JP6084469B2 - 半導体評価装置および半導体評価方法 - Google Patents

半導体評価装置および半導体評価方法 Download PDF

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Publication number
JP6084469B2
JP6084469B2 JP2013013046A JP2013013046A JP6084469B2 JP 6084469 B2 JP6084469 B2 JP 6084469B2 JP 2013013046 A JP2013013046 A JP 2013013046A JP 2013013046 A JP2013013046 A JP 2013013046A JP 6084469 B2 JP6084469 B2 JP 6084469B2
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fluid
measured
spraying
semiconductor
semiconductor evaluation
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JP2014145615A5 (enExample
JP2014145615A (ja
Inventor
肇 秋山
肇 秋山
岡田　章
章 岡田
欽也 山下
欽也 山下
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2013013046A priority Critical patent/JP6084469B2/ja
Priority to US14/065,064 priority patent/US9335371B2/en
Priority to CN201410042200.3A priority patent/CN103969565B/zh
Publication of JP2014145615A publication Critical patent/JP2014145615A/ja
Publication of JP2014145615A5 publication Critical patent/JP2014145615A5/ja
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)
JP2013013046A 2013-01-28 2013-01-28 半導体評価装置および半導体評価方法 Expired - Fee Related JP6084469B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013013046A JP6084469B2 (ja) 2013-01-28 2013-01-28 半導体評価装置および半導体評価方法
US14/065,064 US9335371B2 (en) 2013-01-28 2013-10-28 Semiconductor evaluating device and semiconductor evaluating method
CN201410042200.3A CN103969565B (zh) 2013-01-28 2014-01-28 半导体评价装置及半导体评价方法

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JP2013013046A JP6084469B2 (ja) 2013-01-28 2013-01-28 半導体評価装置および半導体評価方法

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JP2014145615A JP2014145615A (ja) 2014-08-14
JP2014145615A5 JP2014145615A5 (enExample) 2015-07-09
JP6084469B2 true JP6084469B2 (ja) 2017-02-22

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US (1) US9335371B2 (enExample)
JP (1) JP6084469B2 (enExample)
CN (1) CN103969565B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6218718B2 (ja) * 2014-10-22 2017-10-25 三菱電機株式会社 半導体評価装置及びその評価方法
JP6351763B2 (ja) * 2015-01-23 2018-07-04 三菱電機株式会社 半導体装置評価用治具、半導体装置評価装置および半導体装置評価方法
JP6386923B2 (ja) * 2015-01-26 2018-09-05 三菱電機株式会社 半導体評価装置およびチャックステージの検査方法
TWI530700B (zh) 2015-03-11 2016-04-21 旺矽科技股份有限公司 測試機台及其操作方法
JP2017009449A (ja) * 2015-06-23 2017-01-12 三菱電機株式会社 コンタクトプローブ型温度検出器、半導体装置の評価装置および半導体装置の評価方法
JP6504971B2 (ja) * 2015-08-20 2019-04-24 三菱電機株式会社 半導体チップテスト装置および半導体チップテスト方法
JP6418118B2 (ja) * 2015-09-24 2018-11-07 三菱電機株式会社 半導体装置の評価装置及び評価方法
JP6478891B2 (ja) * 2015-10-07 2019-03-06 三菱電機株式会社 プローブ位置検査装置
JP6515819B2 (ja) * 2016-01-08 2019-05-22 三菱電機株式会社 評価装置、プローブ位置の検査方法
JP2017129395A (ja) * 2016-01-19 2017-07-27 三菱電機株式会社 半導体装置の検査装置および半導体装置の検査方法
JP6593251B2 (ja) * 2016-05-19 2019-10-23 三菱電機株式会社 半導体検査装置
JP6562896B2 (ja) * 2016-12-22 2019-08-21 三菱電機株式会社 半導体装置の評価装置およびそれを用いた半導体装置の評価方法
JP6739326B2 (ja) * 2016-12-27 2020-08-12 三菱電機株式会社 評価装置及び評価方法
CN108535620A (zh) * 2017-03-02 2018-09-14 叶秀慧 应用静电载具测试半导体制品的机构
JP6822991B2 (ja) * 2018-02-20 2021-01-27 株式会社東芝 可動端子装置と可動端子の出力を検出する装置
US11378619B2 (en) * 2019-12-18 2022-07-05 Formfactor, Inc. Double-sided probe systems with thermal control systems and related methods
CN114563677B (zh) * 2022-03-01 2025-06-17 扬州扬杰电子科技股份有限公司 贴片二极管全自动检测装置

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JPS6165174A (ja) * 1984-09-06 1986-04-03 Hitachi Electronics Eng Co Ltd 電子部品加熱装置
JPH0322454A (ja) * 1989-06-19 1991-01-30 Nec Corp 半導体検査装置
JP2969086B2 (ja) 1996-09-25 1999-11-02 中日本電子株式会社 大電流用小型接触子
JP3071155B2 (ja) * 1997-05-16 2000-07-31 ユーエイチティー株式会社 Ｂ・ｇ・ａ、ｐ・ｇ・ａ等のｉｃパッケージ用の基板の導通検査方法及びその装置
JP3979737B2 (ja) * 1998-11-25 2007-09-19 宮崎沖電気株式会社 電気的特性測定用装置および電気的特性測定方法
US6248169B1 (en) * 1999-06-01 2001-06-19 Taiwan Semiconductor Manufacturing Company, Ltd. Dual-cup coating apparatus
JP2002022770A (ja) * 2000-07-07 2002-01-23 Micronics Japan Co Ltd プローブカード
JP2003130889A (ja) * 2001-10-29 2003-05-08 Vector Semicon Kk 半導体装置検査装置及び検査方法
US6741445B1 (en) * 2002-01-16 2004-05-25 Advanced Micro Devices, Inc. Method and system to monitor and control electro-static discharge
JP2004111442A (ja) * 2002-09-13 2004-04-08 Fujitsu Ltd 半導体検査装置
CN1278403C (zh) 2003-04-08 2006-10-04 力晶半导体股份有限公司 晶圆表面离子取样系统及方法
US20050000549A1 (en) * 2003-07-03 2005-01-06 Oikari James R. Wafer processing using gaseous antistatic agent during drying phase to control charge build-up
JP2005030829A (ja) * 2003-07-09 2005-02-03 Seiko Epson Corp プッシャおよび半導体装置の特性検査装置
JP2006337359A (ja) * 2005-05-02 2006-12-14 Daytona Control Co Ltd 温度制御装置
DE102006018474A1 (de) * 2006-04-19 2007-10-25 Infineon Technologies Ag Testvorrichtung für Halbleiterelemente auf einem Halbleiterwafer sowie ein Testverfahren unter Verwendung der Testvorrichtung
JP2008032457A (ja) 2006-07-27 2008-02-14 Olympus Corp 基板検査装置及び基板検査装置に用いられるランプユニット
JP5491189B2 (ja) * 2007-11-07 2014-05-14 明彦 谷岡 固定化装置
JP5375745B2 (ja) * 2010-06-02 2013-12-25 富士電機株式会社 試験装置および試験方法
US8941390B2 (en) * 2012-03-01 2015-01-27 Neuronexus Technologies, Inc. System and method for testing electrical circuits using a photoelectrochemical effect

Also Published As

Publication number Publication date
CN103969565A (zh) 2014-08-06
CN103969565B (zh) 2016-12-07
US9335371B2 (en) 2016-05-10
US20140210500A1 (en) 2014-07-31
JP2014145615A (ja) 2014-08-14

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