JP6036603B2 - 炭化珪素半導体装置の製造方法 - Google Patents
炭化珪素半導体装置の製造方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 192
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 192
- 238000000034 method Methods 0.000 title claims description 72
- 239000004065 semiconductor Substances 0.000 title claims description 65
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 239000000758 substrate Substances 0.000 claims description 121
- 238000005530 etching Methods 0.000 claims description 52
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 238000000137 annealing Methods 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 10
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000460 chlorine Substances 0.000 claims description 9
- 229910052801 chlorine Inorganic materials 0.000 claims description 9
- 239000010410 layer Substances 0.000 description 40
- 210000000746 body region Anatomy 0.000 description 19
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 230000004913 activation Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Description
以下、本発明の実施の形態について図に基づいて説明する。なお、以下の図面において、同一または相当する部分には同一の参照番号を付し、その説明は繰り返さない。また、本明細書中の結晶学的記載においては、個別方位を[]、集合方位を<>、個別面を()、集合面を{}でそれぞれ示している。また結晶学上の指数が負であることは、通常、”−”(バー)を数字の上に付すことによって表現されるが、本明細書中では数字の前に負の符号を付している。
(実施の形態1)
図1および図2を参照して、実施の形態1に係る炭化珪素半導体装置の一例としてのMOSFET1の構造について説明する。
実施の形態1に係る炭化珪素半導体装置1の製造方法によれば、溝部TR1を形成する工程は、塩素を用いて炭化珪素基板10を熱エッチングする工程を含む。これにより、第1の側壁面SW1および第1の底部BT1の損傷が抑制された溝部TR1を形成することができる。それゆえ、炭化珪素基板10を切断する際に、チップに対してチッピングやクラックなどの損傷が発生することを抑制することができる。
次に、図21を参照して、実施の形態2に係るMOSFET1の製造方法について説明する。実施の形態2に係るMOSFET1の製造方法は、第1の凹部TQ1に対する熱エッチングと、第2の凹部TQ2に対する熱エッチングとが同時に実施される点と、第1の凹部TQ1を形成する工程の後であって、炭化珪素基板10を熱エッチングする工程の前に炭化珪素基板10に対して活性化アニールを行う点とにおいて実施の形態1に係るMOSFET1の製造方法と異なっており、他の点は実施の形態1に係るMOSFET1の製造方法とほぼ同様である。以下、実施の形態1に係るMOSFET1の製造方法と異なる点を中心に説明する。
10 炭化珪素基板
10a 第1の主面
10b 第2の主面
20,40,61 マスク層
30 二酸化珪素層
35 ダイシングブレード
60 レジスト膜
80 炭化珪素単結晶基板
81 n型ドリフト領域
82 p型ボディ領域
83 n型ソース領域
84 p型コンタクト領域
85 炭化珪素エピタキシャル層
91 ゲート絶縁膜
92 ゲート電極
93 層間絶縁膜
94 ソース電極
95 ソース配線層
98 ドレイン電極
A1,SW1 第1の側壁面(側壁面)
A2,SW2 第2の側壁面
B1,BT1 第1の底部(底部)
B2,BT2 第2の底部
C1 サブトレンチ
DL ダイシングライン
H1,H2 深さ
IR 素子領域
TQ1 第1の凹部(凹部)
TQ2 第2の凹部
TR1 溝部
TR2 ゲートトレンチ
W1,W2 幅
Claims (6)
- 第1の主面と、前記第1の主面と反対の第2の主面とを有する炭化珪素基板を準備する工程と、
前記炭化珪素基板の前記第1の主面に溝部を形成する工程と、
前記溝部において前記炭化珪素基板を切断する工程とを備え、
前記溝部を形成する工程は、塩素を用いて前記炭化珪素基板を熱エッチングする工程を含む、炭化珪素半導体装置の製造方法。 - 前記溝部を形成する工程は、前記炭化珪素基板を熱エッチングする工程の前に、異方性エッチングにより前記炭化珪素基板の前記第1の主面に凹部を形成する工程を含む、請求項1に記載の炭化珪素半導体装置の製造方法。
- 前記溝部を形成する工程は、前記炭化珪素基板の前記第1の主面に前記凹部を形成する後であって、前記炭化珪素基板を熱エッチングする工程の前に、前記炭化珪素基板を活性化アニールする工程を含む、請求項2に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素基板の前記第1の主面に前記溝部を形成する工程の後であって、前記溝部において前記炭化珪素基板を切断する工程の前に、前記溝部を形成する側壁面および底部に接する二酸化珪素層を形成する工程をさらに備えた、請求項1〜請求項3のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素半導体装置は、ゲートトレンチを有するMOSFETである、請求項1〜請求項4のいずれか1項に記載の炭化珪素半導体装置の製造方法。
- 前記炭化珪素基板を熱エッチングする工程は、前記ゲートトレンチを形成する工程と同時に行われる、請求項5に記載の炭化珪素半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013171374A JP6036603B2 (ja) | 2013-08-21 | 2013-08-21 | 炭化珪素半導体装置の製造方法 |
US14/913,217 US9647081B2 (en) | 2013-08-21 | 2014-07-09 | Method for manufacturing silicon carbide semiconductor device |
PCT/JP2014/068286 WO2015025632A1 (ja) | 2013-08-21 | 2014-07-09 | 炭化珪素半導体装置の製造方法 |
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