JP6030416B2 - アバランシェフォトダイオードおよびその製造方法 - Google Patents

アバランシェフォトダイオードおよびその製造方法 Download PDF

Info

Publication number
JP6030416B2
JP6030416B2 JP2012250945A JP2012250945A JP6030416B2 JP 6030416 B2 JP6030416 B2 JP 6030416B2 JP 2012250945 A JP2012250945 A JP 2012250945A JP 2012250945 A JP2012250945 A JP 2012250945A JP 6030416 B2 JP6030416 B2 JP 6030416B2
Authority
JP
Japan
Prior art keywords
layer
multiplication
substrate
light absorption
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012250945A
Other languages
English (en)
Japanese (ja)
Other versions
JP2014099527A (ja
JP2014099527A5 (enrdf_load_stackoverflow
Inventor
允洋 名田
允洋 名田
好史 村本
好史 村本
横山　春喜
春喜 横山
井田　実
実 井田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
NTT Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, NTT Inc filed Critical Nippon Telegraph and Telephone Corp
Priority to JP2012250945A priority Critical patent/JP6030416B2/ja
Publication of JP2014099527A publication Critical patent/JP2014099527A/ja
Publication of JP2014099527A5 publication Critical patent/JP2014099527A5/ja
Application granted granted Critical
Publication of JP6030416B2 publication Critical patent/JP6030416B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2012250945A 2012-11-15 2012-11-15 アバランシェフォトダイオードおよびその製造方法 Active JP6030416B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012250945A JP6030416B2 (ja) 2012-11-15 2012-11-15 アバランシェフォトダイオードおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012250945A JP6030416B2 (ja) 2012-11-15 2012-11-15 アバランシェフォトダイオードおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2014099527A JP2014099527A (ja) 2014-05-29
JP2014099527A5 JP2014099527A5 (enrdf_load_stackoverflow) 2015-05-28
JP6030416B2 true JP6030416B2 (ja) 2016-11-24

Family

ID=50941297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012250945A Active JP6030416B2 (ja) 2012-11-15 2012-11-15 アバランシェフォトダイオードおよびその製造方法

Country Status (1)

Country Link
JP (1) JP6030416B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101666400B1 (ko) * 2014-10-30 2016-10-14 한국과학기술연구원 포토다이오드 및 포토다이오드 제조 방법
JP2016213362A (ja) * 2015-05-12 2016-12-15 日本電信電話株式会社 アバランシェフォトダイオード
JP6696735B2 (ja) * 2015-06-18 2020-05-20 富士通株式会社 Ｇｅ系光素子及びその製造方法
EP3680941B1 (en) * 2017-09-06 2022-09-28 Nippon Telegraph and Telephone Corporation Avalanche photodiode and method for manufacturing same
CN107749424B (zh) * 2017-10-24 2023-11-07 江门市奥伦德光电有限公司 一种雪崩光电二极管及其制备方法
CN111312835B (zh) * 2020-02-19 2023-04-11 中国电子科技集团公司第四十四研究所 单电子传输雪崩光电二极管结构及制作方法
CN114420783A (zh) * 2022-02-10 2022-04-29 中国科学院上海技术物理研究所 一种基于双雪崩机制的台面型雪崩单光子探测器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60148177A (ja) * 1984-01-12 1985-08-05 Fujitsu Ltd 半導体受光素子
JPS61182272A (ja) * 1985-02-08 1986-08-14 Toshiba Corp 半導体受光素子
JPH02222580A (ja) * 1989-02-23 1990-09-05 Nec Corp 半導体―金属―半導体ヘテロ界面形成方法
US6583482B2 (en) * 2000-12-06 2003-06-24 Alexandre Pauchard Hetero-interface avalance photodetector
JP5228922B2 (ja) * 2007-01-18 2013-07-03 日本電気株式会社 半導体受光素子
JP2010045417A (ja) * 2009-11-27 2010-02-25 Mitsubishi Electric Corp 半導体受光素子

Also Published As

Publication number Publication date
JP2014099527A (ja) 2014-05-29

Similar Documents

Publication Publication Date Title
JP6030416B2 (ja) アバランシェフォトダイオードおよびその製造方法
JP6755285B2 (ja) アバランシェ・フォトダイオード
JP5841021B2 (ja) アバランシェフォトダイオードおよびその製造方法
CN103247708B (zh) 半导体感光元件
JP5432060B2 (ja) アバランシェフォトダイオード
JP5497686B2 (ja) アバランシェフォトダイオード
JP2016213362A (ja) アバランシェフォトダイオード
KR101957801B1 (ko) 플렉서블 이중접합 태양전지
CN106449855A (zh) 单行载流子光电探测器及其制作方法
JP6542732B2 (ja) 受光素子の評価方法および評価用素子
JP7024918B1 (ja) アバランシェフォトダイオード
CN102280516A (zh) 半导体受光元件
CN106384755A (zh) InP基量子阱远红外探测器及其制作方法
JP6705762B2 (ja) アバランシェフォトダイオード
CN111312835B (zh) 单电子传输雪崩光电二极管结构及制作方法
CN118658914A (zh) 基于多量子阱吸收层的单行载流子光电探测器及制备方法
JP5700561B2 (ja) 受光素子
CN110518085B (zh) 锑化物超晶格雪崩光电二极管及其制备方法
JP6563835B2 (ja) 受光素子
JP2011171367A (ja) 半導体受光素子および半導体受光装置
JP5519442B2 (ja) アバランシェフォトダイオード
JPH0316276A (ja) 光検出器
JP2012049235A (ja) フォトダイオード
Culp et al. Gain enhancement of low-temperature GaAs heterojunction MSM photodetectors
CN119855259A (zh) 雪崩光电探测器及其制备方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150413

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150413

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20160217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160315

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160511

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20161018

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20161020

R150 Certificate of patent or registration of utility model

Ref document number: 6030416

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533