JP6038902B2 - 熱圧着ボンディングの間ｔｓｖティップを保護するための保護層 - Google Patents

熱圧着ボンディングの間ｔｓｖティップを保護するための保護層 Download PDF

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JP6038902B2
JP6038902B2 JP2014513727A JP2014513727A JP6038902B2 JP 6038902 B2 JP6038902 B2 JP 6038902B2 JP 2014513727 A JP2014513727 A JP 2014513727A JP 2014513727 A JP2014513727 A JP 2014513727A JP 6038902 B2 JP6038902 B2 JP 6038902B2
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tsv
die
bottom side
protective layer
protruding
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JP2014517531A5 (enExample
JP2014517531A (ja
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アラン ウエスト ジェフェリー
アラン ウエスト ジェフェリー
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日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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  • Engineering & Computer Science (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
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US20130249098A1 (en) 2013-09-26
WO2012167027A3 (en) 2013-04-25
US20120306085A1 (en) 2012-12-06
WO2012167027A2 (en) 2012-12-06
CN103718286A (zh) 2014-04-09
US8723330B2 (en) 2014-05-13
US8623763B2 (en) 2014-01-07
EP2783393A4 (en) 2016-03-23
JP2014517531A (ja) 2014-07-17

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