JP6037707B2 - プラズマ処理装置及びプラズマ処理装置の診断方法 - Google Patents

プラズマ処理装置及びプラズマ処理装置の診断方法 Download PDF

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Publication number
JP6037707B2
JP6037707B2 JP2012174522A JP2012174522A JP6037707B2 JP 6037707 B2 JP6037707 B2 JP 6037707B2 JP 2012174522 A JP2012174522 A JP 2012174522A JP 2012174522 A JP2012174522 A JP 2012174522A JP 6037707 B2 JP6037707 B2 JP 6037707B2
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Japan
Prior art keywords
flow rate
gas
flow
regulator
processing apparatus
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JP2012174522A
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English (en)
Japanese (ja)
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JP2014036024A5 (enExample
JP2014036024A (ja
Inventor
征洋 長谷
征洋 長谷
芳文 小川
芳文 小川
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
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Priority to JP2012174522A priority Critical patent/JP6037707B2/ja
Priority to US13/612,919 priority patent/US9273394B2/en
Publication of JP2014036024A publication Critical patent/JP2014036024A/ja
Publication of JP2014036024A5 publication Critical patent/JP2014036024A5/ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • G05D7/0658—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means the plurality of throttling means being arranged for the control of a single flow from a plurality of converging flows

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2012174522A 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理装置の診断方法 Active JP6037707B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012174522A JP6037707B2 (ja) 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理装置の診断方法
US13/612,919 US9273394B2 (en) 2012-08-07 2012-09-13 Plasma processing apparatus and diagnosis method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012174522A JP6037707B2 (ja) 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理装置の診断方法

Publications (3)

Publication Number Publication Date
JP2014036024A JP2014036024A (ja) 2014-02-24
JP2014036024A5 JP2014036024A5 (enExample) 2015-10-08
JP6037707B2 true JP6037707B2 (ja) 2016-12-07

Family

ID=50065288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012174522A Active JP6037707B2 (ja) 2012-08-07 2012-08-07 プラズマ処理装置及びプラズマ処理装置の診断方法

Country Status (2)

Country Link
US (1) US9273394B2 (enExample)
JP (1) JP6037707B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
WO2016049251A1 (en) 2014-09-24 2016-03-31 The Broad Institute Inc. Delivery, use and therapeutic applications of the crispr-cas systems and compositions for modeling mutations in leukocytes
TWI608119B (zh) * 2016-11-16 2017-12-11 矽碁科技股份有限公司 原子層沉積設備及其抽氣速率控制方法
JP7023372B2 (ja) * 2018-08-28 2022-02-21 株式会社Fuji ガス供給判定方法とプラズマ発生装置
WO2020160093A1 (en) * 2019-01-31 2020-08-06 Lam Research Corporation Multi-channel liquid delivery system for advanced semiconductor applications
KR20210095798A (ko) * 2020-01-23 2021-08-03 에이에스엠 아이피 홀딩 비.브이. 반응 챔버 압력을 안정화하기 위한 시스템 및 방법
WO2021229787A1 (ja) * 2020-05-15 2021-11-18 株式会社日立ハイテク プラズマ処理装置の検査方法
US12467144B2 (en) * 2022-10-27 2025-11-11 Applied Materials, Inc. Methods of correlating zones of processing chambers, and related systems and methods

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0653103A (ja) * 1992-08-03 1994-02-25 Hitachi Ltd 半導体製造装置
JPH11265218A (ja) * 1998-03-18 1999-09-28 Kokusai Electric Co Ltd 自動流量／流量比変換データ校正装置及びガス供給装置
EP1324033B1 (de) * 2001-12-21 2006-09-20 Agilent Technologies, Inc. (a Delaware corporation) Verfahren zur Bereitstellung von Volumenströmen von Fluiden
JP3856730B2 (ja) * 2002-06-03 2006-12-13 東京エレクトロン株式会社 流量制御装置を備えたガス供給設備からのチャンバーへのガス分流供給方法。
US20040050325A1 (en) * 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
JP4502590B2 (ja) * 2002-11-15 2010-07-14 株式会社ルネサステクノロジ 半導体製造装置
CN100454200C (zh) * 2003-06-09 2009-01-21 喜开理株式会社 相对压力控制系统和相对流量控制系统
US7186336B2 (en) * 2003-11-26 2007-03-06 Waters Investments Limited Flow sensing apparatus
JP4959565B2 (ja) * 2004-05-21 2012-06-27 ウオーターズ・テクノロジーズ・コーポレイシヨン 低流量動作を可能にするためのｈｐｌｃ定流量ポンプの閉ループ流量制御
US7896967B2 (en) * 2006-02-06 2011-03-01 Tokyo Electron Limited Gas supply system, substrate processing apparatus and gas supply method
JP2007214406A (ja) * 2006-02-10 2007-08-23 Hitachi Metals Ltd 流量検定機能付質量流量制御装置を搭載した半導体製造装置
DE102006016747A1 (de) * 2006-04-10 2007-10-18 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren und Vorrichtung zur Leckprüfung
DE102008037300A1 (de) * 2008-08-11 2010-02-25 Robert Brockmann Herstellung eines Reingases, insbesondere für die Dichtheitsprüfung an einem druckbeaufschlagten Bauteil
ES2379698T3 (es) * 2008-08-13 2012-04-30 Shell Internationale Research Maatschappij B.V. Método para controlar un caudal de gas entre una pluralidad de flujos de gases
US8305582B2 (en) * 2009-09-01 2012-11-06 Alltech Associates, Inc. Methods and apparatus for analyzing samples and collecting sample fractions
JP5525374B2 (ja) * 2010-08-10 2014-06-18 株式会社エー・シー・イー 流量標準器及びこれを用いる流量校正方法
US8728239B2 (en) * 2011-07-29 2014-05-20 Asm America, Inc. Methods and apparatus for a gas panel with constant gas flow

Also Published As

Publication number Publication date
US20140041804A1 (en) 2014-02-13
JP2014036024A (ja) 2014-02-24
US9273394B2 (en) 2016-03-01

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