JP6075120B2 - 炭化珪素半導体装置 - Google Patents

炭化珪素半導体装置 Download PDF

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Publication number
JP6075120B2
JP6075120B2 JP2013040542A JP2013040542A JP6075120B2 JP 6075120 B2 JP6075120 B2 JP 6075120B2 JP 2013040542 A JP2013040542 A JP 2013040542A JP 2013040542 A JP2013040542 A JP 2013040542A JP 6075120 B2 JP6075120 B2 JP 6075120B2
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silicon carbide
region
semiconductor device
interface
main surface
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Japanese (ja)
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JP2014170778A (ja
Inventor
増田　健良
健良 増田
和田　圭司
圭司 和田
健二 平塚
健二 平塚
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to PCT/JP2014/050625 priority patent/WO2014132689A1/fr
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0495—Schottky electrodes
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2013040542A 2013-03-01 2013-03-01 炭化珪素半導体装置 Active JP6075120B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013040542A JP6075120B2 (ja) 2013-03-01 2013-03-01 炭化珪素半導体装置
PCT/JP2014/050625 WO2014132689A1 (fr) 2013-03-01 2014-01-16 Dispositif à semi-conducteur en carbure de silicium

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JP2013040542A JP6075120B2 (ja) 2013-03-01 2013-03-01 炭化珪素半導体装置

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JP2014170778A JP2014170778A (ja) 2014-09-18
JP6075120B2 true JP6075120B2 (ja) 2017-02-08

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JP6255111B2 (ja) * 2014-09-17 2017-12-27 株式会社日立製作所 半導体装置、インバータモジュール、インバータ、鉄道車両、および半導体装置の製造方法
JP6478884B2 (ja) 2015-09-11 2019-03-06 株式会社東芝 半導体装置
JP6870546B2 (ja) 2017-09-14 2021-05-12 株式会社デンソー 半導体装置およびその製造方法
SE541402C2 (en) 2017-09-15 2019-09-17 Ascatron Ab Integration of a schottky diode with a mosfet
JP7333509B2 (ja) * 2018-11-05 2023-08-25 国立大学法人 筑波大学 炭化珪素半導体装置
JP7101101B2 (ja) * 2018-11-15 2022-07-14 ルネサスエレクトロニクス株式会社 半導体装置
JPWO2022102262A1 (fr) * 2020-11-10 2022-05-19

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JP3392665B2 (ja) * 1995-11-06 2003-03-31 株式会社東芝 半導体装置
JP4088852B2 (ja) * 1998-09-21 2008-05-21 関西電力株式会社 ＳｉＣショットキーダイオード
DE19843659A1 (de) * 1998-09-23 2000-04-06 Siemens Ag Halbleiterbauelement mit strukturiertem Halbleiterkörper
JP4044332B2 (ja) * 2001-12-26 2008-02-06 関西電力株式会社 高耐電圧半導体装置
JP3930436B2 (ja) * 2002-03-26 2007-06-13 株式会社東芝 半導体装置
JP2004087555A (ja) * 2002-08-23 2004-03-18 Toko Inc ショットキーバリアダイオード
JP4832731B2 (ja) * 2004-07-07 2011-12-07 株式会社東芝 電力用半導体装置
JP4189415B2 (ja) * 2006-06-30 2008-12-03 株式会社東芝 半導体装置
JP4599379B2 (ja) * 2007-08-31 2010-12-15 株式会社東芝 トレンチゲート型半導体装置
JP5396953B2 (ja) * 2009-03-19 2014-01-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5511019B2 (ja) * 2011-11-04 2014-06-04 ルネサスエレクトロニクス株式会社 半導体装置

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