JP6068171B2 - 試料の処理方法および試料処理装置 - Google Patents

試料の処理方法および試料処理装置 Download PDF

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Publication number
JP6068171B2
JP6068171B2 JP2013019066A JP2013019066A JP6068171B2 JP 6068171 B2 JP6068171 B2 JP 6068171B2 JP 2013019066 A JP2013019066 A JP 2013019066A JP 2013019066 A JP2013019066 A JP 2013019066A JP 6068171 B2 JP6068171 B2 JP 6068171B2
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processing
gas
sample
resist
processing chamber
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Japanese (ja)
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JP2014150202A5 (enExample
JP2014150202A (ja
Inventor
豊 高妻
豊 高妻
博昭 老泉
博昭 老泉
安井　尚輝
尚輝 安井
渡辺　成一
成一 渡辺
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2013019066A priority Critical patent/JP6068171B2/ja
Priority to US13/792,325 priority patent/US20140220489A1/en
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Publication of JP2014150202A5 publication Critical patent/JP2014150202A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP2013019066A 2013-02-04 2013-02-04 試料の処理方法および試料処理装置 Active JP6068171B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013019066A JP6068171B2 (ja) 2013-02-04 2013-02-04 試料の処理方法および試料処理装置
US13/792,325 US20140220489A1 (en) 2013-02-04 2013-03-11 Method for processing sample and sample processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013019066A JP6068171B2 (ja) 2013-02-04 2013-02-04 試料の処理方法および試料処理装置

Publications (3)

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JP2014150202A JP2014150202A (ja) 2014-08-21
JP2014150202A5 JP2014150202A5 (enExample) 2016-03-17
JP6068171B2 true JP6068171B2 (ja) 2017-01-25

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US (1) US20140220489A1 (enExample)
JP (1) JP6068171B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
JP6881120B2 (ja) * 2017-07-19 2021-06-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
KR102374206B1 (ko) 2017-12-05 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
CN113227909B (zh) 2018-12-20 2025-07-04 朗姆研究公司 抗蚀剂的干式显影
TW202514246A (zh) * 2019-03-18 2025-04-01 美商蘭姆研究公司 基板處理方法與設備
US12062538B2 (en) 2019-04-30 2024-08-13 Lam Research Corporation Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
KR20250007037A (ko) 2020-01-15 2025-01-13 램 리써치 코포레이션 포토레지스트 부착 및 선량 감소를 위한 하부층
WO2021173557A1 (en) 2020-02-28 2021-09-02 Lam Research Corporation Multi-layer hardmask for defect reduction in euv patterning
TWI876020B (zh) 2020-04-03 2025-03-11 美商蘭姆研究公司 處理光阻的方法、以及用於沉積薄膜的設備
CN116626993A (zh) 2020-07-07 2023-08-22 朗姆研究公司 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺
TW202217929A (zh) * 2020-10-09 2022-05-01 日商東京威力科創股份有限公司 基板處理方法、基板處理裝置及記錄媒體
JP7562696B2 (ja) 2020-11-13 2024-10-07 ラム リサーチ コーポレーション フォトレジストのドライ除去用プロセスツール
CN118541785A (zh) * 2022-01-20 2024-08-23 应用材料公司 具有局部净化的低氧扫描uv源

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6379869B1 (en) * 1999-03-31 2002-04-30 Infineon Technologies Ag Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning
JP2005197348A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 半導体製造装置及び半導体装置の製造方法
US9390941B2 (en) * 2009-11-17 2016-07-12 Hitachi High-Technologies Corporation Sample processing apparatus, sample processing system, and method for processing sample
JP2012049305A (ja) * 2010-08-26 2012-03-08 Hitachi High-Technologies Corp 真空紫外光処理装置
US8529776B2 (en) * 2011-07-25 2013-09-10 Applied Materials, Inc. High lateral to vertical ratio etch process for device manufacturing
JP2013229454A (ja) * 2012-04-26 2013-11-07 Hitachi High-Technologies Corp 膜厚モニタを有するｖｕｖ処理装置および処理方法

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JP2014150202A (ja) 2014-08-21
US20140220489A1 (en) 2014-08-07

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