JP6116560B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP6116560B2 JP6116560B2 JP2014520879A JP2014520879A JP6116560B2 JP 6116560 B2 JP6116560 B2 JP 6116560B2 JP 2014520879 A JP2014520879 A JP 2014520879A JP 2014520879 A JP2014520879 A JP 2014520879A JP 6116560 B2 JP6116560 B2 JP 6116560B2
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- light emitting
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- 239000010408 film Substances 0.000 claims description 144
- 238000007639 printing Methods 0.000 claims description 144
- 239000010410 layer Substances 0.000 claims description 100
- 230000001681 protective effect Effects 0.000 claims description 90
- 229920005989 resin Polymers 0.000 claims description 76
- 239000011347 resin Substances 0.000 claims description 76
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 11
- 239000012790 adhesive layer Substances 0.000 claims description 8
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 7
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 38
- 239000004020 conductor Substances 0.000 description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 28
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000010703 silicon Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 239000011889 copper foil Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 208000032767 Device breakage Diseases 0.000 description 8
- 238000005219 brazing Methods 0.000 description 8
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- 238000005286 illumination Methods 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000031700 light absorption Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 108010043121 Green Fluorescent Proteins Proteins 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/167—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed resistors
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
- H01L2224/48228—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/0929—Conductive planes
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05K2201/10106—Light emitting diode [LED]
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- Condensed Matter Physics & Semiconductors (AREA)
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Description
2 絶縁性フィルム
3、4、3B、4B、3C、4C 1対のランド部
5、6、5A、6A、5B、6B、5C、6C 外部接続用の1対の端子部
7 接着剤
8、9、8B、9B、8C、9C 貫通導電体 10 白色シリコン樹脂
11 発光素子
12 ワイヤ
13 蛍光体含有シリコン樹脂
14、15、5A1、5A2、6A1、6A2 メッキ層
16、16A〜16D 印刷抵抗
た表面実装型の発光装置の実施形態1〜6について図面を参照しながら詳細に説明する。なお、各図における構成部材のそれぞれの厚みや長さなどは図面作成上の観点から、図示する構成に限定されるものではない。
図1は、本発明の実施形態1の発光装置の一構成例を示す図であって、(a)はその縦断面図、(b)はその上側から見たときの平面図であり、(c)はその裏面図である。
上記実施形態1では印刷抵抗16を全て露出するように、印刷抵抗16を絶縁性フィルム2の裏面に形成したが、本実施形態2では印刷抵抗16の両端部が他の導電膜で覆われて保護される場合について説明する。
本実施形態3では、デバイス折れ防止のために、±極性に対応した両導電領域の対向辺を平面視凹凸形状に形成した場合について説明する。
本実施形態4では、デバイス折れ防止のために、±極性に対応した両導電領域の対向辺が平面視L字・L字形状に形成した場合について説明する。
上記実施形態1〜4では、保護素子(印刷抵抗素子)が絶縁性フィルム2の裏面に設けられる場合について説明したが、本実施形態5では、保護素子(印刷抵抗素子)が絶縁性フィルム2の表面に設けられる場合について説明する。
上記実施形態1〜4では、保護素子(印刷抵抗素子)が絶縁性フィルム2の裏面に設けられる場合について説明し、上記実施形態5では、印刷抵抗素子が絶縁性フィルム2の表面に設けられる場合について説明し、本実施形態6では、発光素子11は、絶縁性フィルム2の表面側に形成された蛍光体含有樹脂層(または透光性樹脂層)により覆われ、保護素子(印刷抵抗素子)が、絶縁性フィルム2の表面側でかつ蛍光体含有樹脂層(または透光性樹脂層)の平面視外側に形成されている場合について説明する。
Claims (8)
- 絶縁性フィルム上に±極性に対応して設けられた両導電領域と、
前記両導電領域の表面側に搭載されて前記両導電領域に電気的に接続された発光素子と、
前記発光素子と並列に接続された保護素子と、
前記絶縁性フィルムの裏面に形成され、前記両導電領域に電気的に接続される1対の端子部とを有し、
前記両導電領域の対向辺に平面視で段差部が設けられた状態で、前記両導電領域は、互いに間隔を空けて絶縁され、
前記1対の端子部は、前記1対の端子部のうちの一方に前記両導電領域に対応する段差部が設けられていないことを除いて、前記両導電領域に対応する形状であり、
前記保護素子は、前記1対の端子部間に電気的に接続されており、
前記段差部は、平面視凹凸形状および、平面視L字・L字形状のうちの少なくともいずれかであり、
前記平面視凹凸形状は、前記両導電領域の対向辺が所定距離を開けて嵌合しており、
前記1対の端子部の他方の段差部が、高端辺と低端辺とを有し、
前記低端辺と前記1対の端子部の一方との間の距離は、前記高端辺と前記1対の端子部の一方との距離よりも長くなっており、
前記保護素子が、前記1対の端子部の一方と前記1対の端子部の他方の前記低端辺とを架け渡すように設けられて、前記1対の端子部を接続している、発光装置。 - 絶縁性フィルム上に±極性に対応して設けられた両導電領域と、
前記両導電領域の表面側に搭載されて前記両導電領域に電気的に接続された発光素子と、
前記発光素子と並列に接続された保護素子と、
前記絶縁性フィルムの裏面に形成され、前記両導電領域に電気的に接続される1対の端子部とを有し、
前記両導電領域の対向辺に平面視で段差部が設けられた状態で、前記両導電領域は、互いに間隔を空けて絶縁され、
前記1対の端子部は、前記1対の端子部のうちの一方に前記両導電領域に対応する段差部が設けられていないことを除いて、前記両導電領域に対応する形状であり、
前記保護素子は、前記1対の端子部間に電気的に接続されており、
前記段差部は、平面視凹凸形状および、平面視L字・L字形状のうちの少なくともいずれかであり、
前記平面視L字・L字形状は、前記両導電領域の対向辺が所定距離を開けて互いに入り込んでおり、
前記1対の端子部の他方の段差部が、高端辺と低端辺とを有し、
前記低端辺と前記1対の端子部の一方との間の距離は、前記高端辺と前記1対の端子部の一方との距離よりも長くなっており、
前記保護素子が、前記1対の端子部の一方と前記1対の端子部の他方の前記低端辺とを架け渡すように設けられて、前記1対の端子部を接続している、発光装置。 - 前記保護素子は、印刷抵抗または薄膜抵抗により構成されている請求項1または2に記載の発光装置。
- 前記保護素子は、前記絶縁性フィルム上に形成された接着材層上に形成されている請求項3に記載の発光装置。
- 前記発光素子は、前記絶縁性フィルムの表面側に形成された蛍光体含有樹脂層および透光性樹脂層の少なくともいずれかにより覆われ、前記保護素子は、前記絶縁性フィルムの表面側または裏面側でかつ前記蛍光体含有樹脂層および前記透光性樹脂層の少なくともいずれかの平面視外側に形成されている請求項3に記載の発光装置。
- 前記蛍光体含有樹脂層および前記透光性樹脂層の少なくともいずれかは、その表面がドーム状に形成されている請求項5に記載の発光装置。
- 前記印刷抵抗は、抵抗成分を含むペーストをスクリーン印刷することにより形成されている請求項3に記載の発光装置。
- 前記ペーストは、酸化ルテニウム、固結剤、樹脂および溶剤により構成されている請求項7に記載の発光装置。
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PCT/JP2013/002871 WO2013186978A1 (ja) | 2012-06-15 | 2013-04-26 | 発光装置 |
JP2014520879A JP6116560B2 (ja) | 2012-06-15 | 2013-04-26 | 発光装置 |
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US3810148A (en) * | 1972-07-06 | 1974-05-07 | Kewp Inc | Electronic line indicator apparatus |
JPH0770363B2 (ja) * | 1987-02-28 | 1995-07-31 | イビデン株式会社 | 印刷抵抗体付プリント配線板 |
JPH0525749A (ja) | 1991-07-10 | 1993-02-02 | Toyota Autom Loom Works Ltd | 織機におけるクロスロール交換装置の織布巻き付け機構 |
JPH0525749U (ja) * | 1991-09-10 | 1993-04-02 | 株式会社小糸製作所 | チツプ型発光ダイオードの取付構造 |
JP4724965B2 (ja) | 2001-07-10 | 2011-07-13 | ソニー株式会社 | フレキシブル配線基板 |
US20080179618A1 (en) * | 2007-01-26 | 2008-07-31 | Ching-Tai Cheng | Ceramic led package |
JP2009105198A (ja) | 2007-10-23 | 2009-05-14 | Sanyo Electric Co Ltd | プリント配線基板およびそれを備えた発光装置 |
KR100870950B1 (ko) * | 2007-11-19 | 2008-12-01 | 일진반도체 주식회사 | 발광다이오드 소자 및 그 제조 방법 |
JP5726409B2 (ja) * | 2009-07-01 | 2015-06-03 | シャープ株式会社 | 発光装置および発光装置の製造方法 |
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JP5756803B2 (ja) | 2010-07-23 | 2015-07-29 | シャープ株式会社 | 発光装置及びその製造方法 |
CN102054829A (zh) * | 2010-11-05 | 2011-05-11 | 深圳市华星光电技术有限公司 | 发光二极管封装构造 |
USRE47780E1 (en) * | 2011-04-20 | 2019-12-24 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting apparatus, backlight unit, liquid crystal display apparatus, and illumination apparatus |
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US9391242B2 (en) | 2016-07-12 |
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