JP6065554B2 - 比較器 - Google Patents

比較器 Download PDF

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Publication number
JP6065554B2
JP6065554B2 JP2012264808A JP2012264808A JP6065554B2 JP 6065554 B2 JP6065554 B2 JP 6065554B2 JP 2012264808 A JP2012264808 A JP 2012264808A JP 2012264808 A JP2012264808 A JP 2012264808A JP 6065554 B2 JP6065554 B2 JP 6065554B2
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JP
Japan
Prior art keywords
mos
voltage
fet
input
fets
Prior art date
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Active
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JP2012264808A
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English (en)
Japanese (ja)
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JP2014110569A5 (enExample
JP2014110569A (ja
Inventor
洋至 中島
洋至 中島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP2012264808A priority Critical patent/JP6065554B2/ja
Priority to US14/079,208 priority patent/US8901967B2/en
Publication of JP2014110569A publication Critical patent/JP2014110569A/ja
Publication of JP2014110569A5 publication Critical patent/JP2014110569A5/ja
Application granted granted Critical
Publication of JP6065554B2 publication Critical patent/JP6065554B2/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/2481—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors with at least one differential stage

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Measurement Of Current Or Voltage (AREA)
  • Manipulation Of Pulses (AREA)
JP2012264808A 2012-12-03 2012-12-03 比較器 Active JP6065554B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012264808A JP6065554B2 (ja) 2012-12-03 2012-12-03 比較器
US14/079,208 US8901967B2 (en) 2012-12-03 2013-11-13 Comparator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012264808A JP6065554B2 (ja) 2012-12-03 2012-12-03 比較器

Publications (3)

Publication Number Publication Date
JP2014110569A JP2014110569A (ja) 2014-06-12
JP2014110569A5 JP2014110569A5 (enExample) 2015-11-05
JP6065554B2 true JP6065554B2 (ja) 2017-01-25

Family

ID=50824835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012264808A Active JP6065554B2 (ja) 2012-12-03 2012-12-03 比較器

Country Status (2)

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US (1) US8901967B2 (enExample)
JP (1) JP6065554B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9519015B2 (en) * 2014-01-29 2016-12-13 Taiwan Semiconductor Manufacturing Company Limited Rise time and fall time measurement
US9507897B2 (en) * 2014-06-14 2016-11-29 Taiwan Semiconductor Manufacturing Company Limited Circuit arrangement for modeling transistor layout characteristics
US10354113B2 (en) * 2014-10-16 2019-07-16 Crucialtec Co., Ltd. Fingerprint detecting apparatus canceling offset and control method thereof
KR102248931B1 (ko) 2014-12-23 2021-05-06 에스케이하이닉스 주식회사 반도체시스템
US10627838B1 (en) * 2018-12-31 2020-04-21 Texas Instruments Incorporated Comparator with adaptive sense voltage clamp
CN114628497B (zh) * 2022-05-16 2022-08-05 成都蓉矽半导体有限公司 一种集成栅控二极管的碳化硅mosfet元胞版图结构

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3489919A (en) * 1966-03-29 1970-01-13 Ibm Comparator circuit with high input voltage isolation
JPS5649004B1 (enExample) * 1969-09-30 1981-11-19
USB387171I5 (enExample) * 1973-08-09 1975-01-28
US3879640A (en) * 1974-02-11 1975-04-22 Rca Corp Protective diode network for MOS devices
US4180780A (en) * 1978-10-02 1979-12-25 Altec Corporation Input decoupling circuit for transistor differential amplifier
JPS55104766A (en) * 1979-02-07 1980-08-11 Nec Corp Comparator
JPS5890748U (ja) * 1981-12-14 1983-06-20 三菱電機株式会社 電圧比較器の保護回路
JPH01151315A (ja) * 1987-12-08 1989-06-14 Fuji Electric Co Ltd パルス信号入力回路
US5198957A (en) * 1990-07-02 1993-03-30 Motorola, Inc. Transient protection circuit using common drain field effect transistors
US5650906A (en) * 1993-03-24 1997-07-22 Siemens Aktiengesellschaft Circuit arrangement for protecting power semiconductor switches which can be switched on and off against overvoltages
DE19812918C2 (de) * 1998-03-24 2000-04-13 Siemens Ag Schaltungsanordnung für einen Komparator
SE516477C2 (sv) * 1999-04-22 2002-01-22 Ericsson Telefon Ab L M Förstärkare av differentiell typ.
JP3914463B2 (ja) * 2002-05-29 2007-05-16 株式会社日立製作所 コンパレータ
JP4346015B2 (ja) * 2003-06-30 2009-10-14 株式会社リコー 高速コンパレータおよびそれを用いたｄｃ／ｄｃコンバータ
JP4475309B2 (ja) * 2007-09-19 2010-06-09 ヤマハ株式会社 コンパレータ
US8164364B2 (en) * 2010-07-27 2012-04-24 Texas Instruments Incorporated Circuitry and method for preventing base-emitter junction reverse bias in comparator differential input transistor pair

Also Published As

Publication number Publication date
US20140152346A1 (en) 2014-06-05
JP2014110569A (ja) 2014-06-12
US8901967B2 (en) 2014-12-02

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