JP6128847B2 - 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品 - Google Patents

自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品 Download PDF

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JP6128847B2
JP6128847B2 JP2012517584A JP2012517584A JP6128847B2 JP 6128847 B2 JP6128847 B2 JP 6128847B2 JP 2012517584 A JP2012517584 A JP 2012517584A JP 2012517584 A JP2012517584 A JP 2012517584A JP 6128847 B2 JP6128847 B2 JP 6128847B2
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substrate
metal
pattern
patterned
stamp
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Japanese (ja)
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JP2012531518A (ja
JP2012531518A5 (enExample
Inventor
リジュン ツー，
リジュン ツー，
マシュー， エイチ． フレイ，
マシュー， エイチ． フレイ，
ミュンチャン カン，
ミュンチャン カン，
ジェフリー， エイチ． トッキー，
ジェフリー， エイチ． トッキー，
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2012531518A5 publication Critical patent/JP2012531518A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/061—Etching masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/086—Using an inert gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/122—Organic non-polymeric compounds, e.g. oil, wax or thiol
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/068—Apparatus for etching printed circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
JP2012517584A 2009-06-25 2010-06-17 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品 Active JP6128847B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22040709P 2009-06-25 2009-06-25
US61/220,407 2009-06-25
PCT/US2010/038942 WO2010151471A1 (en) 2009-06-25 2010-06-17 Methods of wet etching a self-assembled monolayer patterned substrate and metal patterned articles

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015137927A Division JP6399975B2 (ja) 2009-06-25 2015-07-09 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品

Publications (3)

Publication Number Publication Date
JP2012531518A JP2012531518A (ja) 2012-12-10
JP2012531518A5 JP2012531518A5 (enExample) 2013-07-25
JP6128847B2 true JP6128847B2 (ja) 2017-05-17

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JP2012517584A Active JP6128847B2 (ja) 2009-06-25 2010-06-17 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品
JP2015137927A Expired - Fee Related JP6399975B2 (ja) 2009-06-25 2015-07-09 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品
JP2017050042A Withdrawn JP2017166070A (ja) 2009-06-25 2017-03-15 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品

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JP2015137927A Expired - Fee Related JP6399975B2 (ja) 2009-06-25 2015-07-09 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品
JP2017050042A Withdrawn JP2017166070A (ja) 2009-06-25 2017-03-15 自己組織化単層パターン化基材の湿式エッチング方法、及び金属パターン化物品

Country Status (5)

Country Link
US (1) US8647522B2 (enExample)
EP (1) EP2446067B1 (enExample)
JP (3) JP6128847B2 (enExample)
CN (1) CN102803562B (enExample)
WO (1) WO2010151471A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010099132A2 (en) 2009-02-26 2010-09-02 3M Innovative Properties Company Touch screen sensor and patterned substrate having overlaid micropatterns with low visibility
JP5747027B2 (ja) 2009-06-30 2015-07-08 スリーエム イノベイティブ プロパティズ カンパニー 図形を有する電子ディスプレイ及び金属微小パターン化基材
EP2516162A4 (en) 2009-12-22 2015-10-28 3M Innovative Properties Co APPARATUS AND METHOD FOR PRINTING MICROCONTACTS USING A PRESSURIZED ROLL
CN103262342B (zh) 2010-12-16 2016-08-10 3M创新有限公司 透明性微图案化rfid天线以及装配透明性微图案化rfid天线的制品
SG11201400767WA (en) 2011-09-30 2014-04-28 3M Innovative Properties Co Methods of continuously wet etching a patterned substrate
WO2015069538A1 (en) 2013-11-06 2015-05-14 3M Innovative Properties Company Microcontact printing stamps with functional features
WO2015126372A1 (en) * 2014-02-19 2015-08-27 Uni-Pixel Displays, Inc. Method of passivating a conductive pattern with self-assembling monolayers
US9232661B1 (en) 2014-09-22 2016-01-05 International Business Machines Corporation Magnetically controllable fluidic etching process
CN104538138B (zh) * 2014-12-30 2017-12-29 南京萨特科技发展有限公司 精密贴片电阻器的制作方法
CN104630773B (zh) * 2015-03-07 2017-01-18 宋彦震 一种全自动pcb板腐蚀箱
CN106455348A (zh) * 2016-11-29 2017-02-22 福建农林大学 Pcb板升降腐蚀机及使用方法
CN107833827B (zh) * 2017-10-25 2020-07-31 武汉华星光电技术有限公司 一种阵列基板的刻蚀方法
JP7368264B2 (ja) * 2019-02-20 2023-10-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、及び基板処理方法
CN113463099B (zh) * 2020-03-31 2023-08-29 长沙韶光铬版有限公司 一种银的细微图形化蚀刻方法
FR3110716B1 (fr) * 2020-05-19 2022-04-29 Commissariat Energie Atomique Procede de fabrication de moules pour lithographie par nano-impression
CN116683283A (zh) * 2023-05-30 2023-09-01 中国科学院半导体研究所 半导体激光器湿法腐蚀方法及其装置

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GB1080536A (en) * 1964-09-18 1967-08-23 Her Majesty S Principal Sec De Improvements in or relating to chemical etching
US3483049A (en) * 1965-12-20 1969-12-09 Teletype Corp Method of froth etching
US3565707A (en) * 1969-03-03 1971-02-23 Fmc Corp Metal dissolution
DE2030304C3 (de) * 1970-06-19 1981-06-19 Walter 6983 Kreuzwertheim Lemmen Verfahren zum Ätzen von Metall
DE2353936A1 (de) * 1973-10-27 1975-05-07 Rudolf Schmidt Verfahren und vorrichtung zur verbesserung und/oder beschleunigung chemischer vorgaenge in fluessigkeiten und baedern
US4602184A (en) * 1984-10-29 1986-07-22 Ford Motor Company Apparatus for applying high frequency ultrasonic energy to cleaning and etching solutions
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WO1997007429A1 (en) 1995-08-18 1997-02-27 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
US7045195B2 (en) * 2000-10-16 2006-05-16 Governing Council Of The University Of Toronto Composite materials having substrates with self-assembled colloidal crystalline patterns thereon
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JP2015137927A (ja) * 2014-01-22 2015-07-30 株式会社ブルービジョン 撮像装置及び検査システム

Also Published As

Publication number Publication date
JP2012531518A (ja) 2012-12-10
JP6399975B2 (ja) 2018-10-03
JP2015214757A (ja) 2015-12-03
US8647522B2 (en) 2014-02-11
CN102803562B (zh) 2015-09-30
US20120082825A1 (en) 2012-04-05
EP2446067B1 (en) 2019-11-20
EP2446067A1 (en) 2012-05-02
WO2010151471A1 (en) 2010-12-29
CN102803562A (zh) 2012-11-28
JP2017166070A (ja) 2017-09-21

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