JP6100734B2 - アザ−ポリシラン前駆体、及びそれを含む膜の堆積方法 - Google Patents

アザ−ポリシラン前駆体、及びそれを含む膜の堆積方法 Download PDF

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JP6100734B2
JP6100734B2 JP2014130276A JP2014130276A JP6100734B2 JP 6100734 B2 JP6100734 B2 JP 6100734B2 JP 2014130276 A JP2014130276 A JP 2014130276A JP 2014130276 A JP2014130276 A JP 2014130276A JP 6100734 B2 JP6100734 B2 JP 6100734B2
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group
branched
film
silicon
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JP2015015465A (ja
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マンチャオ　シャオ
シャオ マンチャオ
レイ シンジャン
レイ シンジャン
ピー．スペンス ダニエル
ピー．スペンス ダニエル
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Air Products and Chemicals Inc
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    • C07—ORGANIC CHEMISTRY
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/21—Cyclic compounds having at least one ring containing silicon, but no carbon in the ring
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
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    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)
JP2014130276A 2013-06-26 2014-06-25 アザ−ポリシラン前駆体、及びそれを含む膜の堆積方法 Active JP6100734B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361839536P 2013-06-26 2013-06-26
US61/839,536 2013-06-26
US14/293,554 2014-06-02
US14/293,554 US9796739B2 (en) 2013-06-26 2014-06-02 AZA-polysilane precursors and methods for depositing films comprising same

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JP2015015465A JP2015015465A (ja) 2015-01-22
JP6100734B2 true JP6100734B2 (ja) 2017-03-22

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US (1) US9796739B2 (zh)
EP (1) EP2818474B1 (zh)
JP (1) JP6100734B2 (zh)
KR (1) KR101651955B1 (zh)
CN (1) CN104250258B (zh)
TW (2) TWI636987B (zh)

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US10453675B2 (en) * 2013-09-20 2019-10-22 Versum Materials Us, Llc Organoaminosilane precursors and methods for depositing films comprising same
KR102326396B1 (ko) * 2013-09-27 2021-11-12 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 아민 치환된 트리실릴아민 및 트리디실릴아민 화합물
US9905415B2 (en) * 2013-10-03 2018-02-27 Versum Materials Us, Llc Methods for depositing silicon nitride films
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US10354860B2 (en) * 2015-01-29 2019-07-16 Versum Materials Us, Llc Method and precursors for manufacturing 3D devices
JP6501560B2 (ja) * 2015-03-06 2019-04-17 東京エレクトロン株式会社 シリコン窒化物膜の成膜方法および成膜装置
TWI716333B (zh) * 2015-03-30 2021-01-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
JP6086942B2 (ja) * 2015-06-10 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
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TWI753794B (zh) 2016-03-23 2022-01-21 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 形成含矽膜之組成物及其製法與用途
JP2020502360A (ja) * 2016-10-25 2020-01-23 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ケイ素含有薄膜の生成方法
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