JP6099970B2 - 露光装置及びデバイスの製造方法 - Google Patents

露光装置及びデバイスの製造方法 Download PDF

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Publication number
JP6099970B2
JP6099970B2 JP2012284352A JP2012284352A JP6099970B2 JP 6099970 B2 JP6099970 B2 JP 6099970B2 JP 2012284352 A JP2012284352 A JP 2012284352A JP 2012284352 A JP2012284352 A JP 2012284352A JP 6099970 B2 JP6099970 B2 JP 6099970B2
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Japan
Prior art keywords
substrate
oxygen concentration
exposure
illuminance
optical system
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JP2012284352A
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English (en)
Japanese (ja)
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JP2014127620A (ja
JP2014127620A5 (enExample
Inventor
佐々木　亮
亮 佐々木
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2012284352A priority Critical patent/JP6099970B2/ja
Priority to US14/138,559 priority patent/US9280050B2/en
Priority to KR1020130164484A priority patent/KR101698236B1/ko
Publication of JP2014127620A publication Critical patent/JP2014127620A/ja
Publication of JP2014127620A5 publication Critical patent/JP2014127620A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012284352A 2012-12-27 2012-12-27 露光装置及びデバイスの製造方法 Active JP6099970B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012284352A JP6099970B2 (ja) 2012-12-27 2012-12-27 露光装置及びデバイスの製造方法
US14/138,559 US9280050B2 (en) 2012-12-27 2013-12-23 Exposure apparatus and method of device fabrication
KR1020130164484A KR101698236B1 (ko) 2012-12-27 2013-12-26 노광 장치 및 디바이스의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012284352A JP6099970B2 (ja) 2012-12-27 2012-12-27 露光装置及びデバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2014127620A JP2014127620A (ja) 2014-07-07
JP2014127620A5 JP2014127620A5 (enExample) 2016-02-25
JP6099970B2 true JP6099970B2 (ja) 2017-03-22

Family

ID=51017561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012284352A Active JP6099970B2 (ja) 2012-12-27 2012-12-27 露光装置及びデバイスの製造方法

Country Status (3)

Country Link
US (1) US9280050B2 (enExample)
JP (1) JP6099970B2 (enExample)
KR (1) KR101698236B1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6343326B2 (ja) * 2016-11-18 2018-06-13 キヤノン株式会社 露光装置、および物品の製造方法
JP6985803B2 (ja) * 2017-03-01 2021-12-22 株式会社Ｓｃｒｅｅｎホールディングス 露光装置、基板処理装置、基板の露光方法および基板処理方法
JP7152876B2 (ja) * 2018-05-17 2022-10-13 キヤノン株式会社 露光装置及び物品の製造方法
JP7278836B2 (ja) * 2019-03-29 2023-05-22 キヤノン株式会社 露光装置、露光方法、および物品の製造方法
KR102829107B1 (ko) 2019-05-02 2025-07-07 삼성전자주식회사 Euv 노광 장치 및 그를 이용한 반도체 소자의 제조 방법
US11860555B2 (en) * 2021-03-30 2024-01-02 Changxin Memory Technologies, Inc. Alignment mark count acquiring method and device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719058B2 (ja) 1984-08-21 1995-03-06 ソニー株式会社 パタ−ン形成方法及び露光装置
JPS61213814A (ja) * 1985-03-20 1986-09-22 Hitachi Ltd 投影露光装置
JPH01195445A (ja) 1988-01-29 1989-08-07 Matsushita Electric Ind Co Ltd レジストの露光方法
JP4011643B2 (ja) * 1996-01-05 2007-11-21 キヤノン株式会社 半導体製造装置
AU6853598A (en) * 1997-04-18 1998-11-13 Nikon Corporation Aligner, exposure method using the aligner, and method of manufacture of circuitdevice
JPH1187230A (ja) * 1997-09-01 1999-03-30 Canon Inc 露光装置およびデバイス製造方法
JPH11354409A (ja) * 1998-06-09 1999-12-24 Canon Inc 照明装置、これを備えた投影露光装置、及び半導体装置の製造方法
US6690450B2 (en) * 2000-01-31 2004-02-10 Nikon Corporation Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device
JP2003257822A (ja) * 2002-02-28 2003-09-12 Nikon Corp 光学装置及び露光装置
WO2004021418A1 (ja) 2002-08-29 2004-03-11 Nikon Corporation 温度制御方法及び装置、並びに露光方法及び装置
US20050175497A1 (en) * 2002-08-29 2005-08-11 Nikon Corporation Temperature control method and apparatus and exposure method and apparatus
JP2004281854A (ja) * 2003-03-18 2004-10-07 Canon Inc 露光装置
JP2005142185A (ja) * 2003-11-04 2005-06-02 Canon Inc 露光装置及びその環境制御方法
JP5448724B2 (ja) * 2009-10-29 2014-03-19 キヤノン株式会社 露光装置及びデバイスの製造方法
JP5936328B2 (ja) * 2010-10-22 2016-06-22 キヤノン株式会社 露光装置およびデバイス製造方法
JP6099969B2 (ja) 2012-12-27 2017-03-22 キヤノン株式会社 露光装置及びデバイスの製造方法

Also Published As

Publication number Publication date
JP2014127620A (ja) 2014-07-07
KR20140085355A (ko) 2014-07-07
KR101698236B1 (ko) 2017-01-19
US9280050B2 (en) 2016-03-08
US20140186755A1 (en) 2014-07-03

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