TWI617385B - 用於劃分薄膜裝置為分離的晶胞之方法和設備 - Google Patents
用於劃分薄膜裝置為分離的晶胞之方法和設備 Download PDFInfo
- Publication number
- TWI617385B TWI617385B TW101125253A TW101125253A TWI617385B TW I617385 B TWI617385 B TW I617385B TW 101125253 A TW101125253 A TW 101125253A TW 101125253 A TW101125253 A TW 101125253A TW I617385 B TWI617385 B TW I617385B
- Authority
- TW
- Taiwan
- Prior art keywords
- cut
- laser
- layer
- processing head
- laser beam
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 62
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000012545 processing Methods 0.000 claims abstract description 117
- 230000000149 penetrating effect Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 103
- 238000005520 cutting process Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 claims description 2
- 239000012811 non-conductive material Substances 0.000 claims 4
- 230000005855 radiation Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 198
- 239000000463 material Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 9
- 239000012530 fluid Substances 0.000 description 8
- 239000011248 coating agent Substances 0.000 description 7
- 239000011810 insulating material Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013077 scoring method Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241000791868 Selene orstedii Species 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- NCOPCFQNAZTAIV-UHFFFAOYSA-N cadmium indium Chemical compound [Cd].[In] NCOPCFQNAZTAIV-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/10—Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F19/33—Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/86—Series electrical configurations of multiple OLEDs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
- Battery Electrode And Active Subsutance (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??1112286.8 | 2011-07-15 | ||
| GB1112286.8A GB2492972B (en) | 2011-07-15 | 2011-07-15 | Method and apparatus for dividing a thin film device into separate cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201306983A TW201306983A (zh) | 2013-02-16 |
| TWI617385B true TWI617385B (zh) | 2018-03-11 |
Family
ID=44586748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101125253A TWI617385B (zh) | 2011-07-15 | 2012-07-13 | 用於劃分薄膜裝置為分離的晶胞之方法和設備 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9054177B2 (enExample) |
| EP (1) | EP2732468B1 (enExample) |
| JP (1) | JP6106168B2 (enExample) |
| KR (1) | KR101880699B1 (enExample) |
| CN (1) | CN103688358B (enExample) |
| GB (1) | GB2492972B (enExample) |
| TW (1) | TWI617385B (enExample) |
| WO (1) | WO2013011254A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2492971B (en) * | 2011-07-15 | 2013-09-18 | M Solv Ltd | Method and apparatus for dividing thin film device into separate cells |
| JP2015096823A (ja) | 2013-11-15 | 2015-05-21 | 浜松ホトニクス株式会社 | 放射線検出器、及び放射線検出器の製造方法 |
| EP2974822B1 (en) * | 2014-07-14 | 2017-08-16 | ASM Technology Singapore Pte Ltd. | Method of dicing thin semiconductor substrates |
| KR101677152B1 (ko) * | 2015-03-27 | 2016-11-17 | (주)엔에스 | 단차 가공용 레이저 절단 장치 |
| KR101677154B1 (ko) * | 2015-04-22 | 2016-11-17 | (주)엔에스 | 단차 가공용 레이저 절단 장치 |
| KR101689860B1 (ko) * | 2015-05-26 | 2016-12-26 | (주)엔에스 | 단차 가공용 레이저 절단 장치 |
| KR101702568B1 (ko) * | 2015-07-28 | 2017-02-06 | (주)엔에스 | 단차 가공용 레이저 절단 장치 |
| KR102567316B1 (ko) * | 2015-11-04 | 2023-08-16 | 엘지디스플레이 주식회사 | 디스플레이 제조장치 |
| CN105562939A (zh) * | 2016-03-03 | 2016-05-11 | 苏州大学 | 一种印刷电路板的多波长飞秒激光扫描刻蚀加工方法 |
| CN108604618B (zh) * | 2016-12-27 | 2022-12-06 | 中国建材国际工程集团有限公司 | 用于监视在太阳能模块中形成隔离槽的激光划片过程的方法和系统 |
| GB2572608A (en) * | 2018-04-03 | 2019-10-09 | Ilika Tech Ltd | Laser processing method for thin film structures |
| KR102319690B1 (ko) * | 2020-05-12 | 2021-11-02 | 주식회사 이오테크닉스 | 홀 형성 장치 및 홀 형성 방법 |
| KR102737376B1 (ko) * | 2022-12-23 | 2024-12-03 | 주식회사 메카로에너지 | 패턴형 투광 태양전지 모듈 및 그 제조 방법 |
| KR102756303B1 (ko) * | 2023-11-30 | 2025-01-21 | 주식회사 바인딩 | 투과형 cigs 모듈을 제작하기 위한 방법 및 이에 따라 제작된 투과형 cigs 모듈 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW347480B (en) * | 1994-10-18 | 1998-12-11 | Toshiba Co Ltd | Reflection type liquid crystal display device and method of manufacturing the same |
| TW548689B (en) * | 2001-01-25 | 2003-08-21 | Fujitsu Display Tech | Reflection type liquid crystal display device and manufacturing method thereof |
| JP2004330271A (ja) * | 2003-05-09 | 2004-11-25 | Kanegafuchi Chem Ind Co Ltd | 透光性薄膜太陽電池の作製方法 |
| US20090165840A1 (en) * | 2007-12-27 | 2009-07-02 | Sanyo Electric Co., Ltd. | Solar cell module and method of manufacturing the same |
| TWI333280B (enExample) * | 2006-05-19 | 2010-11-11 | Mikuni Electoron Co Ltd |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3604917A1 (de) * | 1986-02-17 | 1987-08-27 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen |
| JPS63192561A (ja) * | 1987-02-04 | 1988-08-09 | Nkk Corp | マルチ切断装置 |
| JP3248336B2 (ja) * | 1994-03-23 | 2002-01-21 | 富士電機株式会社 | 薄膜太陽電池の製造方法 |
| JPH08267265A (ja) * | 1995-03-30 | 1996-10-15 | Fuji Electric Corp Res & Dev Ltd | 薄膜加工装置 |
| DE19840936B4 (de) * | 1998-09-08 | 2005-03-10 | Hell Gravure Systems Gmbh | Anordnung zum mehrkanaligen Schneiden und Ritzen von Materialien mittels Laserstrahlen |
| JP4233741B2 (ja) * | 2000-09-27 | 2009-03-04 | 三菱重工業株式会社 | 太陽電池モジュール及びその製造方法 |
| JP4340246B2 (ja) * | 2005-03-07 | 2009-10-07 | シャープ株式会社 | 薄膜太陽電池およびその製造方法 |
| JP5088661B2 (ja) * | 2006-12-05 | 2012-12-05 | セイコーエプソン株式会社 | 半導体装置および電気光学装置 |
| WO2009027476A2 (en) * | 2007-08-30 | 2009-03-05 | Oc Oerlikon Balzers Ag | A thin-film solar cell system and method and apparatus for manufacturing a thin-film solar cell |
| GB2458986B (en) * | 2008-04-08 | 2012-05-30 | M Solv Ltd | Apparatus for patterning thin films on continuous flexible substrates |
| GB2474665B (en) | 2009-10-22 | 2011-10-12 | M Solv Ltd | Method and apparatus for dividing thin film device into separate cells |
| GB2492971B (en) | 2011-07-15 | 2013-09-18 | M Solv Ltd | Method and apparatus for dividing thin film device into separate cells |
-
2011
- 2011-07-15 GB GB1112286.8A patent/GB2492972B/en active Active
-
2012
- 2012-07-13 WO PCT/GB2012/000590 patent/WO2013011254A1/en not_active Ceased
- 2012-07-13 EP EP12751097.2A patent/EP2732468B1/en active Active
- 2012-07-13 TW TW101125253A patent/TWI617385B/zh not_active IP Right Cessation
- 2012-07-13 JP JP2014519618A patent/JP6106168B2/ja not_active Expired - Fee Related
- 2012-07-13 CN CN201280035236.8A patent/CN103688358B/zh active Active
- 2012-07-13 KR KR1020147003890A patent/KR101880699B1/ko not_active Expired - Fee Related
- 2012-07-13 US US14/131,830 patent/US9054177B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW347480B (en) * | 1994-10-18 | 1998-12-11 | Toshiba Co Ltd | Reflection type liquid crystal display device and method of manufacturing the same |
| TW548689B (en) * | 2001-01-25 | 2003-08-21 | Fujitsu Display Tech | Reflection type liquid crystal display device and manufacturing method thereof |
| JP2004330271A (ja) * | 2003-05-09 | 2004-11-25 | Kanegafuchi Chem Ind Co Ltd | 透光性薄膜太陽電池の作製方法 |
| TWI333280B (enExample) * | 2006-05-19 | 2010-11-11 | Mikuni Electoron Co Ltd | |
| US20090165840A1 (en) * | 2007-12-27 | 2009-07-02 | Sanyo Electric Co., Ltd. | Solar cell module and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US9054177B2 (en) | 2015-06-09 |
| GB201112286D0 (en) | 2011-08-31 |
| JP2014524147A (ja) | 2014-09-18 |
| EP2732468B1 (en) | 2018-12-19 |
| CN103688358B (zh) | 2017-07-04 |
| GB2492972B (en) | 2013-09-11 |
| JP6106168B2 (ja) | 2017-03-29 |
| EP2732468A1 (en) | 2014-05-21 |
| KR101880699B1 (ko) | 2018-07-20 |
| GB2492972A (en) | 2013-01-23 |
| US20140162408A1 (en) | 2014-06-12 |
| TW201306983A (zh) | 2013-02-16 |
| WO2013011254A1 (en) | 2013-01-24 |
| KR20140054069A (ko) | 2014-05-08 |
| CN103688358A (zh) | 2014-03-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |