JP6108936B2 - 撮像装置、撮像システム、撮像装置の駆動方法 - Google Patents

撮像装置、撮像システム、撮像装置の駆動方法 Download PDF

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Publication number
JP6108936B2
JP6108936B2 JP2013091427A JP2013091427A JP6108936B2 JP 6108936 B2 JP6108936 B2 JP 6108936B2 JP 2013091427 A JP2013091427 A JP 2013091427A JP 2013091427 A JP2013091427 A JP 2013091427A JP 6108936 B2 JP6108936 B2 JP 6108936B2
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signal
signal line
signal output
output unit
unit
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Japanese (ja)
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JP2014216769A (ja
JP2014216769A5 (enExample
Inventor
小林 大祐
大祐 小林
智也 大西
智也 大西
武 大屋
武 大屋
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Canon Inc
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Canon Inc
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Priority to JP2013091427A priority Critical patent/JP6108936B2/ja
Priority to US14/255,836 priority patent/US9967492B2/en
Publication of JP2014216769A publication Critical patent/JP2014216769A/ja
Publication of JP2014216769A5 publication Critical patent/JP2014216769A5/ja
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Publication of JP6108936B2 publication Critical patent/JP6108936B2/ja
Priority to US15/951,948 priority patent/US11095841B2/en
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2013091427A 2013-04-24 2013-04-24 撮像装置、撮像システム、撮像装置の駆動方法 Expired - Fee Related JP6108936B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013091427A JP6108936B2 (ja) 2013-04-24 2013-04-24 撮像装置、撮像システム、撮像装置の駆動方法
US14/255,836 US9967492B2 (en) 2013-04-24 2014-04-17 Imaging apparatus, imaging system, and driving method for imaging apparatus having signal lines extending in column direction
US15/951,948 US11095841B2 (en) 2013-04-24 2018-04-12 Imaging apparatus, imaging system, and driving method for imaging apparatus having capability of reducing deterioration of accuracy of A/D conversion

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013091427A JP6108936B2 (ja) 2013-04-24 2013-04-24 撮像装置、撮像システム、撮像装置の駆動方法

Related Child Applications (1)

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JP2017039654A Division JP6305589B2 (ja) 2017-03-02 2017-03-02 撮像装置、撮像システム、撮像装置の駆動方法

Publications (3)

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JP2014216769A JP2014216769A (ja) 2014-11-17
JP2014216769A5 JP2014216769A5 (enExample) 2016-06-16
JP6108936B2 true JP6108936B2 (ja) 2017-04-05

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US (2) US9967492B2 (enExample)
JP (1) JP6108936B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6108936B2 (ja) * 2013-04-24 2017-04-05 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
JP6613554B2 (ja) * 2014-09-30 2019-12-04 株式会社ニコン 画像処理装置およびプログラム
JP6733217B2 (ja) * 2016-02-29 2020-07-29 リコーイメージング株式会社 撮像装置
TWI633788B (zh) * 2017-06-30 2018-08-21 晶相光電股份有限公司 主動式畫素感測器
JP7039237B2 (ja) * 2017-09-29 2022-03-22 キヤノン株式会社 撮像装置、撮像システム、移動体、回路チップ
JP7280691B2 (ja) * 2018-11-27 2023-05-24 キヤノン株式会社 撮像素子およびその制御方法、及び撮像装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06232744A (ja) * 1993-01-29 1994-08-19 Canon Inc 信号処理装置
US5614744A (en) * 1995-08-04 1997-03-25 National Semiconductor Corporation CMOS-based, low leakage active pixel array with anti-blooming isolation
US6757018B1 (en) * 1998-12-18 2004-06-29 Agilent Technologies, Inc. CMOS image sensor with pixel level gain control
JP2003115584A (ja) * 2001-10-05 2003-04-18 Canon Inc 撮像装置及び読取装置
JP4040312B2 (ja) * 2002-01-28 2008-01-30 キヤノン株式会社 固体撮像素子及び撮像装置
DE60333757D1 (de) * 2003-11-04 2010-09-23 St Microelectronics Res & Dev Verbesserungen in oder in Bezug auf Bildsensoren
KR100690880B1 (ko) * 2004-12-16 2007-03-09 삼성전자주식회사 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법
JP4589131B2 (ja) * 2005-01-24 2010-12-01 株式会社フォトロン 画像センサおよびその画像読み出し方法
JP4935486B2 (ja) * 2007-04-23 2012-05-23 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、固体撮像装置の信号処理方法および撮像装置
JP4389981B2 (ja) * 2007-08-06 2009-12-24 ソニー株式会社 固体撮像装置、固体撮像装置のアナログ−デジタル変換方法および撮像装置
JP5319161B2 (ja) * 2008-05-21 2013-10-16 パナソニック株式会社 固体撮像装置
EP2348704A1 (en) * 2010-01-26 2011-07-27 Paul Scherrer Institut A single photon counting readout chip with neglibible dead time
JP6003291B2 (ja) * 2011-08-22 2016-10-05 ソニー株式会社 固体撮像装置及び電子機器
JP6108936B2 (ja) * 2013-04-24 2017-04-05 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法

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US9967492B2 (en) 2018-05-08
US11095841B2 (en) 2021-08-17
US20180234657A1 (en) 2018-08-16
JP2014216769A (ja) 2014-11-17
US20140320714A1 (en) 2014-10-30

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