JP6048043B2 - 基板洗浄方法、基板洗浄装置及び真空処理システム - Google Patents

基板洗浄方法、基板洗浄装置及び真空処理システム Download PDF

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Publication number
JP6048043B2
JP6048043B2 JP2012217539A JP2012217539A JP6048043B2 JP 6048043 B2 JP6048043 B2 JP 6048043B2 JP 2012217539 A JP2012217539 A JP 2012217539A JP 2012217539 A JP2012217539 A JP 2012217539A JP 6048043 B2 JP6048043 B2 JP 6048043B2
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Japan
Prior art keywords
substrate
gas
pressure
carbon dioxide
cleaning
Prior art date
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JP2012217539A
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English (en)
Japanese (ja)
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JP2014072383A (ja
JP2014072383A5 (enExample
Inventor
土橋　和也
和也 土橋
健介 井内
健介 井内
斉藤　美佐子
美佐子 斉藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012217539A priority Critical patent/JP6048043B2/ja
Priority to PCT/JP2013/005079 priority patent/WO2014049959A1/ja
Priority to KR1020157007529A priority patent/KR101735972B1/ko
Priority to US14/430,760 priority patent/US9960056B2/en
Publication of JP2014072383A publication Critical patent/JP2014072383A/ja
Publication of JP2014072383A5 publication Critical patent/JP2014072383A5/ja
Application granted granted Critical
Publication of JP6048043B2 publication Critical patent/JP6048043B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
JP2012217539A 2012-09-28 2012-09-28 基板洗浄方法、基板洗浄装置及び真空処理システム Active JP6048043B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012217539A JP6048043B2 (ja) 2012-09-28 2012-09-28 基板洗浄方法、基板洗浄装置及び真空処理システム
PCT/JP2013/005079 WO2014049959A1 (ja) 2012-09-28 2013-08-28 基板洗浄方法、基板洗浄装置及び真空処理システム
KR1020157007529A KR101735972B1 (ko) 2012-09-28 2013-08-28 기판 세정 방법, 기판 세정 장치 및 진공 처리 시스템
US14/430,760 US9960056B2 (en) 2012-09-28 2013-08-28 Substrate cleaning method, substrate cleaning apparatus and vacuum processing system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012217539A JP6048043B2 (ja) 2012-09-28 2012-09-28 基板洗浄方法、基板洗浄装置及び真空処理システム

Publications (3)

Publication Number Publication Date
JP2014072383A JP2014072383A (ja) 2014-04-21
JP2014072383A5 JP2014072383A5 (enExample) 2015-06-11
JP6048043B2 true JP6048043B2 (ja) 2016-12-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012217539A Active JP6048043B2 (ja) 2012-09-28 2012-09-28 基板洗浄方法、基板洗浄装置及び真空処理システム

Country Status (4)

Country Link
US (1) US9960056B2 (enExample)
JP (1) JP6048043B2 (enExample)
KR (1) KR101735972B1 (enExample)
WO (1) WO2014049959A1 (enExample)

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TWI681437B (zh) * 2014-10-06 2020-01-01 美商東京威力科創Ｆｓｉ股份有限公司 以低溫流體混合物處理基板的系統及方法
US10014191B2 (en) 2014-10-06 2018-07-03 Tel Fsi, Inc. Systems and methods for treating substrates with cryogenic fluid mixtures
US10625280B2 (en) 2014-10-06 2020-04-21 Tel Fsi, Inc. Apparatus for spraying cryogenic fluids
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
JP6545511B2 (ja) 2015-04-10 2019-07-17 株式会社東芝 処理装置
US20160322239A1 (en) * 2015-04-28 2016-11-03 Applied Materials, Inc. Methods and Apparatus for Cleaning a Substrate
JP6618334B2 (ja) * 2015-06-03 2019-12-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置、膜形成ユニット、基板処理方法および膜形成方法
JP6442622B2 (ja) * 2015-11-30 2018-12-19 東京エレクトロン株式会社 基板処理装置のチャンバークリーニング方法
JP6596340B2 (ja) 2016-01-21 2019-10-23 東京エレクトロン株式会社 基板洗浄方法および基板洗浄装置
CN106040668B (zh) * 2016-05-27 2019-06-18 京东方科技集团股份有限公司 用于显示屏的除尘装置、除尘方法及相应的显示装置
JP6998664B2 (ja) 2017-03-23 2022-01-18 東京エレクトロン株式会社 ガスクラスター処理装置およびガスクラスター処理方法
TWI834489B (zh) 2017-12-13 2024-03-01 日商東京威力科創股份有限公司 基板處理裝置
US10854442B2 (en) * 2018-06-29 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Orientation chamber of substrate processing system with purging function
EP3594748B1 (en) 2018-07-09 2021-04-14 C&D Semiconductor Services. Inc Optimal exposure of a bottom surface of a substrate material and/or edges thereof for cleaning in a spin coating device
US20200035484A1 (en) * 2018-07-30 2020-01-30 Lam Research Corporation System and method for chemical and heated wetting of substrates prior to metal plating
US12412736B2 (en) * 2018-09-28 2025-09-09 Lam Research Corporation Methods and systems for managing byproduct material accumulation during plasma-based semiconductor wafer fabrication process
CN110459493B (zh) * 2019-08-21 2022-03-22 北京北方华创微电子装备有限公司 抽真空腔室及抽真空方法
KR102130713B1 (ko) * 2019-12-30 2020-08-05 (주)에프피에이 미세입자 세정용 냉각입자 생성장치 및 그 구동방법
EP4172377A1 (en) * 2020-06-29 2023-05-03 Applied Materials, Inc. Nozzle assembly, evaporation source, deposition system and method for depositing an evaporated material onto a substrate
JP7464467B2 (ja) * 2020-07-01 2024-04-09 株式会社ディスコ ウェーハ洗浄装置
JP7539297B2 (ja) * 2020-10-29 2024-08-23 東京エレクトロン株式会社 基板処理方法および基板処理システム
CN112768376B (zh) * 2020-12-30 2022-12-16 上海至纯洁净系统科技股份有限公司 一种晶圆清洗装置和晶圆清洗方法
US12009246B2 (en) 2021-03-26 2024-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate holder and methods of use

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Also Published As

Publication number Publication date
KR20150058253A (ko) 2015-05-28
WO2014049959A1 (ja) 2014-04-03
US20150255316A1 (en) 2015-09-10
JP2014072383A (ja) 2014-04-21
US9960056B2 (en) 2018-05-01
KR101735972B1 (ko) 2017-05-15

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