CN111962034B - 一种覆铜板及其高速真空制备方法 - Google Patents
一种覆铜板及其高速真空制备方法 Download PDFInfo
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- CN111962034B CN111962034B CN202010819635.XA CN202010819635A CN111962034B CN 111962034 B CN111962034 B CN 111962034B CN 202010819635 A CN202010819635 A CN 202010819635A CN 111962034 B CN111962034 B CN 111962034B
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- copper
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- 238000002360 preparation method Methods 0.000 title claims abstract description 36
- 239000010949 copper Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 238000005516 engineering process Methods 0.000 claims abstract description 48
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052802 copper Inorganic materials 0.000 claims abstract description 30
- 238000004544 sputter deposition Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 32
- 238000002347 injection Methods 0.000 claims description 29
- 239000007924 injection Substances 0.000 claims description 29
- 238000000151 deposition Methods 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 18
- 229910021645 metal ion Inorganic materials 0.000 claims description 14
- 230000004913 activation Effects 0.000 claims description 12
- 230000001133 acceleration Effects 0.000 claims description 10
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 9
- 229910001431 copper ion Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000001771 vacuum deposition Methods 0.000 claims description 9
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 4
- 229920002530 polyetherether ketone Polymers 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 2
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 claims 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 description 15
- 229920001721 polyimide Polymers 0.000 description 15
- 230000008021 deposition Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- -1 polyethylene Polymers 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000011161 development Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004698 Polyethylene Substances 0.000 description 3
- 239000004734 Polyphenylene sulfide Substances 0.000 description 3
- 239000004954 Polyphthalamide Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229920002492 poly(sulfone) Polymers 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 description 3
- 229920006375 polyphtalamide Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007719 peel strength test Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
- C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN202010819635.XA CN111962034B (zh) | 2020-08-14 | 2020-08-14 | 一种覆铜板及其高速真空制备方法 |
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CN202010819635.XA CN111962034B (zh) | 2020-08-14 | 2020-08-14 | 一种覆铜板及其高速真空制备方法 |
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CN111962034A CN111962034A (zh) | 2020-11-20 |
CN111962034B true CN111962034B (zh) | 2022-11-01 |
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CN202010819635.XA Active CN111962034B (zh) | 2020-08-14 | 2020-08-14 | 一种覆铜板及其高速真空制备方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113667952B (zh) * | 2021-08-27 | 2022-07-12 | 江苏耀鸿电子有限公司 | 一种磁控溅射柔性覆铜基板及其制备方法 |
CN115124374A (zh) * | 2022-06-15 | 2022-09-30 | 深圳元点真空装备有限公司 | 一种sbc陶瓷表面覆厚金属层技术及其陶瓷封装基板 |
CN115572940A (zh) * | 2022-11-07 | 2023-01-06 | 浙江生波智能装备有限公司 | 用于电路板或电池电极的卷绕式铜膜真空镀膜方法 |
Citations (9)
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WO2009079358A1 (en) * | 2007-12-14 | 2009-06-25 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
CN103122452A (zh) * | 2013-03-11 | 2013-05-29 | 大连理工大学 | 泡沫塑料高功率脉冲磁控溅射表面金属化方法 |
CN105154838A (zh) * | 2015-09-22 | 2015-12-16 | 华南理工大学 | 一种高离化率高功率脉冲磁控溅射沉积薄膜的方法 |
CN105448818A (zh) * | 2015-12-31 | 2016-03-30 | 上海集成电路研发中心有限公司 | 一种应用于半导体铜互连工艺的磁控溅射方法 |
CN106521440A (zh) * | 2016-11-12 | 2017-03-22 | 北京印刷学院 | 一种采用磁控溅射法制备高附着力镀铝膜的方法 |
CN107620051A (zh) * | 2017-09-04 | 2018-01-23 | 武汉光谷创元电子有限公司 | 覆铜板及其制造方法 |
CN108315692A (zh) * | 2017-12-22 | 2018-07-24 | 兰州空间技术物理研究所 | 一种在聚酰亚胺基底上制备金属膜的方法 |
CN108411247A (zh) * | 2018-03-30 | 2018-08-17 | 武汉光谷创元电子有限公司 | Lcp基挠性覆铜板的制造方法及其制品 |
CN110205597A (zh) * | 2019-07-12 | 2019-09-06 | 哈尔滨工业大学 | 多段式双极性脉冲高功率脉冲磁控溅射方法 |
Family Cites Families (2)
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US20100055826A1 (en) * | 2008-08-26 | 2010-03-04 | General Electric Company | Methods of Fabrication of Solar Cells Using High Power Pulsed Magnetron Sputtering |
US9416440B2 (en) * | 2011-09-30 | 2016-08-16 | Cemecon Ag | Coating of substrates using HIPIMS |
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2020
- 2020-08-14 CN CN202010819635.XA patent/CN111962034B/zh active Active
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WO2009079358A1 (en) * | 2007-12-14 | 2009-06-25 | The Regents Of The University Of California | Very low pressure high power impulse triggered magnetron sputtering |
CN103122452A (zh) * | 2013-03-11 | 2013-05-29 | 大连理工大学 | 泡沫塑料高功率脉冲磁控溅射表面金属化方法 |
CN105154838A (zh) * | 2015-09-22 | 2015-12-16 | 华南理工大学 | 一种高离化率高功率脉冲磁控溅射沉积薄膜的方法 |
CN105448818A (zh) * | 2015-12-31 | 2016-03-30 | 上海集成电路研发中心有限公司 | 一种应用于半导体铜互连工艺的磁控溅射方法 |
CN106521440A (zh) * | 2016-11-12 | 2017-03-22 | 北京印刷学院 | 一种采用磁控溅射法制备高附着力镀铝膜的方法 |
CN107620051A (zh) * | 2017-09-04 | 2018-01-23 | 武汉光谷创元电子有限公司 | 覆铜板及其制造方法 |
CN108315692A (zh) * | 2017-12-22 | 2018-07-24 | 兰州空间技术物理研究所 | 一种在聚酰亚胺基底上制备金属膜的方法 |
CN108411247A (zh) * | 2018-03-30 | 2018-08-17 | 武汉光谷创元电子有限公司 | Lcp基挠性覆铜板的制造方法及其制品 |
CN110205597A (zh) * | 2019-07-12 | 2019-09-06 | 哈尔滨工业大学 | 多段式双极性脉冲高功率脉冲磁控溅射方法 |
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An Auger study on the interaction of Cu and Cr films with polyimide;Tae-Gyeong Chung et al.;《Journal of Adhesion Science and》;19941231;第8卷(第1期);第41-51页 * |
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