WO2014049959A1 - 基板洗浄方法、基板洗浄装置及び真空処理システム - Google Patents

基板洗浄方法、基板洗浄装置及び真空処理システム Download PDF

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Publication number
WO2014049959A1
WO2014049959A1 PCT/JP2013/005079 JP2013005079W WO2014049959A1 WO 2014049959 A1 WO2014049959 A1 WO 2014049959A1 JP 2013005079 W JP2013005079 W JP 2013005079W WO 2014049959 A1 WO2014049959 A1 WO 2014049959A1
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WO
WIPO (PCT)
Prior art keywords
substrate
gas
pressure
wafer
nozzle
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2013/005079
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English (en)
French (fr)
Japanese (ja)
Inventor
土橋　和也
健介 井内
斉藤　美佐子
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US14/430,760 priority Critical patent/US9960056B2/en
Priority to KR1020157007529A priority patent/KR101735972B1/ko
Publication of WO2014049959A1 publication Critical patent/WO2014049959A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B5/00—Cleaning by methods involving the use of air flow or gas flow
    • B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/02087—Cleaning of wafer edges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Definitions

  • the present invention relates to a technique for cleaning the peripheral edge or back surface of a substrate.
  • a multilayer film is stacked on a semiconductor wafer (hereinafter referred to as a wafer), a resist mask is formed on the multilayer film, and each film is formed on each film by a single etching apparatus using the resist mask.
  • a process of forming holes and trenches in the multilayer film with a corresponding etching gas has been studied. However, in that case, the deposit may adhere to the peripheral edge or back surface of the wafer. The factors include adhesion of etching residues during the dry etching process and wraparound of the film forming gas toward the wafer back surface during the film forming process. Such deposits cause generation of particles when the wafer is processed in the next process or when it is transported, and therefore must be removed in advance.
  • the present invention has been made under such a background, and an object of the present invention is to provide a technique that can satisfactorily clean the deposits adhering to the back surface of the peripheral portion of the substrate while suppressing adverse effects on the substrate. There is.
  • the substrate cleaning method of the present invention is a substrate cleaning method for removing deposits adhering to the back surface or peripheral edge of a substrate. Holding the substrate on the holding unit; A cleaning gas containing carbon dioxide gas is discharged into the processing atmosphere from a nozzle portion whose internal pressure is higher than the pressure of the processing atmosphere in which the substrate is placed, and is an aggregate of carbon dioxide gas atoms or molecules by adiabatic expansion. Generating a gas cluster; Irradiating the gas cluster to the back surface or peripheral edge of the substrate to remove deposits, and The pressure inside the nozzle section is a pressure that is slightly lower than the pressure corresponding to the boiling line of carbon dioxide at the gas temperature inside the nozzle, and is a pressure at which a strong carbon dioxide gas cluster is obtained. To do.
  • the substrate cleaning apparatus of the present invention is provided in a processing chamber having an exhaust port, and a holding unit for holding the substrate, A nozzle unit for irradiating the back surface or peripheral part of the substrate with a gas cluster in order to remove deposits attached to the back or peripheral part of the substrate held by the holding part; A gas supply unit for supplying a cleaning gas containing carbon dioxide gas to the nozzle unit; A pressure adjusting unit for adjusting the pressure inside the nozzle unit; A moving mechanism for relatively moving the nozzle part and the substrate holding part, The pressure inside the nozzle part is a pressure slightly lower than the pressure corresponding to the boiling line of carbon dioxide at the gas temperature inside the nozzle part, and a strong carbon dioxide gas cluster is formed. The pressure is set to be obtained.
  • the vacuum processing system of the present invention includes a vacuum transfer chamber for transferring a substrate in a vacuum atmosphere, A vacuum processing module that is connected to the vacuum transfer chamber via a partition valve and performs vacuum processing on the substrate; The above-described substrate cleaning apparatus, connected to the vacuum transfer chamber via a partition valve, for cleaning at least one of the back surface and the peripheral edge of the substrate vacuum-processed by the vacuum processing module.
  • the cleaning gas containing carbon dioxide gas is set to a pressure slightly lower than the pressure corresponding to the boiling line of carbon dioxide at the temperature in the nozzle portion, and carbon dioxide gas clusters (aggregates of carbon dioxide molecules). Is generated.
  • the carbon dioxide gas cluster generated under these conditions is in a state immediately before the phase change to a liquid, so the cluster diameter is large (the number of constituent molecules of the cluster is large), and the molecules are firmly solidified (strongly It is a gas cluster. For this reason, since strong cleaning power is exerted when the gas cluster is irradiated on the peripheral edge or the back surface of the substrate, the deposits can be removed well and the local cleaning can be performed. There is no risk of damage to the surface (surface to be processed on which processing necessary for forming an integrated circuit or the like is performed).
  • a gas cluster is formed by clustering carbon dioxide (CO 2 ), and the obtained gas cluster is applied to the peripheral portion of the substrate or the back surface portion of the substrate to adhere to the portion.
  • CO 2 gas is compressed at a pressure of several MPa, for example, 5 MPa, and the high-pressure gas is released into a vacuum atmosphere through, for example, an orifice. Since the released CO 2 gas expands all at once, the temperature becomes below the condensation temperature by adiabatic expansion. Condensed molecules are combined by van der Waals forces. Therefore, a gas cluster that is an aggregate of CO 2 molecules is generated.
  • the reason why the CO 2 gas is selected is as follows.
  • the CO 2 gas has a specific heat ratio ⁇ of 1.29, for example, Ar gas has a specific heat ratio ⁇ of 1.67.
  • K B is the Boltzmann constant
  • T 0 represents the gas temperature. From the above equation, when the gas temperature is 27 ° C., the kinetic energy per molecule of CO 2 is 115 meV, and the kinetic energy per molecule of Ar is 64.6 meV. Since CO 2 gas has a large energy per molecule, it is possible to generate a gas cluster having a large physical energy.
  • the pressure inside the nozzle unit 6 (primary side of the orifice that is the discharge port of the nozzle unit 6) for obtaining the gas cluster, that is, the pressure before the CO 2 gas undergoes adiabatic expansion is boiling at the temperature of the CO 2 gas.
  • the pressure is slightly lower than the pressure on the line (gas-liquid boundary line), and is a pressure at which a strong gas cluster is obtained. The definition of this pressure will be described later.
  • FIG. 1 is a diagram showing an embodiment of the present invention.
  • a rotary stage 42 that is a holding unit for the wafer W is used.
  • the rotary stage 42 is constituted by, for example, an electrostatic chuck, and adsorbs the center of the back surface of the wafer W to hold it in a horizontal posture.
  • a nozzle portion 6 for generating a cluster is provided at a portion facing the back surface of the wafer W on the rotary stage 42.
  • the nozzle unit 6 includes a cylindrical pressure chamber 67, and a discharge port 66 is provided at the tip of the nozzle unit 6.
  • An orifice is formed at the base end of the discharge port 66, and the discharge port 66 extends in a trumpet shape toward the tip.
  • a gas supply path 50 made of piping is connected to the proximal end side of the nozzle portion 6.
  • the gas supply path 50 is connected to a CO 2 gas supply source 51 and constitutes a gas supply unit.
  • the gas supply unit is provided with a CO 2 gas supply source 51, a flow rate adjustment unit 52, a valve 53, a booster 54, a pressure gauge 55, and a valve 56 from the upstream side. 8 is constituted.
  • the pressure in the pressure chamber 67 is adjusted by adjusting the supply flow rate from the CO 2 gas supply source 51 by the flow rate adjustment unit 52 according to the detection value of the pressure gauge 55.
  • the pressure of CO 2 for generating a gas cluster will be described with reference to FIG. Figure 2 shows CO 2 boiling line (gas-liquid boundary), the region of the upper side is a region in which CO 2 is liquid, the region of the lower side is a region serving as a gas phase.
  • CO 2 is supercritical in the region of 7.38 MPa or more and 31.1 ° C. or more, and the points of 0.52 MPa and ⁇ 56.6 ° C. are triple points.
  • the pressure of the CO 2 gas on the primary side of the orifice of the present invention is set to a pressure that is a little lower than the pressure corresponding to the boiling line at the temperature of the CO 2 gas and that provides a strong gas cluster. .
  • the CO 2 gas set to such a pressure is in a state immediately before the phase change from gas to liquid. Therefore, the gas cluster of CO 2 has a large cluster diameter (the number of constituent molecules of the cluster is large), and it is presumed that the molecules are firmly solidified, and gives a large impact force to the irradiated object.
  • the gas cluster of CO 2 is strong, for example, a rectangular polysilicon pattern having a height of 100 nm, a width of 45 nm, and a length of 600 nm made of polysilicon formed on the surface of a bare silicon wafer is collapsed. be able to.
  • the pressure in the nozzle unit 6 is changed with respect to the actual pattern group to irradiate the gas cluster, and the relationship between the pressure and the presence or absence of collapse of the pattern is acquired.
  • the gas cluster is strong.
  • a strong gas cluster and a non-strong gas cluster formed at a pressure considerably lower than the pressure corresponding to the boiling line are greatly different in impact force as seen in the presence or absence of pattern collapse, There are significant differences in cleaning performance.
  • the specific value of the pressure slightly lower than the pressure corresponding to the boiling line is at least 75% or more of the pressure corresponding to the boiling line, and the pressure at which a strong gas cluster can be obtained in the pressure range. Value.
  • the range of the “slightly low pressure” is shown as a hatched area in order to capture it as an image.
  • the gas cluster generated in this way is discharged straight from the nozzle unit 6 in the axial direction of the nozzle unit 6, and has a peripheral edge of the wafer W with an inclination of, for example, 45 ° with respect to the surface of the wafer W. It will collide with the deposit
  • the gas cluster 3 is decomposed into individual CO 2 molecules, and the deposit 10 is broken and peeled off as shown in FIG. 4 due to the impact caused by the collision of the gas cluster 3 and the impact when the CO 2 molecules are scattered.
  • the peeled off deposits are scattered outward from the wafer, but some of them are scattered upward from the wafer W.
  • the substrate cleaning apparatus of the present invention may be configured to generate a gas cluster by supplying He gas together with CO 2 gas to the nozzle unit 6.
  • the piping of the gas supply path 50 is branched on the upstream side of the booster 54, and is connected to the He supply source 91 via the branch path 94 that is a pipe.
  • the branch path 94 is provided with a flow rate adjusting unit 92 and a valve 93 from upstream.
  • a branch path 95 indicates a branch path on the CO 2 side.
  • the mixing ratio of the CO 2 gas and He gas can be adjusted by, for example, the flow rate adjusting units 52 and 92, and for example, the mixing is performed at a mixing ratio of 1: 9.
  • the pressure in the nozzle unit 6 is set so that the total pressure is slightly lower than the boiling line, for example, 5 MPa at 20 ° C.
  • the gas cluster injection speed can be increased, and a gas cluster with higher energy can be obtained, which is preferable.
  • FIG. 6 is a diagram showing a vacuum processing system having the substrate cleaning apparatus 4 according to the embodiment of the present invention.
  • This vacuum processing system includes an atmospheric transfer chamber 1 having a rectangular planar shape. On one long side of the atmospheric transfer chamber 1, a loading / unloading port for loading / unloading the wafer W is provided.
  • the carry-in / out port includes a plurality of carry-in / out stages 13 on which a plurality of wafers W are stored and on which FOUPs, which are transfer containers, are placed, and doors 14 provided in the respective carry-in / out stages.
  • a hexagonal vacuum transfer chamber 2 having a planar shape is connected to the opposite side of the atmospheric transfer chamber 1 from the carry-in / out stage 13 via two load lock chambers 15 (preliminary vacuum chambers) arranged on the left and right.
  • An alignment module 16 having an orienter for aligning the wafer W is connected to the short side of the atmospheric transfer chamber 1.
  • a transfer mechanism 12 for transferring the wafer W between the load / unload stage 13, the load lock chamber 15 and the alignment module 16 is provided.
  • the vacuum transfer chamber 2 is maintained in a vacuum atmosphere by a vacuum pump (not shown), and the first vacuum chamber 31 that constitutes the processing atmosphere of the etching apparatus 3 and the second atmosphere that constitutes the processing atmosphere of the substrate cleaning apparatus 4.
  • a vacuum chamber 41 is connected.
  • the vacuum transfer chamber 2 is provided with a transfer mechanism 22 for transferring the wafer W between the load lock chamber 15, the alignment module 16, the etching apparatus 3, and the substrate cleaning apparatus 4.
  • G1 to G3 in FIG. 6 are gate valves that form partition valves.
  • the vacuum processing system also includes a control unit 9, which transfers the wafer W, the gate valves G 1 to G 3, and the door 14 by software including a program and a processing recipe stored in the storage unit of the control unit 9. Opening and closing and processing in each of the vacuum chambers 31 and 41 and adjustment of the degree of vacuum are performed.
  • a known apparatus such as a capacitively coupled plasma system or a dielectric coil plasma system can be used.
  • the capacitively coupled plasma method the upper electrode and the lower electrode are opposed to each other in the first vacuum chamber 31, and a high frequency is applied between both electrodes to convert the processing gas into plasma, and ions in the plasma are transferred to the lower electrode.
  • the surface of the wafer W is etched by being drawn into the wafer W on the lower electrode by the applied bias.
  • the substrate cleaning apparatus 4 in which a processing atmosphere is formed by the second vacuum chamber 41 includes a rotating stage 42 including an electrostatic chuck for holding the wafer W in a horizontal posture as shown in FIGS. Yes.
  • the rotating stage 42 is supported by a rotating mechanism 44 which is a moving mechanism fixed to the bottom of the second vacuum chamber 41 via a rotating shaft 43, and rotates the wafer W held by suction around the vertical axis. Can do.
  • a guide rail 61 extending in the horizontal direction (X direction) is provided on the bottom surface of the second vacuum chamber 41, and a moving body that is driven by a ball screw mechanism (not shown) and moves while being guided by the guide rail 61. 62 is provided. As shown in FIG. 9, a support member 63 that extends vertically upward (Z direction in the drawing) and further extends in the Y direction in the drawing is provided on the upper portion of the moving body 62.
  • a nozzle portion 6 (referred to as “first nozzle portion 6” in this example) connected to the cleaning gas supply system 8 shown in FIG. Is provided. The first nozzle unit 6 is provided at a position for irradiating the peripheral portion of the lower surface of the wafer W held on the rotary stage 42.
  • the angle adjustment mechanism 64 is configured by a drive mechanism including a motor having a rotation shaft 65 extending in the Y direction.
  • the first nozzle portion 6 has a peripheral body portion fixed to the tip of the rotation shaft 65, and the rotation angle of the rotation axis is rotated by the angle adjustment mechanism 64, so that the irradiation angle of the gas cluster can be adjusted.
  • a second nozzle portion 90 having the same configuration is also provided above the wafer W. The second nozzle portion 90 is provided so as to irradiate the gas cluster from vertically above toward the edge portion of the wafer W, and is connected to the moving body 82 via the support member 88.
  • the moving body 87 is fixed to a guide rail 86 provided at the bottom of the second vacuum chamber 41, and can move horizontally in the X direction along the guide rail 86.
  • the second nozzle portion 90 is branched from the cleaning gas supply system 8 and connected to a pipe extending in parallel.
  • a purge gas nozzle 80 is provided in the second vacuum chamber 41 on the upper side of the wafer W.
  • a purge gas such as Ar gas or nitrogen gas is provided on the upper surface side of the wafer W. It is comprised so that it may form in a peripheral part.
  • the purge gas nozzle 80 is also connected to the support member 83 and the moving body 82 having the same configuration as the nozzle unit 6.
  • the moving body 82 is fixed to a guide rail 81 provided at the bottom of the second vacuum chamber 41, and can move horizontally in the X direction along the guide rail 81.
  • the purge gas nozzle 80 is connected to a purge gas supply system 85 provided outside the second vacuum chamber 41 via a pipe.
  • the purge gas supply system 85 includes, for example, a purge gas supply source, a flow rate adjusting unit, and a valve.
  • An exhaust pipe 49 is connected to the exhaust port 45 at the bottom of the second vacuum chamber 41.
  • the exhaust pipe 49 is provided with a vacuum pump 47 via a pressure adjusting unit 46 so that the pressure in the second vacuum chamber 41 can be adjusted.
  • a transfer container made of, for example, FOUP containing the wafer W is placed on the carry-in / out stage 13, and the door 14 is opened together with the lid of the transfer container.
  • the wafer W in the transfer container is transferred to the alignment module 16 by the transfer mechanism 12 in the atmospheric transfer chamber 1, and the orientation of the wafer W is adjusted to a preset direction.
  • the wafer W is loaded into the first vacuum chamber 31 including the etching apparatus 3 via the transfer mechanism 12, the load lock chamber 15, and the transfer mechanism 22 in the vacuum transfer chamber 2.
  • an organic film is formed on the surface of the wafer W, and a resist mask is further formed thereon.
  • the resist and the organic system are removed from the peripheral edge of the wafer W, and silicon that is a base material of the wafer W is formed. Is exposed.
  • the organic film is etched by plasma to form a recess corresponding to the pattern of the resist mask. Deposits made of reaction products and the like generated during the etching adhere to the bevel portion (peripheral portion) on the back surface side of the wafer W after the etching.
  • the wafer W is carried into the second vacuum chamber 41 of the substrate cleaning apparatus 4, sucked and held by the rotating stage 42, and rotated by the rotating mechanism 44. Then, the inside of the second vacuum chamber 41 is maintained in a vacuum atmosphere of, for example, 1 Pa to 500 Pa by the pressure adjusting unit 46, and the inside of the nozzle unit 6 is set to the described pressure. Thereafter, the gas cluster is discharged from the nozzle unit 6 to remove the deposits.
  • the deposits are released from the wafer W by the physical impact of the CO 2 gas cluster.
  • the liberated deposits are scattered to the outer side of the wafer W by the purge gas irradiated from the purge gas nozzle 80 toward the peripheral edge on the surface side of the wafer W and the suction action of the vacuum pump 47. It flows downward from W and is discharged out of the second vacuum chamber 41 through the exhaust port 45. In this way, the deposits are removed from the peripheral edge of the wafer W.
  • the gate valve G3 is opened and unloaded from the second vacuum chamber 41 by the transfer mechanism 22 of the vacuum transfer chamber 2.
  • a strong CO 2 gas cluster is obtained by adjusting the pressure of the CO 2 gas in the nozzle unit 6 to a pressure slightly lower than the pressure on the boiling line at the temperature in the nozzle unit 6.
  • the peripheral edge of the wafer W is irradiated. Therefore, the deposits adhering to the peripheral portion of the wafer W can be removed with high certainty, and the peripheral portion of the wafer W can be cleaned well.
  • the deposits cleaned by the gas cluster are not limited to the deposits on the peripheral edge of the wafer W, but may be deposits adhering to the back side of the wafer W.
  • deposits on the back side of the wafer W include deposits that are transferred from the electrostatic chuck when in contact with the electrostatic chuck, and electrostatic that holds the back side of the wafer W when film formation is performed on the wafer W.
  • a film deposition gas flows between the chuck and the wafer W, and a film (attachment) formed on the back side of the wafer W can be listed.
  • the vacuum processing system of the present invention is not limited to an etching apparatus, and may be an apparatus including a vacuum processing apparatus (vacuum processing module) such as a film forming apparatus.
  • a vacuum processing apparatus vacuum processing module
  • a film forming apparatus such as a film forming apparatus.
  • the substrate to be processed is not limited to a circular substrate like the wafer W, and may be a square substrate such as a flat panel display (FPD) substrate.
  • the substrate cleaning process can be performed by configuring the nozzle portions 6 and 90 and the purge gas nozzle 70 so as to move relative to the substrate from one end to the other end along one edge. it can.
  • a shielding plate 89 serving as a shielding member may be provided on the front surface side of the wafer W so as to prevent the adhered deposits from reattaching to the front surface side of the wafer W.
  • the shielding plate 89 has a structure in which the plate state is set vertically, and the planar shape is an arc shape curved along the peripheral edge of the wafer W.
  • the shielding plate 89 is arranged along the peripheral edge of the wafer W at a position closer to the center than the outer edge (outermost line of the peripheral edge) of the wafer W placed on the rotary stage 42. W is provided at a height position (processing position) with a gap.
  • the shielding plate 89 is connected to the processing position and the transfer mechanism in the second processing chamber 41 when the wafer W is transferred by the lifting mechanism 97 installed in the second vacuum chamber 41 via the support arm 96. It can be moved up and down between the retracted position where it does not interfere.
  • FIG. 12 shows how the deposits are scattered when the gas cluster is irradiated from the first nozzle unit 6 on the lower side.
  • the deposit 10 is broken and scattered by the gas cluster 3, and a part of the scattered deposit 10 extends along the peripheral edge of the wafer W. Try to wrap around the surface.
  • the shielding plate 89 is provided, the scattered matter is blocked by the shielding plate 89, bounces off the shielding plate 89, and travels outward of the wafer W. Since the second vacuum chamber 41 is evacuated at the exhaust port 45 at the bottom, the scattered matter goes to the exhaust port 45. Therefore, the reattachment of the deposit 10 peeled off from the peripheral edge of the wafer W to the wafer W surface can be suppressed.
  • the gas cluster is provided with the first nozzle unit 6 and the second nozzle unit 90 so that the irradiation positions of the gas cluster on the wafer W are different from each other in the circumferential direction.
  • the gas clusters may not interfere with each other.
  • the gas cluster may be irradiated from the first nozzle unit 6 and the second nozzle unit 90 at different timings. For example, the gas cluster is irradiated from the second nozzle unit 90 to rotate the wafer W by 360 °. Thereafter, the irradiation from the second nozzle unit 90 may be stopped, and the gas cluster may be irradiated from the first nozzle unit 6 to rotate the wafer 360 °.
  • the present invention includes a purge gas nozzle 80 according to the first embodiment and a shielding plate 89 according to the second embodiment, and deposits peeled off from the peripheral portion of the wafer W are removed from the wafer W by the purge gas. It is also possible to obtain both of the action of blowing off and the action of preventing the shield plate 89 from going around the surface of the wafer W.
  • Pattern groups arranged in a staggered pattern. From above the pattern group, the nozzle portion 6 was arranged so that the surface of the wafer and the axis thereof were orthogonal to each other, and a gas cluster formed of CO 2 was irradiated from the nozzle portion 6 to the pattern group. The distance between the orifice of the nozzle unit 6 and the pattern group (wafer surface) is 1 cm.
  • the temperature inside the nozzle part 6 was set to 20 ° C., and the pressure was set to 3 MPa, 4 MPa and 5 MPa.
  • the state of the pattern group after irradiation with gas clusters at each pressure is shown in FIGS. 14, 15 and 16, which are SEM photographs.
  • the pressure inside the nozzle portion 6 primary side pressure of the orifice
  • the pattern tilt rate is about 5%, indicating that the pattern hardly tilts.
  • the pressure was 5 MPa
  • the pattern tilt rate was 100%.
  • FIG. 17 shows the relationship between the pressure inside the nozzle portion 6 and the pattern tilt rate.
  • the inclination rate of the pattern rapidly increases by bringing the pressure of CO 2 close to the pressure indicated by the gas-liquid boundary line. Therefore, as described above, the pressure that is a little lower than the boiling cleaning pressure at the temperature of the CO 2 gas of the present invention and that provides a strong gas cluster is, for example, when the gas cluster is irradiated onto the above pattern. Further, it is specified by observing the state of the pattern.
  • Example 2 In order to evaluate the present invention, the following evaluation test was performed using the substrate cleaning method of the embodiment. First, a resist film was formed on the wafer W using an organic film, and then an etching process using plasma was performed. Thereafter, the peripheral edge of the wafer W is irradiated with the CO 2 gas cluster (Example) and the gas cluster is not irradiated (Comparative Example) on the peripheral edge of the back surface of the wafer W (diameter 30 cm). The state of was compared. The CO 2 supplied into the nozzle unit 6 was set to a pressure of 5 MPa under an atmospheric temperature of 20 ° C., and the pressure in the second vacuum chamber 41 was set to 30 Pa.
  • FIG. 18 shows the result, and is an observation result by SEM photographs of the respective portions P1 to P6 on the peripheral edge of the wafer W in each of the example and the comparative example.
  • P1 and P2 are set on the back surface of the wafer W
  • P3 and P4 are set on the bevel
  • P5 and P6 are set on the side.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Cleaning Or Drying Semiconductors (AREA)
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PCT/JP2013/005079 2012-09-28 2013-08-28 基板洗浄方法、基板洗浄装置及び真空処理システム Ceased WO2014049959A1 (ja)

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US14/430,760 US9960056B2 (en) 2012-09-28 2013-08-28 Substrate cleaning method, substrate cleaning apparatus and vacuum processing system
KR1020157007529A KR101735972B1 (ko) 2012-09-28 2013-08-28 기판 세정 방법, 기판 세정 장치 및 진공 처리 시스템

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JP2012217539A JP6048043B2 (ja) 2012-09-28 2012-09-28 基板洗浄方法、基板洗浄装置及び真空処理システム
JP2012-217539 2012-09-28

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Cited By (5)

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CN106040668A (zh) * 2016-05-27 2016-10-26 京东方科技集团股份有限公司 用于显示屏的除尘装置、除尘方法及相应的显示装置
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