JP6106168B2 - 薄膜デバイスを個別のセルに分割する方法及び装置 - Google Patents

薄膜デバイスを個別のセルに分割する方法及び装置 Download PDF

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Publication number
JP6106168B2
JP6106168B2 JP2014519618A JP2014519618A JP6106168B2 JP 6106168 B2 JP6106168 B2 JP 6106168B2 JP 2014519618 A JP2014519618 A JP 2014519618A JP 2014519618 A JP2014519618 A JP 2014519618A JP 6106168 B2 JP6106168 B2 JP 6106168B2
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layer
laser beam
processing head
laser
cutting portion
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JP2014524147A (ja
JP2014524147A5 (enExample
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アダム ノース ブラントン
アダム ノース ブラントン
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エム−ソルヴ・リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/86—Series electrical configurations of multiple OLEDs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)
  • Battery Electrode And Active Subsutance (AREA)
JP2014519618A 2011-07-15 2012-07-13 薄膜デバイスを個別のセルに分割する方法及び装置 Expired - Fee Related JP6106168B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1112286.8 2011-07-15
GB1112286.8A GB2492972B (en) 2011-07-15 2011-07-15 Method and apparatus for dividing a thin film device into separate cells
PCT/GB2012/000590 WO2013011254A1 (en) 2011-07-15 2012-07-13 Method and apparatus for dividing a thin film device into separate cells

Publications (3)

Publication Number Publication Date
JP2014524147A JP2014524147A (ja) 2014-09-18
JP2014524147A5 JP2014524147A5 (enExample) 2015-09-10
JP6106168B2 true JP6106168B2 (ja) 2017-03-29

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JP2014519618A Expired - Fee Related JP6106168B2 (ja) 2011-07-15 2012-07-13 薄膜デバイスを個別のセルに分割する方法及び装置

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Country Link
US (1) US9054177B2 (enExample)
EP (1) EP2732468B1 (enExample)
JP (1) JP6106168B2 (enExample)
KR (1) KR101880699B1 (enExample)
CN (1) CN103688358B (enExample)
GB (1) GB2492972B (enExample)
TW (1) TWI617385B (enExample)
WO (1) WO2013011254A1 (enExample)

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GB2492971B (en) * 2011-07-15 2013-09-18 M Solv Ltd Method and apparatus for dividing thin film device into separate cells
JP2015096823A (ja) 2013-11-15 2015-05-21 浜松ホトニクス株式会社 放射線検出器、及び放射線検出器の製造方法
EP2974822B1 (en) * 2014-07-14 2017-08-16 ASM Technology Singapore Pte Ltd. Method of dicing thin semiconductor substrates
KR101677152B1 (ko) * 2015-03-27 2016-11-17 (주)엔에스 단차 가공용 레이저 절단 장치
KR101677154B1 (ko) * 2015-04-22 2016-11-17 (주)엔에스 단차 가공용 레이저 절단 장치
KR101689860B1 (ko) * 2015-05-26 2016-12-26 (주)엔에스 단차 가공용 레이저 절단 장치
KR101702568B1 (ko) * 2015-07-28 2017-02-06 (주)엔에스 단차 가공용 레이저 절단 장치
KR102567316B1 (ko) * 2015-11-04 2023-08-16 엘지디스플레이 주식회사 디스플레이 제조장치
CN105562939A (zh) * 2016-03-03 2016-05-11 苏州大学 一种印刷电路板的多波长飞秒激光扫描刻蚀加工方法
CN108604618B (zh) * 2016-12-27 2022-12-06 中国建材国际工程集团有限公司 用于监视在太阳能模块中形成隔离槽的激光划片过程的方法和系统
GB2572608A (en) * 2018-04-03 2019-10-09 Ilika Tech Ltd Laser processing method for thin film structures
KR102319690B1 (ko) * 2020-05-12 2021-11-02 주식회사 이오테크닉스 홀 형성 장치 및 홀 형성 방법
KR102737376B1 (ko) * 2022-12-23 2024-12-03 주식회사 메카로에너지 패턴형 투광 태양전지 모듈 및 그 제조 방법
KR102756303B1 (ko) * 2023-11-30 2025-01-21 주식회사 바인딩 투과형 cigs 모듈을 제작하기 위한 방법 및 이에 따라 제작된 투과형 cigs 모듈

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Also Published As

Publication number Publication date
US9054177B2 (en) 2015-06-09
TWI617385B (zh) 2018-03-11
GB201112286D0 (en) 2011-08-31
JP2014524147A (ja) 2014-09-18
EP2732468B1 (en) 2018-12-19
CN103688358B (zh) 2017-07-04
GB2492972B (en) 2013-09-11
EP2732468A1 (en) 2014-05-21
KR101880699B1 (ko) 2018-07-20
GB2492972A (en) 2013-01-23
US20140162408A1 (en) 2014-06-12
TW201306983A (zh) 2013-02-16
WO2013011254A1 (en) 2013-01-24
KR20140054069A (ko) 2014-05-08
CN103688358A (zh) 2014-03-26

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