JP6105367B2 - 荷電粒子ビーム描画方法 - Google Patents
荷電粒子ビーム描画方法 Download PDFInfo
- Publication number
- JP6105367B2 JP6105367B2 JP2013091143A JP2013091143A JP6105367B2 JP 6105367 B2 JP6105367 B2 JP 6105367B2 JP 2013091143 A JP2013091143 A JP 2013091143A JP 2013091143 A JP2013091143 A JP 2013091143A JP 6105367 B2 JP6105367 B2 JP 6105367B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- ground
- cover
- mask substrate
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002245 particle Substances 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 description 102
- 238000010894 electron beam technology Methods 0.000 description 58
- 230000007246 mechanism Effects 0.000 description 37
- 238000012546 transfer Methods 0.000 description 16
- 238000007493 shaping process Methods 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 239000004020 conductor Substances 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 239000000696 magnetic material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910017090 AlO 2 Inorganic materials 0.000 description 1
- 229910000883 Ti6Al4V Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31777—Lithography by projection
- H01J2237/31788—Lithography by projection through mask
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
11・・・枠体
12・・・アース機構
13・・・カバー部
13a・・・開口部
14・・・アースプレート
14b・・・支持ピン
14c・・・接点
15・・・アースピン
17・・・隙間
20・・・マスク基板
21・・・ガラス基板
22・・・遮光膜
23・・・レジスト膜
30・・・電子ビーム描画装置
31・・・描画チャンバ
32・・・搬入出部
32a・・・載置部
32b・・・大気搬送ロボット
33・・・ロードロックチャンバ
34・・・アライメントチャンバ
35・・・マスクカバー収納チャンバ
36・・・真空ロボットチャンバ
36a・・・真空搬送ロボット
41・・・描画室
42・・・ステージ
42a・・・ピン
42b・・・板ばね
42c・・・支持体
43・・・電子ビーム
44・・・電子光学鏡筒
45・・・電子ビーム発生部
45a・・・電子銃
46・・・電子ビーム成形部
46a・・・第1のアパーチャ
46b・・・第2のアパーチャ
46c・・・照明レンズ
46d・・・成形偏向器
46e・・・投影レンズ
47・・・電子ビーム偏向部
47a・・・主対物偏向器
47b・・・副対物偏向器
47c・・・対物レンズ
Claims (1)
- 中央部に開口を有する枠体と、端部が前記枠体の前記開口の内側に突出するように前記枠体にそれぞれ離間して設置された導電性の複数のアースプレートと、複数の前記アースプレートのそれぞれの前記端部に設けられ、複数の前記アースプレートとそれぞれ電気的に接続される複数のアースピンと、複数の前記アースピンの先端がそれぞれ突出し、かつ複数の前記アースピンとの間にそれぞれ隙間を有するように複数の前記アースピンをそれぞれ囲う複数の導電性のカバー部と、を有するマスクカバーを、遮光膜上にレジスト膜が形成された試料に対して、傾いた状態で上方から降下させ、前記複数のアースピンが前記試料の前記遮光膜に対して順に接するように、前記マスクカバーを前記試料に載置し、
複数の前記アースプレートを接地させて、前記試料上に荷電粒子ビームを照射することを特徴とする荷電粒子ビーム描画方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013091143A JP6105367B2 (ja) | 2013-04-24 | 2013-04-24 | 荷電粒子ビーム描画方法 |
KR1020140046164A KR101540990B1 (ko) | 2013-04-24 | 2014-04-17 | 마스크 커버용 어스 기구, 마스크 커버, 하전 입자 빔 묘화 장치 및 하전 입자 빔 묘화 방법 |
TW103114104A TWI540381B (zh) | 2013-04-24 | 2014-04-18 | 遮罩蓋體用接地機構、遮罩蓋體、帶電粒子束描繪裝置以及帶電粒子束描繪方法 |
US14/257,641 US9299531B2 (en) | 2013-04-24 | 2014-04-21 | Mask cover, charged particle beam drawing apparatus and charged particle beam drawing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013091143A JP6105367B2 (ja) | 2013-04-24 | 2013-04-24 | 荷電粒子ビーム描画方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014216407A JP2014216407A (ja) | 2014-11-17 |
JP6105367B2 true JP6105367B2 (ja) | 2017-03-29 |
Family
ID=51788476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013091143A Active JP6105367B2 (ja) | 2013-04-24 | 2013-04-24 | 荷電粒子ビーム描画方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9299531B2 (ja) |
JP (1) | JP6105367B2 (ja) |
KR (1) | KR101540990B1 (ja) |
TW (1) | TWI540381B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6219747B2 (ja) * | 2014-02-25 | 2017-10-25 | 日本電子株式会社 | 荷電粒子線描画装置 |
JP6349944B2 (ja) * | 2014-05-13 | 2018-07-04 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置及び電子ビーム描画方法 |
EP3125041B1 (en) | 2015-07-27 | 2020-08-19 | Shin-Etsu Chemical Co., Ltd. | Method for preparing a photomask |
JP6564734B2 (ja) | 2015-07-27 | 2019-08-21 | 信越化学工業株式会社 | フォトマスクブランク及びフォトマスクの製造方法 |
JP6341166B2 (ja) | 2015-09-03 | 2018-06-13 | 信越化学工業株式会社 | フォトマスクブランク |
JP6451561B2 (ja) | 2015-09-03 | 2019-01-16 | 信越化学工業株式会社 | フォトマスクブランク |
JP7034867B2 (ja) * | 2018-08-31 | 2022-03-14 | 株式会社ニューフレアテクノロジー | 異常判定方法および描画装置 |
WO2021083773A1 (en) * | 2019-10-28 | 2021-05-06 | Asml Netherlands B.V. | System for inspecting and grounding a mask in a charged particle system |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2753865B2 (ja) * | 1989-07-27 | 1998-05-20 | 京セラ株式会社 | 描画装置用導電性基体 |
US5452177A (en) * | 1990-06-08 | 1995-09-19 | Varian Associates, Inc. | Electrostatic wafer clamp |
JPH04280415A (ja) * | 1991-03-08 | 1992-10-06 | Hitachi Ltd | 電子ビーム描画装置 |
JPH04356912A (ja) * | 1991-06-03 | 1992-12-10 | Fujitsu Ltd | 基板ホルダ |
JPH1092715A (ja) * | 1996-09-11 | 1998-04-10 | Hitachi Ltd | 静電吸着装置およびそれを用いた電子線描画装置 |
US20020047093A1 (en) * | 2000-10-24 | 2002-04-25 | Ki-Jung Son | Method of capturing scanning electron microscope images and scanning electron microscope apparatus for performing the method |
JP2005032963A (ja) | 2003-07-11 | 2005-02-03 | Toshiba Mach Co Ltd | 電子ビーム露光装置 |
JP4802025B2 (ja) * | 2006-03-29 | 2011-10-26 | 株式会社ニューフレアテクノロジー | 基板のアース機構及び荷電粒子ビーム描画装置 |
JP2007266362A (ja) | 2006-03-29 | 2007-10-11 | Nuflare Technology Inc | 基板のアース機構及び荷電粒子ビーム描画装置 |
JP2008058809A (ja) * | 2006-09-01 | 2008-03-13 | Nuflare Technology Inc | 基板カバー、荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
JP5129626B2 (ja) * | 2008-03-24 | 2013-01-30 | 株式会社ニューフレアテクノロジー | 電子ビーム描画装置および電子ビーム描画方法 |
JP2010074059A (ja) * | 2008-09-22 | 2010-04-02 | Nuflare Technology Inc | アースピン、アースプレート、荷電粒子ビーム描画装置および荷電粒子ビーム描画方法 |
US8094428B2 (en) * | 2008-10-27 | 2012-01-10 | Hermes-Microvision, Inc. | Wafer grounding methodology |
JP2011014630A (ja) * | 2009-06-30 | 2011-01-20 | Nuflare Technology Inc | 基板カバー着脱機構、基板カバー着脱方法および描画装置 |
JP4874384B2 (ja) * | 2009-12-25 | 2012-02-15 | 株式会社ニューフレアテクノロジー | 基板カバーおよびそれを用いた荷電粒子ビーム描画方法 |
JP5859263B2 (ja) * | 2011-09-29 | 2016-02-10 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法 |
-
2013
- 2013-04-24 JP JP2013091143A patent/JP6105367B2/ja active Active
-
2014
- 2014-04-17 KR KR1020140046164A patent/KR101540990B1/ko active IP Right Grant
- 2014-04-18 TW TW103114104A patent/TWI540381B/zh active
- 2014-04-21 US US14/257,641 patent/US9299531B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW201443553A (zh) | 2014-11-16 |
US9299531B2 (en) | 2016-03-29 |
KR101540990B1 (ko) | 2015-07-31 |
US20140319372A1 (en) | 2014-10-30 |
TWI540381B (zh) | 2016-07-01 |
JP2014216407A (ja) | 2014-11-17 |
KR20140127158A (ko) | 2014-11-03 |
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