JP6120579B2 - 固体撮像装置の製造方法 - Google Patents

固体撮像装置の製造方法 Download PDF

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Publication number
JP6120579B2
JP6120579B2 JP2013005543A JP2013005543A JP6120579B2 JP 6120579 B2 JP6120579 B2 JP 6120579B2 JP 2013005543 A JP2013005543 A JP 2013005543A JP 2013005543 A JP2013005543 A JP 2013005543A JP 6120579 B2 JP6120579 B2 JP 6120579B2
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Japan
Prior art keywords
layer
color filter
light receiving
forming
sealing layer
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Expired - Fee Related
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JP2013005543A
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English (en)
Japanese (ja)
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JP2014138064A (ja
JP2014138064A5 (enExample
Inventor
政樹 栗原
政樹 栗原
大輔 下山
大輔 下山
伊藤　正孝
正孝 伊藤
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013005543A priority Critical patent/JP6120579B2/ja
Priority to US14/148,077 priority patent/US9269744B2/en
Publication of JP2014138064A publication Critical patent/JP2014138064A/ja
Publication of JP2014138064A5 publication Critical patent/JP2014138064A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2013005543A 2013-01-16 2013-01-16 固体撮像装置の製造方法 Expired - Fee Related JP6120579B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013005543A JP6120579B2 (ja) 2013-01-16 2013-01-16 固体撮像装置の製造方法
US14/148,077 US9269744B2 (en) 2013-01-16 2014-01-06 Manufacturing method of solid-state imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013005543A JP6120579B2 (ja) 2013-01-16 2013-01-16 固体撮像装置の製造方法

Publications (3)

Publication Number Publication Date
JP2014138064A JP2014138064A (ja) 2014-07-28
JP2014138064A5 JP2014138064A5 (enExample) 2016-02-18
JP6120579B2 true JP6120579B2 (ja) 2017-04-26

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JP2013005543A Expired - Fee Related JP6120579B2 (ja) 2013-01-16 2013-01-16 固体撮像装置の製造方法

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US (1) US9269744B2 (enExample)
JP (1) JP6120579B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
JP2020167288A (ja) * 2019-03-29 2020-10-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置のメンテナンス方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001320034A (ja) * 2000-05-09 2001-11-16 Sony Corp 固体撮像素子及びその製造方法
JP2003222705A (ja) * 2002-01-30 2003-08-08 Toppan Printing Co Ltd マイクロレンズの製造方法
JP4212606B2 (ja) * 2006-05-12 2009-01-21 シャープ株式会社 撮像素子の製造方法
JP5364989B2 (ja) * 2007-10-02 2013-12-11 ソニー株式会社 固体撮像装置およびカメラ
JP4835719B2 (ja) * 2008-05-22 2011-12-14 ソニー株式会社 固体撮像装置及び電子機器
JP5423042B2 (ja) 2009-02-25 2014-02-19 ソニー株式会社 固体撮像装置の製造方法
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法

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Publication number Publication date
JP2014138064A (ja) 2014-07-28
US20140199802A1 (en) 2014-07-17
US9269744B2 (en) 2016-02-23

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