TWI617385B - 用於劃分薄膜裝置為分離的晶胞之方法和設備 - Google Patents

用於劃分薄膜裝置為分離的晶胞之方法和設備 Download PDF

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Publication number
TWI617385B
TWI617385B TW101125253A TW101125253A TWI617385B TW I617385 B TWI617385 B TW I617385B TW 101125253 A TW101125253 A TW 101125253A TW 101125253 A TW101125253 A TW 101125253A TW I617385 B TWI617385 B TW I617385B
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Taiwan
Prior art keywords
cut
laser
layer
processing head
laser beam
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TW101125253A
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English (en)
Chinese (zh)
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TW201306983A (zh
Inventor
亞登 諾師 布登
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M Solv有限公司
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Publication of TW201306983A publication Critical patent/TW201306983A/zh
Application granted granted Critical
Publication of TWI617385B publication Critical patent/TWI617385B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/10Devices involving relative movement between laser beam and workpiece using a fixed support, i.e. involving moving the laser beam
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • B23K26/364Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/40Removing material taking account of the properties of the material involved
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/86Series electrical configurations of multiple OLEDs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00Materials to be soldered, welded or cut
    • B23K2103/50Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)
  • Battery Electrode And Active Subsutance (AREA)
TW101125253A 2011-07-15 2012-07-13 用於劃分薄膜裝置為分離的晶胞之方法和設備 TWI617385B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
??1112286.8 2011-07-15
GB1112286.8A GB2492972B (en) 2011-07-15 2011-07-15 Method and apparatus for dividing a thin film device into separate cells

Publications (2)

Publication Number Publication Date
TW201306983A TW201306983A (zh) 2013-02-16
TWI617385B true TWI617385B (zh) 2018-03-11

Family

ID=44586748

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101125253A TWI617385B (zh) 2011-07-15 2012-07-13 用於劃分薄膜裝置為分離的晶胞之方法和設備

Country Status (8)

Country Link
US (1) US9054177B2 (enExample)
EP (1) EP2732468B1 (enExample)
JP (1) JP6106168B2 (enExample)
KR (1) KR101880699B1 (enExample)
CN (1) CN103688358B (enExample)
GB (1) GB2492972B (enExample)
TW (1) TWI617385B (enExample)
WO (1) WO2013011254A1 (enExample)

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GB2492971B (en) * 2011-07-15 2013-09-18 M Solv Ltd Method and apparatus for dividing thin film device into separate cells
JP2015096823A (ja) 2013-11-15 2015-05-21 浜松ホトニクス株式会社 放射線検出器、及び放射線検出器の製造方法
EP2974822B1 (en) * 2014-07-14 2017-08-16 ASM Technology Singapore Pte Ltd. Method of dicing thin semiconductor substrates
KR101677152B1 (ko) * 2015-03-27 2016-11-17 (주)엔에스 단차 가공용 레이저 절단 장치
KR101677154B1 (ko) * 2015-04-22 2016-11-17 (주)엔에스 단차 가공용 레이저 절단 장치
KR101689860B1 (ko) * 2015-05-26 2016-12-26 (주)엔에스 단차 가공용 레이저 절단 장치
KR101702568B1 (ko) * 2015-07-28 2017-02-06 (주)엔에스 단차 가공용 레이저 절단 장치
KR102567316B1 (ko) * 2015-11-04 2023-08-16 엘지디스플레이 주식회사 디스플레이 제조장치
CN105562939A (zh) * 2016-03-03 2016-05-11 苏州大学 一种印刷电路板的多波长飞秒激光扫描刻蚀加工方法
CN108604618B (zh) * 2016-12-27 2022-12-06 中国建材国际工程集团有限公司 用于监视在太阳能模块中形成隔离槽的激光划片过程的方法和系统
GB2572608A (en) * 2018-04-03 2019-10-09 Ilika Tech Ltd Laser processing method for thin film structures
KR102319690B1 (ko) * 2020-05-12 2021-11-02 주식회사 이오테크닉스 홀 형성 장치 및 홀 형성 방법
KR102737376B1 (ko) * 2022-12-23 2024-12-03 주식회사 메카로에너지 패턴형 투광 태양전지 모듈 및 그 제조 방법
KR102756303B1 (ko) * 2023-11-30 2025-01-21 주식회사 바인딩 투과형 cigs 모듈을 제작하기 위한 방법 및 이에 따라 제작된 투과형 cigs 모듈

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TW347480B (en) * 1994-10-18 1998-12-11 Toshiba Co Ltd Reflection type liquid crystal display device and method of manufacturing the same
TW548689B (en) * 2001-01-25 2003-08-21 Fujitsu Display Tech Reflection type liquid crystal display device and manufacturing method thereof
JP2004330271A (ja) * 2003-05-09 2004-11-25 Kanegafuchi Chem Ind Co Ltd 透光性薄膜太陽電池の作製方法
US20090165840A1 (en) * 2007-12-27 2009-07-02 Sanyo Electric Co., Ltd. Solar cell module and method of manufacturing the same
TWI333280B (enExample) * 2006-05-19 2010-11-11 Mikuni Electoron Co Ltd

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Publication number Priority date Publication date Assignee Title
TW347480B (en) * 1994-10-18 1998-12-11 Toshiba Co Ltd Reflection type liquid crystal display device and method of manufacturing the same
TW548689B (en) * 2001-01-25 2003-08-21 Fujitsu Display Tech Reflection type liquid crystal display device and manufacturing method thereof
JP2004330271A (ja) * 2003-05-09 2004-11-25 Kanegafuchi Chem Ind Co Ltd 透光性薄膜太陽電池の作製方法
TWI333280B (enExample) * 2006-05-19 2010-11-11 Mikuni Electoron Co Ltd
US20090165840A1 (en) * 2007-12-27 2009-07-02 Sanyo Electric Co., Ltd. Solar cell module and method of manufacturing the same

Also Published As

Publication number Publication date
US9054177B2 (en) 2015-06-09
GB201112286D0 (en) 2011-08-31
JP2014524147A (ja) 2014-09-18
EP2732468B1 (en) 2018-12-19
CN103688358B (zh) 2017-07-04
GB2492972B (en) 2013-09-11
JP6106168B2 (ja) 2017-03-29
EP2732468A1 (en) 2014-05-21
KR101880699B1 (ko) 2018-07-20
GB2492972A (en) 2013-01-23
US20140162408A1 (en) 2014-06-12
TW201306983A (zh) 2013-02-16
WO2013011254A1 (en) 2013-01-24
KR20140054069A (ko) 2014-05-08
CN103688358A (zh) 2014-03-26

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