JP6144573B2 - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
- Publication number
- JP6144573B2 JP6144573B2 JP2013172394A JP2013172394A JP6144573B2 JP 6144573 B2 JP6144573 B2 JP 6144573B2 JP 2013172394 A JP2013172394 A JP 2013172394A JP 2013172394 A JP2013172394 A JP 2013172394A JP 6144573 B2 JP6144573 B2 JP 6144573B2
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- Prior art keywords
- quantum dot
- layer
- solar cell
- barrier layer
- layers
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- 239000002096 quantum dot Substances 0.000 claims description 108
- 230000004888 barrier function Effects 0.000 claims description 54
- 239000004065 semiconductor Substances 0.000 claims description 40
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- 238000003475 lamination Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 144
- 239000002245 particle Substances 0.000 description 12
- 101100063942 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) dot-1 gene Proteins 0.000 description 9
- 239000000969 carrier Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000033558 biomineral tissue development Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000004083 survival effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 102000008857 Ferritin Human genes 0.000 description 1
- 238000008416 Ferritin Methods 0.000 description 1
- 108050000784 Ferritin Proteins 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005639 quantum mechanical wave Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Description
らに、量子ドット型太陽電池によれば、熱として失われるエネルギーを低減することが可能になるため、理論限界効率を60%以上にまで向上させることが可能になると考えられている。
多く、これにより電流として取り出すことが困難となり、光電変換効率を高めることができないという問題があった。
と分けて示しているが、実際には障壁層3は連続な層となっていることから、積層方向に3等分したときの外層部および中央部は、積層された量子ドット層5a〜5cを積層方向の長さで3等分したものとする。
ト1のサイズは、最大径が3nm〜20nmであることが望ましい。
子層堆積法)等の手法により比抵抗の高いZnO膜(障壁層3)を半導体粒子(量子ドット1)の周囲に形成する。
3・・・・・・・・・・・障壁層
5a、5b、5c・・・・量子ドット層
7a、7b・・・・・・・電極
9・・・・・・・・・・・キャリア
11・・・・・・・・・・半導体層
Claims (4)
- 量子ドットおよび該量子ドットを囲む障壁層を有する量子ドット層を3層以上備えている太陽電池であって、
前記量子ドットはエネルギーギャップが0.15〜1.20eV、
前記障壁層はエネルギーギャップが2.0〜10.0eVであり、
前記量子ドット層のうち外層側に配置されている量子ドット層は、
前記障壁層の母材がAl−Zn−OxまたはGa−Zn−Oxであるとともに、
積層方向の中央部に配置されている量子ドット層に比べて、前記障壁層の比抵抗が一桁以上低く、光電変換用の素子として適用されるものであることを特徴とする太陽電池。 - 前記障壁層を有する量子ドット層が最外層に設けられていることを特徴とする請求項1に記載の太陽電池。
- 前記障壁層が透光性を有していることを特徴とする請求項1または2に記載の太陽電池。
- 最外層に配置された前記量子ドット層の少なくとも一方の表面に、n型またはp型の半導体層を備えていることを特徴とする請求項1乃至3のうちいずれかに記載の太陽電池。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013172394A JP6144573B2 (ja) | 2013-08-22 | 2013-08-22 | 太陽電池 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2013172394A JP6144573B2 (ja) | 2013-08-22 | 2013-08-22 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015041706A JP2015041706A (ja) | 2015-03-02 |
JP6144573B2 true JP6144573B2 (ja) | 2017-06-07 |
Family
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JP2013172394A Expired - Fee Related JP6144573B2 (ja) | 2013-08-22 | 2013-08-22 | 太陽電池 |
Country Status (1)
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JP (1) | JP6144573B2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4905623B2 (ja) * | 2004-10-18 | 2012-03-28 | 富士通株式会社 | 太陽電池 |
JP2011040459A (ja) * | 2009-08-07 | 2011-02-24 | National Institute Of Advanced Industrial Science & Technology | 多積層量子ドット構造体および製造方法、それを用いた太陽電池素子および発光素子 |
JP2011060970A (ja) * | 2009-09-09 | 2011-03-24 | Kaneka Corp | 結晶シリコン系太陽電池とその製造方法 |
JP2011100915A (ja) * | 2009-11-09 | 2011-05-19 | Toyota Motor Corp | 光電変換素子 |
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2013
- 2013-08-22 JP JP2013172394A patent/JP6144573B2/ja not_active Expired - Fee Related
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JP2015041706A (ja) | 2015-03-02 |
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