JP2014150202A5 - - Google Patents
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- Publication number
- JP2014150202A5 JP2014150202A5 JP2013019066A JP2013019066A JP2014150202A5 JP 2014150202 A5 JP2014150202 A5 JP 2014150202A5 JP 2013019066 A JP2013019066 A JP 2013019066A JP 2013019066 A JP2013019066 A JP 2013019066A JP 2014150202 A5 JP2014150202 A5 JP 2014150202A5
- Authority
- JP
- Japan
- Prior art keywords
- processing
- sample
- gas
- resist
- processing chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003672 processing method Methods 0.000 claims 6
- 230000001678 irradiating effect Effects 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims 2
- 229910003902 SiCl 4 Inorganic materials 0.000 claims 2
- 239000006185 dispersion Substances 0.000 claims 2
- 239000005049 silicon tetrachloride Substances 0.000 claims 2
- 229910004261 CaF 2 Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013019066A JP6068171B2 (ja) | 2013-02-04 | 2013-02-04 | 試料の処理方法および試料処理装置 |
| US13/792,325 US20140220489A1 (en) | 2013-02-04 | 2013-03-11 | Method for processing sample and sample processing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013019066A JP6068171B2 (ja) | 2013-02-04 | 2013-02-04 | 試料の処理方法および試料処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014150202A JP2014150202A (ja) | 2014-08-21 |
| JP2014150202A5 true JP2014150202A5 (enExample) | 2016-03-17 |
| JP6068171B2 JP6068171B2 (ja) | 2017-01-25 |
Family
ID=51259487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013019066A Active JP6068171B2 (ja) | 2013-02-04 | 2013-02-04 | 試料の処理方法および試料処理装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20140220489A1 (enExample) |
| JP (1) | JP6068171B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| JP6881120B2 (ja) * | 2017-07-19 | 2021-06-02 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
| KR102374206B1 (ko) | 2017-12-05 | 2022-03-14 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| TW202514246A (zh) * | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI869221B (zh) | 2019-06-26 | 2025-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20250007037A (ko) | 2020-01-15 | 2025-01-13 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
| WO2021173557A1 (en) | 2020-02-28 | 2021-09-02 | Lam Research Corporation | Multi-layer hardmask for defect reduction in euv patterning |
| TWI876020B (zh) | 2020-04-03 | 2025-03-11 | 美商蘭姆研究公司 | 處理光阻的方法、以及用於沉積薄膜的設備 |
| CN116626993A (zh) | 2020-07-07 | 2023-08-22 | 朗姆研究公司 | 用于图案化辐射光致抗蚀剂图案化的集成干燥工艺 |
| TW202217929A (zh) * | 2020-10-09 | 2022-05-01 | 日商東京威力科創股份有限公司 | 基板處理方法、基板處理裝置及記錄媒體 |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| CN118541785A (zh) * | 2022-01-20 | 2024-08-23 | 应用材料公司 | 具有局部净化的低氧扫描uv源 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6379869B1 (en) * | 1999-03-31 | 2002-04-30 | Infineon Technologies Ag | Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning |
| JP2005197348A (ja) * | 2004-01-05 | 2005-07-21 | Semiconductor Leading Edge Technologies Inc | 半導体製造装置及び半導体装置の製造方法 |
| US9390941B2 (en) * | 2009-11-17 | 2016-07-12 | Hitachi High-Technologies Corporation | Sample processing apparatus, sample processing system, and method for processing sample |
| JP2012049305A (ja) * | 2010-08-26 | 2012-03-08 | Hitachi High-Technologies Corp | 真空紫外光処理装置 |
| US8529776B2 (en) * | 2011-07-25 | 2013-09-10 | Applied Materials, Inc. | High lateral to vertical ratio etch process for device manufacturing |
| JP2013229454A (ja) * | 2012-04-26 | 2013-11-07 | Hitachi High-Technologies Corp | 膜厚モニタを有するｖｕｖ処理装置および処理方法 |
-
2013
- 2013-02-04 JP JP2013019066A patent/JP6068171B2/ja active Active
- 2013-03-11 US US13/792,325 patent/US20140220489A1/en not_active Abandoned
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