JP6071164B2 - レーザ熱転写用マスク、及びこれを利用した有機電界発光表示装置の製造方法 - Google Patents
レーザ熱転写用マスク、及びこれを利用した有機電界発光表示装置の製造方法 Download PDFInfo
- Publication number
- JP6071164B2 JP6071164B2 JP2010227777A JP2010227777A JP6071164B2 JP 6071164 B2 JP6071164 B2 JP 6071164B2 JP 2010227777 A JP2010227777 A JP 2010227777A JP 2010227777 A JP2010227777 A JP 2010227777A JP 6071164 B2 JP6071164 B2 JP 6071164B2
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- Prior art keywords
- transparent substrate
- laser
- laser beam
- substrate
- film pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000005401 electroluminescence Methods 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims description 128
- 238000000034 method Methods 0.000 claims description 16
- 239000007769 metal material Substances 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 54
- 239000010410 layer Substances 0.000 description 48
- 230000005540 biological transmission Effects 0.000 description 27
- 238000002834 transmittance Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052789 astatine Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- -1 specifically Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
- B41M3/003—Printing processes to produce particular kinds of printed work, e.g. patterns on optical devices, e.g. lens elements; for the production of optical devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
- B41M3/00—Printing processes to produce particular kinds of printed work, e.g. patterns
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
Description
前記第2電極840がアノードである場合は、仕事関数が高い金属としてITOまたはIZOからなる透明電極とするか、またはPt、Au、Ir、Cr、Mg、Ag、Ni、Al、及びこれらの合金からなる反射電極とすることができる。
310、410 反射膜パターン
320、420、550b、600b 散乱部
300a、400a、550a 透過領域
700 ドナー基板
710 基材層
720 光−熱変換層
730 転写層
730’有機膜層
810 絶縁基板
Claims (4)
- 透過領域を含む透明基板;
前記透過領域を除いた透明基板の後面の全面に位置する反射膜パターン;及び
前記透明基板の前面及び後面の両方の面に位置し、粗い形状または凹凸形状を含む散乱(scattering)部を含み、
前記散乱部は前記反射膜パターンと対応する位置に形成され、
前記反射膜パターンは、前記透明基板の後面に設けられる前記散乱部上に形成されることを特徴とする、マスク。 - 前記反射膜パターンは金属物質からなることを特徴とする、請求項1に記載のマスク。
- ドナー基板上に転写層を形成する段階;
基板上に第1電極を形成する段階;
前記ドナー基板と前記基板をアラインする段階;
前記ドナー基板にマスクを使用してレーザを照射する段階;及び
前記第1電極上に転写層を転写する段階を含み、
前記マスクは、透過領域を含む透明基板;前記透過領域を除いた透明基板の後面の全面に位置する反射膜パターン;及び前記透明基板の前面及び後面の両方の面に位置し、粗い形状または凹凸形状を含む散乱部を含み、
前記散乱部は前記反射膜パターンと対応する位置に形成され、
前記反射膜パターンは、前記透明基板の後面に設けられる前記散乱部上に形成されることを特徴とする、有機電界発光表示装置の製造方法。 - 前記反射膜パターンは金属物質からなることを特徴とする、請求項3に記載の有機電界発光表示装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100012918A KR101094305B1 (ko) | 2010-02-11 | 2010-02-11 | 레이저 열전사용 마스크 및 이를 이용한 유기전계발광표시장치의 제조방법 |
KR10-2010-0012918 | 2010-02-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011165647A JP2011165647A (ja) | 2011-08-25 |
JP6071164B2 true JP6071164B2 (ja) | 2017-02-01 |
Family
ID=44353991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010227777A Expired - Fee Related JP6071164B2 (ja) | 2010-02-11 | 2010-10-07 | レーザ熱転写用マスク、及びこれを利用した有機電界発光表示装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8785081B2 (ja) |
JP (1) | JP6071164B2 (ja) |
KR (1) | KR101094305B1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101435294B1 (ko) * | 2012-12-31 | 2014-08-27 | 울산대학교 산학협력단 | 신규한 아렌-루테늄 화합물 및 이를 유효성분으로 함유하는 암의 예방 또는 치료용 약학 조성물 |
KR102081286B1 (ko) * | 2013-04-16 | 2020-04-16 | 삼성디스플레이 주식회사 | 레이저 열전사 장치, 레이저 열전사 방법 및 이를 이용한 유기발광 디스플레이 장치 제조방법 |
KR20150135720A (ko) | 2014-05-23 | 2015-12-03 | 삼성디스플레이 주식회사 | 도너마스크 및 이를 이용한 유기발광 디스플레이 장치 제조방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5688319A (en) * | 1979-12-19 | 1981-07-17 | Mitsubishi Electric Corp | Method for forming film pattern |
JPS642798A (en) * | 1987-06-23 | 1989-01-06 | Mitsubishi Electric Corp | Laser beam machine |
JPS6487169A (en) * | 1987-09-25 | 1989-03-31 | Toshiba Corp | Laser marking device |
JPH073400Y2 (ja) * | 1987-12-16 | 1995-01-30 | 喜務良工業株式会社 | レーザーマーキング用ガラスマスク |
JPH03258481A (ja) * | 1990-03-09 | 1991-11-18 | Toshiba Corp | レーザマーキング装置 |
JPH05245664A (ja) * | 1992-03-10 | 1993-09-24 | Toshiba Corp | レーザ加工装置 |
US5387484A (en) * | 1992-07-07 | 1995-02-07 | International Business Machines Corporation | Two-sided mask for patterning of materials with electromagnetic radiation |
JPH07191448A (ja) | 1993-12-27 | 1995-07-28 | Mitsubishi Electric Corp | フォトマスクおよびフォトマスクブランク |
JPH07323387A (ja) | 1994-05-31 | 1995-12-12 | Naoetsu Denshi Kogyo Kk | レーザマーキング用マスク及びレーザマーキング用マスクの製造方法 |
JPH08334608A (ja) * | 1995-06-07 | 1996-12-17 | Nippon Sheet Glass Co Ltd | 光散乱体およびその製造方法 |
JP2002011589A (ja) | 2000-06-28 | 2002-01-15 | Hitachi Ltd | レーザ加工用マスクとその製造方法、製造装置、及びレーザアブレーション加工装置、並びに該マスクを用いて製作した画像表示装置 |
JP2001155366A (ja) | 2000-10-04 | 2001-06-08 | Hitachi Ltd | 光ヘッドおよび光ヘッドの製造方法 |
US20050130048A1 (en) | 2003-11-10 | 2005-06-16 | Tomoyuki Nakano | Electro-optic device substrate and method for manufacturing the same electro-optic device and method for manufacturing the same, photomask, and electronic device |
JP2005215642A (ja) | 2004-02-02 | 2005-08-11 | Shin Sti Technology Kk | フォトマスク及び拡散反射板の製造方法 |
JP2009093984A (ja) * | 2007-10-11 | 2009-04-30 | Hitachi Displays Ltd | 有機el表示装置およびその製造方法 |
-
2010
- 2010-02-11 KR KR1020100012918A patent/KR101094305B1/ko active IP Right Grant
- 2010-10-07 JP JP2010227777A patent/JP6071164B2/ja not_active Expired - Fee Related
-
2011
- 2011-02-09 US US13/024,271 patent/US8785081B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR101094305B1 (ko) | 2011-12-19 |
KR20110093092A (ko) | 2011-08-18 |
JP2011165647A (ja) | 2011-08-25 |
US20110195352A1 (en) | 2011-08-11 |
US8785081B2 (en) | 2014-07-22 |
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