JP6093363B2 - Ｈｉｐｉｍｓを用いた基材のコーティング - Google Patents
Ｈｉｐｉｍｓを用いた基材のコーティング Download PDFInfo
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- JP6093363B2 JP6093363B2 JP2014532353A JP2014532353A JP6093363B2 JP 6093363 B2 JP6093363 B2 JP 6093363B2 JP 2014532353 A JP2014532353 A JP 2014532353A JP 2014532353 A JP2014532353 A JP 2014532353A JP 6093363 B2 JP6093363 B2 JP 6093363B2
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- pulse
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- 238000000168 high power impulse magnetron sputter deposition Methods 0.000 title claims description 118
- 239000000758 substrate Substances 0.000 title claims description 70
- 238000000576 coating method Methods 0.000 title claims description 64
- 239000011248 coating agent Substances 0.000 title claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 62
- 239000010936 titanium Substances 0.000 claims description 52
- 239000000203 mixture Substances 0.000 claims description 47
- 229910021645 metal ion Inorganic materials 0.000 claims description 36
- 229910052782 aluminium Inorganic materials 0.000 claims description 28
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 238000005477 sputtering target Methods 0.000 claims description 22
- 229910052719 titanium Inorganic materials 0.000 claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 239000007789 gas Substances 0.000 claims description 21
- 230000001360 synchronised effect Effects 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 14
- 230000004907 flux Effects 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 10
- 238000003483 aging Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 150000002739 metals Chemical class 0.000 claims description 7
- 238000011282 treatment Methods 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 239000002923 metal particle Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 45
- 150000002500 ions Chemical class 0.000 description 32
- 239000011247 coating layer Substances 0.000 description 29
- 239000010410 layer Substances 0.000 description 21
- 230000000052 comparative effect Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 238000002441 X-ray diffraction Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000003917 TEM image Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000001330 spinodal decomposition reaction Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 229910004349 Ti-Al Inorganic materials 0.000 description 3
- 229910010037 TiAlN Inorganic materials 0.000 description 3
- 229910004692 Ti—Al Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 238000010849 ion bombardment Methods 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910018509 Al—N Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910019590 Cr-N Inorganic materials 0.000 description 2
- 229910019588 Cr—N Inorganic materials 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000541 cathodic arc deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000002003 electron diffraction Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 titanium ions Chemical class 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- NQTSTBMCCAVWOS-UHFFFAOYSA-N 1-dimethoxyphosphoryl-3-phenoxypropan-2-one Chemical compound COP(=O)(OC)CC(=O)COC1=CC=CC=C1 NQTSTBMCCAVWOS-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000997 High-speed steel Inorganic materials 0.000 description 1
- 229910001199 N alloy Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910007880 ZrAl Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000002051 biphasic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000013532 laser treatment Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000000101 transmission high energy electron diffraction Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP11183582 | 2011-09-30 | ||
| EP11183582.3 | 2011-09-30 | ||
| EP12157769 | 2012-03-01 | ||
| EP12157769.6 | 2012-03-01 | ||
| PCT/EP2012/068887 WO2013045454A2 (en) | 2011-09-30 | 2012-09-25 | Coating of substrates using hipims |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015501371A JP2015501371A (ja) | 2015-01-15 |
| JP2015501371A5 JP2015501371A5 (cg-RX-API-DMAC7.html) | 2015-11-05 |
| JP6093363B2 true JP6093363B2 (ja) | 2017-03-08 |
Family
ID=47010536
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014532353A Active JP6093363B2 (ja) | 2011-09-30 | 2012-09-25 | Ｈｉｐｉｍｓを用いた基材のコーティング |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9416440B2 (cg-RX-API-DMAC7.html) |
| EP (1) | EP2761050B1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6093363B2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2013045454A2 (cg-RX-API-DMAC7.html) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5892336B2 (ja) * | 2012-08-31 | 2016-03-23 | 三菱マテリアル株式会社 | 熱伝導性と潤滑特性にすぐれた表面被覆ドリル |
| JP6206133B2 (ja) * | 2012-11-30 | 2017-10-04 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
| EP2784799B1 (en) * | 2013-03-28 | 2022-12-21 | CemeCon AG | Dense, hard coatings on substrates using HIPIMS |
| WO2015120893A1 (en) | 2014-02-13 | 2015-08-20 | Mimsi Materials Ab | Method of coating a substrate so as to provide a controlled in-plane compositional modulation |
| EP3149104A4 (en) * | 2014-05-30 | 2018-02-21 | Services Pétroliers Schlumberger | Degradable powder blend |
| US10008667B2 (en) * | 2014-08-29 | 2018-06-26 | Intel Corporation | Materials and components in phase change memory devices |
| FR3025929B1 (fr) * | 2014-09-17 | 2016-10-21 | Commissariat Energie Atomique | Gaines de combustible nucleaire, procedes de fabrication et utilisation contre l'oxydation. |
| US11049702B2 (en) | 2015-04-27 | 2021-06-29 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
| US9812305B2 (en) | 2015-04-27 | 2017-11-07 | Advanced Energy Industries, Inc. | Rate enhanced pulsed DC sputtering system |
| US10689748B2 (en) * | 2015-07-15 | 2020-06-23 | Sumitomo Electric Industries, Ltd. | Coating |
| US10373811B2 (en) | 2015-07-24 | 2019-08-06 | Aes Global Holdings, Pte. Ltd | Systems and methods for single magnetron sputtering |
| JP6519795B2 (ja) * | 2015-09-30 | 2019-05-29 | 三菱マテリアル株式会社 | 耐チッピング性、耐摩耗性にすぐれた表面被覆切削工具 |
| GB201517879D0 (en) * | 2015-10-09 | 2015-11-25 | Spts Technologies Ltd | Method of deposition |
| US11440102B2 (en) * | 2015-12-22 | 2022-09-13 | Sandvik Intellectual Property Ab | Coated cutting tool and method |
| RU2730312C2 (ru) * | 2015-12-22 | 2020-08-21 | Сандвик Интеллекчуал Проперти Аб | Способ изготовления pvd-слоя и режущий инструмент с покрытием |
| US9994958B2 (en) * | 2016-01-20 | 2018-06-12 | Sumitomo Electric Hardmetal Corp. | Coating, cutting tool, and method of manufacturing coating |
| CN110023530B (zh) | 2016-12-28 | 2021-06-15 | 住友电气工业株式会社 | 被膜 |
| EP3676422B1 (en) * | 2017-08-31 | 2023-10-18 | Walter AG | Wear resistant pvd tool coating containing tialn nanolayer films |
| KR102064172B1 (ko) * | 2017-09-01 | 2020-01-09 | 한국야금 주식회사 | 내마모성과 인성이 우수한 경질피막 |
| EP3625377A1 (en) | 2017-09-05 | 2020-03-25 | Oerlikon Surface Solutions AG, Pfäffikon | Al-rich aitin-based films |
| JP6476261B1 (ja) * | 2017-10-17 | 2019-02-27 | 株式会社神戸製鋼所 | 成膜方法 |
| JP7072053B2 (ja) * | 2018-04-11 | 2022-05-19 | 住友電気工業株式会社 | 被膜 |
| US11821073B2 (en) | 2018-10-26 | 2023-11-21 | Oerlikon Surface Solutions Ag, Pfäffikon | Vanadium aluminium nitride (VAlN) micro alloyed with Ti and/or Si |
| JP7217866B2 (ja) * | 2019-03-19 | 2023-02-06 | 三菱マテリアル株式会社 | 表面被覆切削工具 |
| EP3736358A1 (en) * | 2019-05-08 | 2020-11-11 | Walter Ag | A coated cutting tool |
| KR20220038113A (ko) * | 2019-07-25 | 2022-03-25 | 어드밴스드 에너지 인더스트리즈 인코포레이티드 | 펄스형 dc 스퍼터링 시스템들 및 방법들 |
| DE102019124616A1 (de) * | 2019-09-12 | 2021-03-18 | Cemecon Ag | Mehrlagige Beschichtung |
| EP3839098A1 (en) * | 2019-12-20 | 2021-06-23 | Walter Ag | A coated cutting tool |
| WO2021187077A1 (ja) * | 2020-03-19 | 2021-09-23 | 日東電工株式会社 | 窒化物積層体、及び窒化物積層体の製造方法 |
| DE102020116157A1 (de) * | 2020-06-18 | 2021-12-23 | Cemecon Ag. | Verfahren und Vorrichtung zum Aufbringen einer Beschichtung sowie beschichteter Körper |
| CN111962034B (zh) * | 2020-08-14 | 2022-11-01 | 深圳后浪电子信息材料有限公司 | 一种覆铜板及其高速真空制备方法 |
| DE102020124032A1 (de) * | 2020-09-15 | 2022-03-17 | Cemecon Ag. | Beschichtungsvorrichtung und Beschichtungsverfahren mit unterteilten Pulsen |
| US12476090B2 (en) * | 2021-12-09 | 2025-11-18 | Ulvac, Inc. | Method of depositing silicon nitride film, apparatus for depositing film, and silicon nitride film |
| US11724317B1 (en) | 2022-03-10 | 2023-08-15 | Kennametal Inc. | Cubic phase refractory coatings and applications thereof |
| CN115029664A (zh) * | 2022-07-13 | 2022-09-09 | 海南大学 | 一种具有广谱抗菌性光热薄膜材料的制备方法 |
| CN116657104B (zh) * | 2023-05-31 | 2025-11-21 | 中国科学院宁波材料技术与工程研究所 | (110)面择优取向的max相涂层及制备方法与应用 |
| EP4471821A1 (de) * | 2023-06-02 | 2024-12-04 | Melec Gmbh | Verfahren zum magnetronsputtern |
| CN117448758A (zh) * | 2023-09-19 | 2024-01-26 | 中国科学院宁波材料技术与工程研究所 | 非晶碳涂层的磁控溅射方法 |
| CN118563265B (zh) * | 2024-05-23 | 2025-06-20 | 广东华升纳米科技股份有限公司 | 一种阴极一体化涂层制备方法、装置以及AlTiN涂层 |
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| JP3439993B2 (ja) * | 1998-07-22 | 2003-08-25 | 株式会社不二越 | マグネトロンスパッタ装置 |
| JP4112834B2 (ja) * | 2000-12-28 | 2008-07-02 | 株式会社神戸製鋼所 | 切削工具用硬質皮膜を形成するためのターゲット |
| SE526338C2 (sv) * | 2002-09-04 | 2005-08-23 | Seco Tools Ab | Skär med utskiljningshärdad slitstark refraktär beläggning |
| ATE355395T1 (de) * | 2002-11-19 | 2006-03-15 | Hitachi Tool Eng | Hartstoffschicht und damit beschichtetes werkzeug |
| JP2004230515A (ja) * | 2003-01-30 | 2004-08-19 | Nachi Fujikoshi Corp | 高機能加工用工具 |
| JP2006082210A (ja) * | 2004-09-17 | 2006-03-30 | Sumitomo Electric Hardmetal Corp | 表面被覆切削工具 |
| JP5060714B2 (ja) * | 2004-09-30 | 2012-10-31 | 株式会社神戸製鋼所 | 耐摩耗性および耐酸化性に優れた硬質皮膜、並びに該硬質皮膜形成用ターゲット |
| DE102005033769B4 (de) | 2005-07-15 | 2009-10-22 | Systec System- Und Anlagentechnik Gmbh & Co.Kg | Verfahren und Vorrichtung zur Mehrkathoden-PVD-Beschichtung und Substrat mit PVD-Beschichtung |
| JP2007119810A (ja) * | 2005-10-26 | 2007-05-17 | Hitachi Tool Engineering Ltd | 被覆部材 |
| GB0608582D0 (en) * | 2006-05-02 | 2006-06-07 | Univ Sheffield Hallam | High power impulse magnetron sputtering vapour deposition |
| US8435389B2 (en) * | 2006-12-12 | 2013-05-07 | Oc Oerlikon Balzers Ag | RF substrate bias with high power impulse magnetron sputtering (HIPIMS) |
| SE0602814L (sv) * | 2006-12-27 | 2008-06-28 | Sandvik Intellectual Property | Skärverktyg med multiskiktbeläggning |
| JP4668214B2 (ja) * | 2007-01-17 | 2011-04-13 | 株式会社神戸製鋼所 | 成形用金型 |
| EP2208560B2 (en) * | 2007-10-12 | 2017-09-20 | Hitachi Tool Engineering, Ltd. | Process for the production of the member covered with hard coating |
| KR101647515B1 (ko) * | 2008-04-03 | 2016-08-10 | 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 | 반도체 칩용 금속 배선 구조의 제조 방법, 그리고 반도체 칩용 금속 배선 구조 제조를 위한 금속 배선 구조 제조 장치의 제어 방법 |
| DE102008019202A1 (de) * | 2008-04-17 | 2009-10-22 | Kennametal Inc. | Beschichtungsverfahren , Werkstück oder Werkzeug und dessen Verwendung |
| DE202009018428U1 (de) * | 2008-04-28 | 2011-09-28 | Cemecon Ag | Vorrichtung zum Vorbehandeln und Beschichten von Körpern |
| JP5424103B2 (ja) * | 2008-09-24 | 2014-02-26 | 日立金属株式会社 | 塑性加工用被覆金型 |
| WO2010040494A1 (en) | 2008-10-10 | 2010-04-15 | Oerlikon Trading Ag, Trübbach | Non gamma - phase cubic alcro |
| JP5395454B2 (ja) * | 2009-02-17 | 2014-01-22 | 住友電気工業株式会社 | 表面被覆切削工具 |
| KR101614979B1 (ko) * | 2009-04-03 | 2016-04-22 | 산드빅 인터렉츄얼 프로퍼티 에이비 | 높은 온도를 발생시키는 금속 절삭 분야를 위한 코팅된 절삭 공구 |
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| US20140234616A1 (en) | 2014-08-21 |
| WO2013045454A3 (en) | 2013-05-23 |
| EP2761050A2 (en) | 2014-08-06 |
| US9416440B2 (en) | 2016-08-16 |
| WO2013045454A2 (en) | 2013-04-04 |
| EP2761050B1 (en) | 2021-08-25 |
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