JP2007503728A5 - - Google Patents

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Publication number
JP2007503728A5
JP2007503728A5 JP2006532556A JP2006532556A JP2007503728A5 JP 2007503728 A5 JP2007503728 A5 JP 2007503728A5 JP 2006532556 A JP2006532556 A JP 2006532556A JP 2006532556 A JP2006532556 A JP 2006532556A JP 2007503728 A5 JP2007503728 A5 JP 2007503728A5
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JP
Japan
Prior art keywords
layer
underlayer
top image
image layer
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006532556A
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English (en)
Japanese (ja)
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JP2007503728A (ja
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Publication date
Priority claimed from US10/435,130 external-priority patent/US7049052B2/en
Application filed filed Critical
Publication of JP2007503728A publication Critical patent/JP2007503728A/ja
Publication of JP2007503728A5 publication Critical patent/JP2007503728A5/ja
Pending legal-status Critical Current

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JP2006532556A 2003-05-09 2004-04-29 改良されたバイレイヤフォトレジストパターンを提供する方法 Pending JP2007503728A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/435,130 US7049052B2 (en) 2003-05-09 2003-05-09 Method providing an improved bi-layer photoresist pattern
PCT/US2004/013818 WO2004102277A2 (en) 2003-05-09 2004-04-29 Method providing an improved bi-layer photoresist pattern

Publications (2)

Publication Number Publication Date
JP2007503728A JP2007503728A (ja) 2007-02-22
JP2007503728A5 true JP2007503728A5 (enExample) 2007-06-21

Family

ID=33416877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006532556A Pending JP2007503728A (ja) 2003-05-09 2004-04-29 改良されたバイレイヤフォトレジストパターンを提供する方法

Country Status (7)

Country Link
US (2) US7049052B2 (enExample)
EP (1) EP1623275A2 (enExample)
JP (1) JP2007503728A (enExample)
KR (2) KR101144019B1 (enExample)
CN (1) CN1816777B (enExample)
TW (1) TWI348180B (enExample)
WO (1) WO2004102277A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048325B2 (en) * 2003-03-31 2011-11-01 Tokyo Electron Limited Method and apparatus for multilayer photoresist dry development
US7785753B2 (en) * 2006-05-17 2010-08-31 Lam Research Corporation Method and apparatus for providing mask in semiconductor processing
JP2008085005A (ja) * 2006-09-27 2008-04-10 Elpida Memory Inc 半導体装置の製造方法
US8283255B2 (en) * 2007-05-24 2012-10-09 Lam Research Corporation In-situ photoresist strip during plasma etching of active hard mask
US20090208865A1 (en) * 2008-02-19 2009-08-20 International Business Machines Corporation Photolithography focus improvement by reduction of autofocus radiation transmission into substrate
CN101971301B (zh) * 2008-03-11 2014-11-19 朗姆研究公司 利用稀有气体等离子的线宽粗糙度改进
KR101355434B1 (ko) 2012-06-12 2014-01-28 한국생산기술연구원 미세 홀이 배열된 폴리머 멤브레인을 포함하는 플라스틱 챔버 플레이트의 제작 방법
US9911620B2 (en) * 2015-02-23 2018-03-06 Lam Research Corporation Method for achieving ultra-high selectivity while etching silicon nitride
WO2017192349A1 (en) * 2016-05-03 2017-11-09 Dow Corning Corporation Silsesquioxane resin and silyl-anhydride composition
KR20180137523A (ko) 2016-05-03 2018-12-27 다우 실리콘즈 코포레이션 실세스퀴옥산 수지 및 옥사아민 조성물
US10643858B2 (en) 2017-10-11 2020-05-05 Samsung Electronics Co., Ltd. Method of etching substrate

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US5041361A (en) 1988-08-08 1991-08-20 Midwest Research Institute Oxygen ion-beam microlithography
JPH02172223A (ja) 1988-12-26 1990-07-03 Hitachi Ltd プラズマエッチング装置
US5277749A (en) * 1991-10-17 1994-01-11 International Business Machines Corporation Methods and apparatus for relieving stress and resisting stencil delamination when performing lift-off processes that utilize high stress metals and/or multiple evaporation steps
JP2547944B2 (ja) * 1992-09-30 1996-10-30 インターナショナル・ビジネス・マシーンズ・コーポレイション 二層レジスト組成物を使用する光学リソグラフによりサブ−ハーフミクロンパターンを形成する方法
DE19504434C1 (de) 1995-02-10 1996-05-15 Siemens Ag Verfahren zur Herstellung siliziumhaltiger Masken
JP2872637B2 (ja) * 1995-07-10 1999-03-17 アプライド マテリアルズ インコーポレイテッド マイクロ波プラズマベースアプリケータ
US5726102A (en) * 1996-06-10 1998-03-10 Vanguard International Semiconductor Corporation Method for controlling etch bias in plasma etch patterning of integrated circuit layers
KR100249172B1 (ko) * 1996-10-24 2000-03-15 김영환 감광막 식각방법
US5985524A (en) * 1997-03-28 1999-11-16 International Business Machines Incorporated Process for using bilayer photoresist
EP0911697A3 (en) 1997-10-22 1999-09-15 Interuniversitair Microelektronica Centrum Vzw A fluorinated hard mask for micropatterning of polymers
JP2000305273A (ja) * 1998-11-19 2000-11-02 Applied Materials Inc 遠紫外線ドライフォトリソグラフィー
US20010004510A1 (en) * 1998-12-15 2001-06-21 Wheeler David R. Refractory bilayer resist materials for lithography using highly attenuated radiation
TW478033B (en) * 1999-02-26 2002-03-01 Applied Materials Inc Improved dry photolithography process for deep ultraviolet exposure
US6153530A (en) * 1999-03-16 2000-11-28 Applied Materials, Inc. Post-etch treatment of plasma-etched feature surfaces to prevent corrosion
DE19919036C1 (de) 1999-04-27 2001-01-11 Bosch Gmbh Robert Ätzmaske und Verfahren zu deren Herstellung
US6344105B1 (en) * 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
US20010024769A1 (en) * 2000-02-08 2001-09-27 Kevin Donoghue Method for removing photoresist and residues from semiconductor device surfaces
KR100520188B1 (ko) * 2000-02-18 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
US6495311B1 (en) * 2000-03-17 2002-12-17 International Business Machines Corporation Bilayer liftoff process for high moment laminate
JP3403374B2 (ja) * 2000-05-26 2003-05-06 松下電器産業株式会社 有機膜のエッチング方法、半導体装置の製造方法及びパターンの形成方法
US6893969B2 (en) * 2001-02-12 2005-05-17 Lam Research Corporation Use of ammonia for etching organic low-k dielectrics
US6541361B2 (en) * 2001-06-27 2003-04-01 Lam Research Corp. Plasma enhanced method for increasing silicon-containing photoresist selectivity
JP3971603B2 (ja) 2001-12-04 2007-09-05 キヤノンアネルバ株式会社 絶縁膜エッチング装置及び絶縁膜エッチング方法
US6551938B1 (en) * 2002-01-25 2003-04-22 Taiwon Semiconductor Manufacturing Company N2/H2 chemistry for dry development in top surface imaging technology
US6716570B2 (en) * 2002-05-23 2004-04-06 Institute Of Microelectronics Low temperature resist trimming process
KR100989107B1 (ko) * 2003-03-31 2010-10-25 인터내셔널 비지니스 머신즈 코포레이션 다층 포토레지스트 건식 현상을 위한 방법 및 장치
US7226706B2 (en) * 2003-05-20 2007-06-05 Taiwan Semiconductor Manufacturing Company Modification of mask blank to avoid charging effect

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