JP6038902B2 - 熱圧着ボンディングの間ｔｓｖティップを保護するための保護層 - Google Patents

熱圧着ボンディングの間ｔｓｖティップを保護するための保護層 Download PDF

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JP6038902B2
JP6038902B2 JP2014513727A JP2014513727A JP6038902B2 JP 6038902 B2 JP6038902 B2 JP 6038902B2 JP 2014513727 A JP2014513727 A JP 2014513727A JP 2014513727 A JP2014513727 A JP 2014513727A JP 6038902 B2 JP6038902 B2 JP 6038902B2
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tsv
die
bottom side
protective layer
protruding
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JP2014517531A5 (enExample
JP2014517531A (ja
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アラン ウエスト ジェフェリー
アラン ウエスト ジェフェリー
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日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H10W70/60—
    • H10W20/0249—
    • H10W20/20—
    • H10W42/121—
    • H10W70/611—
    • H10W72/07202—
    • H10W72/07204—
    • H10W72/07207—
    • H10W72/07232—
    • H10W72/07236—
    • H10W72/07254—
    • H10W72/221—
    • H10W72/222—
    • H10W72/223—
    • H10W72/242—
    • H10W72/244—
    • H10W72/245—
    • H10W72/248—
    • H10W72/252—
    • H10W72/255—
    • H10W74/012—
    • H10W74/15—
    • H10W90/722—
    • H10W90/724—
    • H10W90/734—

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
JP2014513727A 2011-06-01 2012-06-01 熱圧着ボンディングの間ｔｓｖティップを保護するための保護層 Active JP6038902B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/150,899 2011-06-01
US13/150,899 US8623763B2 (en) 2011-06-01 2011-06-01 Protective layer for protecting TSV tips during thermo-compressive bonding
PCT/US2012/040388 WO2012167027A2 (en) 2011-06-01 2012-06-01 Protective layer for protecting tsv tips during thermo-compressive bonding

Publications (3)

Publication Number Publication Date
JP2014517531A JP2014517531A (ja) 2014-07-17
JP2014517531A5 JP2014517531A5 (enExample) 2015-07-16
JP6038902B2 true JP6038902B2 (ja) 2016-12-07

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JP2014513727A Active JP6038902B2 (ja) 2011-06-01 2012-06-01 熱圧着ボンディングの間ｔｓｖティップを保護するための保護層

Country Status (5)

Country Link
US (2) US8623763B2 (enExample)
EP (1) EP2783393A4 (enExample)
JP (1) JP6038902B2 (enExample)
CN (1) CN103718286A (enExample)
WO (1) WO2012167027A2 (enExample)

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US8907494B2 (en) 2013-03-14 2014-12-09 International Business Machines Corporation Electrical leakage reduction in stacked integrated circuits having through-silicon-via (TSV) structures
CN104810319A (zh) * 2014-01-28 2015-07-29 中芯国际集成电路制造(上海)有限公司 晶圆键合的方法
EP2908337B1 (en) * 2014-02-12 2025-11-12 ams AG Semiconductor device with a thermally stable bump contact on a TSV and method of producing such a semiconductor device
CN105917465B (zh) * 2014-07-11 2019-11-19 英特尔公司 可缩放封装架构及相关技术和配置
JP2016039512A (ja) * 2014-08-08 2016-03-22 キヤノン株式会社 電極が貫通配線と繋がったデバイス、及びその製造方法
CN104502903B (zh) * 2014-11-28 2017-12-29 成都嘉纳海威科技有限责任公司 一种基于tsv转接板的多波束接收sip系统
WO2016154526A1 (en) * 2015-03-26 2016-09-29 Board Of Regents, The University Of Texas System Capped through-silicon-vias for 3d integrated circuits
KR102649471B1 (ko) 2016-09-05 2024-03-21 삼성전자주식회사 반도체 패키지 및 그의 제조 방법
US11469194B2 (en) 2018-08-08 2022-10-11 Stmicroelectronics S.R.L. Method of manufacturing a redistribution layer, redistribution layer and integrated circuit including the redistribution layer
US11152333B2 (en) * 2018-10-19 2021-10-19 Micron Technology, Inc. Semiconductor device packages with enhanced heat management and related systems
WO2022147429A1 (en) 2020-12-28 2022-07-07 Invensas Bonding Technologies, Inc. Structures with through-substrate vias and methods for forming the same
KR20230125311A (ko) 2020-12-28 2023-08-29 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 기판-관통 비아를 가지는 구조체 및 이를 형성하기위한 방법
US20250218903A1 (en) * 2023-12-28 2025-07-03 Adeia Semiconductor Bonding Technologies Inc. Via reveal processing and structures

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CN102054787B (zh) * 2010-10-21 2013-08-14 日月光半导体制造股份有限公司 堆栈式封装结构及其制造方法
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Also Published As

Publication number Publication date
EP2783393A4 (en) 2016-03-23
EP2783393A2 (en) 2014-10-01
WO2012167027A2 (en) 2012-12-06
US8723330B2 (en) 2014-05-13
CN103718286A (zh) 2014-04-09
US20120306085A1 (en) 2012-12-06
WO2012167027A3 (en) 2013-04-25
US20130249098A1 (en) 2013-09-26
JP2014517531A (ja) 2014-07-17
US8623763B2 (en) 2014-01-07

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