリング成膜を行う成膜装置
CN113972475B (zh) * 2020-07-24 2024-03-08 启碁科技股份有限公司 天线结构
US20230083497A1 (en) * 2021-09-15 2023-03-16 Applied Materials, Inc. Uniform plasma linear ion source

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0718433A (ja) 1993-06-30 1995-01-20 Kobe Steel Ltd Ｉｃｐスパッタリング処理装置
US5824158A (en) 1993-06-30 1998-10-20 Kabushiki Kaisha Kobe Seiko Sho Chemical vapor deposition using inductively coupled plasma and system therefor
JP4122467B2 (ja) 1998-02-17 2008-07-23 株式会社東芝 高周波放電装置及び高周波処理装置
JPH11317299A (ja) * 1998-02-17 1999-11-16 Toshiba Corp 高周波放電方法及びその装置並びに高周波処理装置
JP4089022B2 (ja) 1998-07-22 2008-05-21 日新イオン機器株式会社 自己電子放射型ｅｃｒイオンプラズマ源
JP2001203099A (ja) * 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
KR100523851B1 (ko) * 2003-05-07 2005-10-27 학교법인 성균관대학 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치
JP5162108B2 (ja) * 2005-10-28 2013-03-13 日新電機株式会社 プラズマ生成方法及び装置並びにプラズマ処理装置
JP4001185B1 (ja) 2007-03-06 2007-10-31 日新イオン機器株式会社 プラズマ発生装置
JP5329796B2 (ja) * 2007-11-14 2013-10-30 株式会社イー・エム・ディー プラズマ処理装置
KR20090079696A (ko) * 2008-01-18 2009-07-22 삼성전자주식회사 선형 안테나를 구비한 플라즈마 처리 장치
JP4992885B2 (ja) 2008-11-21 2012-08-08 日新イオン機器株式会社 プラズマ発生装置
TW201105183A (en) * 2009-07-21 2011-02-01 Delta Electronics Inc Plasma generating apparatus
CN101990352A (zh) * 2009-08-07 2011-03-23 台达电子工业股份有限公司 电浆产生装置
WO2013030953A1 (ja) * 2011-08-30 2013-03-07 株式会社イー・エム・ディー プラズマ処理装置用アンテナ及び該アンテナを用いたプラズマ処理装置
JP2013089477A (ja) * 2011-10-19 2013-05-13 Nissin Electric Co Ltd プラズマ発生装置

Also Published As

Publication number Publication date
KR20150068307A (ko) 2015-06-19
JP2015115172A (ja) 2015-06-22
KR102226099B1 (ko) 2021-03-09
CN104716424A (zh) 2015-06-17
TWI659567B (zh) 2019-05-11
US20150162657A1 (en) 2015-06-11
CN104716424B (zh) 2020-08-21
TW201524006A (zh) 2015-06-16
US9502759B2 (en) 2016-11-22

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