JP6125521B2 - 中間周波数ｒｆ帯域の高電圧バイアス電力のためのバイパスコンデンサ - Google Patents

中間周波数ｒｆ帯域の高電圧バイアス電力のためのバイパスコンデンサ Download PDF

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Publication number
JP6125521B2
JP6125521B2 JP2014543598A JP2014543598A JP6125521B2 JP 6125521 B2 JP6125521 B2 JP 6125521B2 JP 2014543598 A JP2014543598 A JP 2014543598A JP 2014543598 A JP2014543598 A JP 2014543598A JP 6125521 B2 JP6125521 B2 JP 6125521B2
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Prior art keywords
electrostatic chuck
lift
capacitor
lift pin
lift pins
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Japanese (ja)
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JP2015504609A5 (https=
JP2015504609A (ja
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サトー・アーサー
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Lam Research Corp
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Lam Research Corp
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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
    • H02H3/46—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection responsive to frequency deviations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32944—Arc detection
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
    • H05F3/00—Carrying-off electrostatic charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2014543598A 2011-11-23 2012-11-23 中間周波数ｒｆ帯域の高電圧バイアス電力のためのバイパスコンデンサ Active JP6125521B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161563526P 2011-11-23 2011-11-23
US61/563,526 2011-11-23
US13/684,065 2012-11-21
US13/684,065 US9083182B2 (en) 2011-11-21 2012-11-21 Bypass capacitors for high voltage bias power in the mid frequency RF range
PCT/US2012/066467 WO2013078465A1 (en) 2011-11-23 2012-11-23 Bypass capacitors for high voltage bias power in the mid frequency rf range

Publications (3)

Publication Number Publication Date
JP2015504609A JP2015504609A (ja) 2015-02-12
JP2015504609A5 JP2015504609A5 (https=) 2016-01-21
JP6125521B2 true JP6125521B2 (ja) 2017-05-10

Family

ID=48426639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014543598A Active JP6125521B2 (ja) 2011-11-23 2012-11-23 中間周波数ｒｆ帯域の高電圧バイアス電力のためのバイパスコンデンサ

Country Status (5)

Country Link
US (1) US9083182B2 (https=)
JP (1) JP6125521B2 (https=)
KR (1) KR102031389B1 (https=)
TW (1) TWI559359B (https=)
WO (1) WO2013078465A1 (https=)

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US20130128397A1 (en) 2013-05-23
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JP2015504609A (ja) 2015-02-12
WO2013078465A1 (en) 2013-05-30
US9083182B2 (en) 2015-07-14
TWI559359B (zh) 2016-11-21
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