JP6146097B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6146097B2 JP6146097B2 JP2013078779A JP2013078779A JP6146097B2 JP 6146097 B2 JP6146097 B2 JP 6146097B2 JP 2013078779 A JP2013078779 A JP 2013078779A JP 2013078779 A JP2013078779 A JP 2013078779A JP 6146097 B2 JP6146097 B2 JP 6146097B2
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- 239000004065 semiconductor Substances 0.000 title claims description 93
- 230000002093 peripheral effect Effects 0.000 claims description 90
- 230000015556 catabolic process Effects 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 22
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 description 59
- 230000000694 effects Effects 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000007480 spreading Effects 0.000 description 4
- 108091006146 Channels Proteins 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 2
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002040 relaxant effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Description
まず、この発明の実施の形態1における半導体装置の構成を説明する。図1は本実施の形態に係る半導体装置を上面から見た図である。図1のように、半導体素子1において、終端領域3が能動領域2の周囲を取り囲むように形成されている。また、終端領域3の外側がエッジ領域4となる。エッジ領域4にはプロセスを行うための識別あるいは管理用のパターン21が設けられている。
図9は、本発明の実施の形態2に係る半導体装置の終端領域3のコーナー部を示す上面図である。本発明の実施の形態2では、図5における第1フィールドプレート12に第1追加プレート12eを、第2フィールドプレート15に第2追加プレート15dを備えたことを特徴とする。それ以外については、実施の形態1と同様である。本実施の形態によれば、第1フィールドプレート12に第1追加プレート12eを、第2フィールドプレート15に第2追加プレート15dを備えたので、電界緩和機能をさらに向上することができる。
図12は、本発明の実施の形態3に係る半導体装置の終端領域3のコーナー部を示す断面図である。本発明の実施の形態3では図2における耐圧保持領域8を分離したことを特徴とする。それ以外については、実施の形態1または2と同様である。本実施の形態によれば、電界緩和機能をさらに向上することができる。
Claims (8)
- 第1導電型の半導体基板と、
前記半導体基板に設けられ、表面に表面電極が形成された能動領域と、
前記半導体基板の表層部に前記能動領域を取り囲んで形成された第2導電型の耐圧保持領域と、
前記耐圧保持領域の表面上に形成された絶縁膜と、
直線部と前記直線部を連結するコーナー部とを有し、前記表面電極と電気的に接続された最内周のプレートと、前記半導体基板と電気的に接続された最外周のプレートと、を含む多重環状のプレートからなり、前記絶縁膜上に形成された第1フィールドプレートと、 を備え、
前記最外周のプレートの第1外周曲線の前記コーナー部における第1曲率半径は、前記第1曲率半径の中心位置から前記直線部における前記第1外周曲線の延長線への垂線の距離と等しく、
前記最外周のプレートより内側に配置された前記プレートの第2外周曲線の前記コーナー部における第2曲率半径の中心位置は、前記第1曲率半径の中心位置と等しく、
前記第2曲率半径は、前記中心位置から前記直線部における前記第2外周曲線の延長線への垂線の距離より大きいこと、
を特徴とする半導体装置。 - 前記第1フィールドプレートは、前記コーナー部における幅が前記直線部における幅よりも狭い前記最外周のプレートを備えていること、
を特徴とする請求項1に記載の半導体装置。 - 前記第1フィールドプレートは、前記最外周のプレートより内側に、前記コーナー部における幅が前記直線部における幅と等しい前記プレートを備えていること、
を特徴とする請求項1または2に記載の半導体装置。 - 前記第1フィールドプレートは、前記最外周のプレートと前記最内周のプレートとの間に、前記コーナー部に第1追加プレートを設けたこと、
を特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。 - 前記第1追加プレートが、前記最内周プレートの1つ外側に設けられた前記プレートの内側に配置されたこと、
を特徴とする請求項4に記載の半導体装置。 - 前記絶縁膜内に、前記第1フィールドプレートと対向し、直線部と前記直線部を連結するコーナー部とを有する多重環状のプレートからなる第2フィールドプレートを備えたこと、
を特徴とする請求項1乃至5のいずれか1項に記載の半導体装置。 - 前記絶縁膜内に、前記第1フィールドプレートと対向し、直線部と前記直線部を連結するコーナー部とを有する多重環状のプレートからなる第2フィールドプレートを備え、
前記第2フィールドプレートが、前記絶縁膜内に前記第1追加プレートと対向する第2追加プレートを備えたこと、
を特徴とする請求項4または5に記載の半導体装置。 - 前記耐圧保持領域は、多重環状であること、
を特徴とする請求項1乃至7のいずれか1項に記載の半導体装置。
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JP2013078779A JP6146097B2 (ja) | 2013-04-04 | 2013-04-04 | 半導体装置 |
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JP2013078779A JP6146097B2 (ja) | 2013-04-04 | 2013-04-04 | 半導体装置 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP6199232B2 (ja) * | 2014-04-22 | 2017-09-20 | 株式会社豊田中央研究所 | 半導体装置 |
CN106252393B (zh) * | 2016-08-25 | 2019-04-12 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106298874B (zh) * | 2016-08-25 | 2019-08-02 | 电子科技大学 | 横向高压功率器件的结终端结构 |
WO2019043867A1 (ja) * | 2017-08-31 | 2019-03-07 | 新電元工業株式会社 | 半導体装置 |
JP7150539B2 (ja) * | 2018-09-15 | 2022-10-11 | 株式会社東芝 | 半導体装置 |
JP6887541B1 (ja) * | 2020-02-21 | 2021-06-16 | 三菱電機株式会社 | 半導体装置 |
CN115312586B (zh) * | 2022-09-01 | 2023-10-17 | 江苏长晶科技股份有限公司 | 一种碳化硅功率器件 |
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JPS58108771A (ja) * | 1981-12-22 | 1983-06-28 | Fujitsu Ltd | 半導体装置 |
DE102005023668B3 (de) * | 2005-05-23 | 2006-11-09 | Infineon Technologies Ag | Halbleiterbauelement mit einer Randstruktur mit Spannungsdurchbruch im linearen Bereich |
JP5391447B2 (ja) * | 2009-04-06 | 2014-01-15 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
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