TWI659567B - 天線罩及使用該天線罩之等離子產生裝置 - Google Patents
天線罩及使用該天線罩之等離子產生裝置 Download PDFInfo
- Publication number
- TWI659567B TWI659567B TW103141194A TW103141194A TWI659567B TW I659567 B TWI659567 B TW I659567B TW 103141194 A TW103141194 A TW 103141194A TW 103141194 A TW103141194 A TW 103141194A TW I659567 B TWI659567 B TW I659567B
- Authority
- TW
- Taiwan
- Prior art keywords
- radome
- antenna
- thickness
- plasma
- terminal
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000005192 partition Methods 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 23
- 230000002829 reductive effect Effects 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/40—Radiating elements coated with or embedded in protective material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
- H01Q1/421—Means for correcting aberrations introduced by a radome
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Plasma Technology (AREA)
- Details Of Aerials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013256014A JP6147177B2 (ja) | 2013-12-11 | 2013-12-11 | アンテナカバー及びそれを用いたプラズマ発生装置 |
| JP2013-256014 | 2013-12-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201524006A TW201524006A (zh) | 2015-06-16 |
| TWI659567B true TWI659567B (zh) | 2019-05-11 |
Family
ID=53272106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103141194A TWI659567B (zh) | 2013-12-11 | 2014-11-27 | 天線罩及使用該天線罩之等離子產生裝置 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9502759B2 (enExample) |
| JP (1) | JP6147177B2 (enExample) |
| KR (1) | KR102226099B1 (enExample) |
| CN (1) | CN104716424B (enExample) |
| TW (1) | TWI659567B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300758A (zh) * | 2018-09-27 | 2019-02-01 | 德淮半导体有限公司 | 离子植入机及离子源发生装置 |
| WO2021261484A1 (ja) * | 2020-06-23 | 2021-12-30 | 三国電子有限会社 | 誘導結合プラズマによりスパッタリング成膜を行う成膜装置 |
| CN113972475B (zh) * | 2020-07-24 | 2024-03-08 | 启碁科技股份有限公司 | 天线结构 |
| US20230083497A1 (en) * | 2021-09-15 | 2023-03-16 | Applied Materials, Inc. | Uniform plasma linear ion source |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0718433A (ja) | 1993-06-30 | 1995-01-20 | Kobe Steel Ltd | Ｉｃｐスパッタリング処理装置 |
| US5824158A (en) | 1993-06-30 | 1998-10-20 | Kabushiki Kaisha Kobe Seiko Sho | Chemical vapor deposition using inductively coupled plasma and system therefor |
| JP4122467B2 (ja) | 1998-02-17 | 2008-07-23 | 株式会社東芝 | 高周波放電装置及び高周波処理装置 |
| JPH11317299A (ja) * | 1998-02-17 | 1999-11-16 | Toshiba Corp | 高周波放電方法及びその装置並びに高周波処理装置 |
| JP4089022B2 (ja) | 1998-07-22 | 2008-05-21 | 日新イオン機器株式会社 | 自己電子放射型ｅｃｒイオンプラズマ源 |
| JP2001203099A (ja) * | 2000-01-20 | 2001-07-27 | Yac Co Ltd | プラズマ生成装置およびプラズマ処理装置 |
| KR100523851B1 (ko) * | 2003-05-07 | 2005-10-27 | 학교법인 성균관대학 | 대면적처리용 내장형 선형안테나를 구비하는 유도결합플라즈마 처리장치 |
| JP5162108B2 (ja) * | 2005-10-28 | 2013-03-13 | 日新電機株式会社 | プラズマ生成方法及び装置並びにプラズマ処理装置 |
| JP4001185B1 (ja) | 2007-03-06 | 2007-10-31 | 日新イオン機器株式会社 | プラズマ発生装置 |
| JP5329796B2 (ja) * | 2007-11-14 | 2013-10-30 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| KR20090079696A (ko) * | 2008-01-18 | 2009-07-22 | 삼성전자주식회사 | 선형 안테나를 구비한 플라즈마 처리 장치 |
| JP4992885B2 (ja) | 2008-11-21 | 2012-08-08 | 日新イオン機器株式会社 | プラズマ発生装置 |
| TW201105183A (en) * | 2009-07-21 | 2011-02-01 | Delta Electronics Inc | Plasma generating apparatus |
| CN101990352A (zh) * | 2009-08-07 | 2011-03-23 | 台达电子工业股份有限公司 | 电浆产生装置 |
| WO2013030953A1 (ja) * | 2011-08-30 | 2013-03-07 | 株式会社イー・エム・ディー | プラズマ処理装置用アンテナ及び該アンテナを用いたプラズマ処理装置 |
| JP2013089477A (ja) * | 2011-10-19 | 2013-05-13 | Nissin Electric Co Ltd | プラズマ発生装置 |
-
2013
- 2013-12-11 JP JP2013256014A patent/JP6147177B2/ja active Active
-
2014
- 2014-11-27 TW TW103141194A patent/TWI659567B/zh active
- 2014-12-05 CN CN201410738797.5A patent/CN104716424B/zh not_active Expired - Fee Related
- 2014-12-08 KR KR1020140174770A patent/KR102226099B1/ko active Active
- 2014-12-10 US US14/566,133 patent/US9502759B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20150068307A (ko) | 2015-06-19 |
| JP2015115172A (ja) | 2015-06-22 |
| KR102226099B1 (ko) | 2021-03-09 |
| CN104716424A (zh) | 2015-06-17 |
| JP6147177B2 (ja) | 2017-06-14 |
| US20150162657A1 (en) | 2015-06-11 |
| CN104716424B (zh) | 2020-08-21 |
| TW201524006A (zh) | 2015-06-16 |
| US9502759B2 (en) | 2016-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3714924B2 (ja) | プラズマ処理装置 | |
| US8590485B2 (en) | Small form factor plasma source for high density wide ribbon ion beam generation | |
| US7673583B2 (en) | Locally-efficient inductive plasma coupling for plasma processing system | |
| US20100066251A1 (en) | Plasma processing apparatus | |
| TWI659567B (zh) | 天線罩及使用該天線罩之等離子產生裝置 | |
| TWI573168B (zh) | A plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method | |
| EP3648553B1 (en) | Plasma treatment device | |
| KR20160055241A (ko) | 플라즈마 발생 장치 | |
| KR20080077670A (ko) | 유도성으로 결합된 고주파 플라즈마 플러드 건을 제공하기위한 기법 | |
| JP7199423B2 (ja) | イオンビーム加速のためのｒｆ共振器 | |
| KR100903295B1 (ko) | 이온빔 발생 장치 및 이온 빔 발생 방법 | |
| KR20070053153A (ko) | 이온화 물리적 기상 증착법용의 자성적으로 향상된 용량플라즈마 소스 | |
| KR101281188B1 (ko) | 유도 결합 플라즈마 반응기 | |
| KR101718182B1 (ko) | 플라즈마 처리 장치, 플라즈마 생성 장치, 안테나 구조체, 및 플라즈마 생성 방법 | |
| KR102584240B1 (ko) | 집속 유도 결합 플라즈마용 페라이트 쉴드를 포함하는 플라즈마 발생장치 | |
| JP6666599B2 (ja) | 基板処理装置 | |
| US20240387151A1 (en) | Inductively coupled plasma apparatus with novel faraday shield | |
| TWI881491B (zh) | 天線總成及處理系統 | |
| JP6150705B2 (ja) | マイクロ波イオン源 | |
| JP2015109150A (ja) | イオン源 | |
| KR20090073548A (ko) | 국소영역의 플라즈마 차폐장치 및 그 차폐방법 | |
| JP2017123265A (ja) | イオン源および絶縁機構 | |
| JP2017134934A (ja) | イオン源 |