JP6133585B2 - Ｅｕｖフォトレジスト封入 - Google Patents
Ｅｕｖフォトレジスト封入 Download PDFInfo
- Publication number
- JP6133585B2 JP6133585B2 JP2012267237A JP2012267237A JP6133585B2 JP 6133585 B2 JP6133585 B2 JP 6133585B2 JP 2012267237 A JP2012267237 A JP 2012267237A JP 2012267237 A JP2012267237 A JP 2012267237A JP 6133585 B2 JP6133585 B2 JP 6133585B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- photoresist
- silicon
- germanium
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 119
- 238000005538 encapsulation Methods 0.000 title claims description 50
- 238000000034 method Methods 0.000 claims description 102
- 230000008569 process Effects 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 25
- 238000001312 dry etching Methods 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 18
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 17
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 claims description 6
- FCDCNUKQQLSMMN-UHFFFAOYSA-N [GeH4].[Si] Chemical compound [GeH4].[Si] FCDCNUKQQLSMMN-UHFFFAOYSA-N 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 6
- OQNXPQOQCWVVHP-UHFFFAOYSA-N [Si].O=[Ge] Chemical compound [Si].O=[Ge] OQNXPQOQCWVVHP-UHFFFAOYSA-N 0.000 claims description 5
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052986 germanium hydride Inorganic materials 0.000 claims description 5
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 claims description 5
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 230000003313 weakening effect Effects 0.000 claims description 5
- 230000008901 benefit Effects 0.000 description 17
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 17
- 238000000059 patterning Methods 0.000 description 15
- 238000000151 deposition Methods 0.000 description 13
- 239000011295 pitch Substances 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000000671 immersion lithography Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 101100215341 Arabidopsis thaliana ACT12 gene Proteins 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000003917 TEM image Methods 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11194789 | 2011-12-21 | ||
| EP11194789.1 | 2011-12-21 | ||
| EP12150658.8 | 2012-01-10 | ||
| EP20120150658 EP2608247A1 (fr) | 2011-12-21 | 2012-01-10 | Encapsulation de photoréserve pour ultraviolet extrême |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013145874A JP2013145874A (ja) | 2013-07-25 |
| JP6133585B2 true JP6133585B2 (ja) | 2017-05-24 |
Family
ID=45463476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012267237A Active JP6133585B2 (ja) | 2011-12-21 | 2012-12-06 | Ｅｕｖフォトレジスト封入 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8883374B2 (fr) |
| EP (1) | EP2608247A1 (fr) |
| JP (1) | JP6133585B2 (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2843696A1 (fr) * | 2013-08-27 | 2015-03-04 | IMEC vzw | Procédé pour l'implantation de dopant de structures FinFET |
| JP2015084396A (ja) * | 2013-09-19 | 2015-04-30 | 東京エレクトロン株式会社 | エッチング方法 |
| KR102233577B1 (ko) | 2014-02-25 | 2021-03-30 | 삼성전자주식회사 | 반도체 소자의 패턴 형성 방법 |
| US20150340611A1 (en) * | 2014-05-21 | 2015-11-26 | Sony Corporation | Method for a dry exhumation without oxidation of a cell and source line |
| JP6817692B2 (ja) * | 2015-08-27 | 2021-01-20 | 東京エレクトロン株式会社 | プラズマ処理方法 |
| US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
| US10032633B1 (en) * | 2017-01-17 | 2018-07-24 | International Business Machines Corporation | Image transfer using EUV lithographic structure and double patterning process |
| US10796912B2 (en) * | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| KR102527383B1 (ko) * | 2017-09-15 | 2023-04-28 | 삼성전자주식회사 | 핀형 활성 영역을 가지는 반도체 소자 |
| US10656527B2 (en) * | 2017-12-21 | 2020-05-19 | International Business Machines Corporation | Patterning material film stack with hard mask layer configured to support selective deposition on patterned resist layer |
| US10658190B2 (en) | 2018-09-24 | 2020-05-19 | International Business Machines Corporation | Extreme ultraviolet lithography patterning with directional deposition |
| US11300881B2 (en) | 2018-10-23 | 2022-04-12 | International Business Machines Corporation | Line break repairing layer for extreme ultraviolet patterning stacks |
| JP2022507368A (ja) | 2018-11-14 | 2022-01-18 | ラム リサーチ コーポレーション | 次世代リソグラフィにおいて有用なハードマスクを作製する方法 |
| US11537049B2 (en) * | 2019-02-26 | 2022-12-27 | Tokyo Electron Limited | Method of line roughness improvement by plasma selective deposition |
| US10971362B2 (en) | 2019-02-27 | 2021-04-06 | International Business Machines Corporation | Extreme ultraviolet patterning process with resist hardening |
| KR20210129739A (ko) | 2019-03-18 | 2021-10-28 | 램 리써치 코포레이션 | 극자외선 (Extreme Ultraviolet) 리소그래피 레지스트들의 거칠기 감소 |
| KR20210149893A (ko) | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스 |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| US11410852B2 (en) * | 2019-11-22 | 2022-08-09 | Tokyo Electron Limited | Protective layers and methods of formation during plasma etching processes |
| US11837471B2 (en) | 2019-12-17 | 2023-12-05 | Tokyo Electron Limited | Methods of patterning small features |
| WO2021146138A1 (fr) | 2020-01-15 | 2021-07-22 | Lam Research Corporation | Sous-couche pour adhésion de résine photosensible et réduction de dose |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3962004A (en) * | 1974-11-29 | 1976-06-08 | Rca Corporation | Pattern definition in an organic layer |
| KR20000037885A (ko) | 1998-12-02 | 2000-07-05 | 전주범 | 미세패턴 형성 방법 |
| US6815359B2 (en) * | 2001-03-28 | 2004-11-09 | Advanced Micro Devices, Inc. | Process for improving the etch stability of ultra-thin photoresist |
| US6821905B2 (en) * | 2002-07-30 | 2004-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for avoiding carbon and nitrogen contamination of a dielectric insulating layer |
| US6916746B1 (en) * | 2003-04-09 | 2005-07-12 | Lam Research Corporation | Method for plasma etching using periodic modulation of gas chemistry |
| US20050118531A1 (en) | 2003-12-02 | 2005-06-02 | Hsiu-Chun Lee | Method for controlling critical dimension by utilizing resist sidewall protection |
| KR100590727B1 (ko) * | 2004-02-24 | 2006-06-19 | 한국기계연구원 | 임프린트된 나노구조물을 이용한 미세접촉 인쇄기법과이의 나노 구조물 |
| US7482280B2 (en) | 2005-08-15 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a lithography pattern |
| US7704680B2 (en) | 2006-06-08 | 2010-04-27 | Advanced Micro Devices, Inc. | Double exposure technology using high etching selectivity |
| US20090104566A1 (en) * | 2007-10-19 | 2009-04-23 | International Business Machines Corporation | Process of multiple exposures with spin castable film |
| KR20100106501A (ko) * | 2007-12-21 | 2010-10-01 | 램 리써치 코포레이션 | 고 식각율 레지스트 마스크를 이용한 식각 |
| US20100040838A1 (en) | 2008-08-15 | 2010-02-18 | Abdallah David J | Hardmask Process for Forming a Reverse Tone Image |
| JP4985987B2 (ja) | 2008-10-15 | 2012-07-25 | 信越化学工業株式会社 | パターン形成方法 |
| US8536064B2 (en) * | 2010-02-08 | 2013-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Double patterning strategy for contact hole and trench in photolithography |
-
2012
- 2012-01-10 EP EP20120150658 patent/EP2608247A1/fr not_active Withdrawn
- 2012-12-05 US US13/705,418 patent/US8883374B2/en active Active
- 2012-12-06 JP JP2012267237A patent/JP6133585B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013145874A (ja) | 2013-07-25 |
| US20130164657A1 (en) | 2013-06-27 |
| EP2608247A1 (fr) | 2013-06-26 |
| US8883374B2 (en) | 2014-11-11 |
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Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150618 |
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