JP6029452B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
JP6029452B2
JP6029452B2 JP2012278149A JP2012278149A JP6029452B2 JP 6029452 B2 JP6029452 B2 JP 6029452B2 JP 2012278149 A JP2012278149 A JP 2012278149A JP 2012278149 A JP2012278149 A JP 2012278149A JP 6029452 B2 JP6029452 B2 JP 6029452B2
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Japan
Prior art keywords
purge gas
gas
groove
substrate processing
processing apparatus
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JP2012278149A
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English (en)
Japanese (ja)
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JP2013201421A (ja
Inventor
田中　誠治
誠治 田中
里吉　務
務 里吉
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2012278149A priority Critical patent/JP6029452B2/ja
Priority to CN201310052757.0A priority patent/CN103295935B/zh
Priority to KR1020130017341A priority patent/KR101732215B1/ko
Priority to TW102105932A priority patent/TWI578380B/zh
Publication of JP2013201421A publication Critical patent/JP2013201421A/ja
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Publication of JP6029452B2 publication Critical patent/JP6029452B2/ja
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JP2012278149A 2012-02-22 2012-12-20 基板処理装置 Active JP6029452B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012278149A JP6029452B2 (ja) 2012-02-22 2012-12-20 基板処理装置
CN201310052757.0A CN103295935B (zh) 2012-02-22 2013-02-18 基板处理装置
KR1020130017341A KR101732215B1 (ko) 2012-02-22 2013-02-19 기판 처리 장치
TW102105932A TWI578380B (zh) 2012-02-22 2013-02-21 Substrate processing device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012036845 2012-02-22
JP2012036845 2012-02-22
JP2012278149A JP6029452B2 (ja) 2012-02-22 2012-12-20 基板処理装置

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JP2013201421A JP2013201421A (ja) 2013-10-03
JP6029452B2 true JP6029452B2 (ja) 2016-11-24

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ID=49521361

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JP2012278149A Active JP6029452B2 (ja) 2012-02-22 2012-12-20 基板処理装置

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JP (1) JP6029452B2 (zh)
TW (1) TWI578380B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016101003A1 (de) 2016-01-21 2017-07-27 Aixtron Se CVD-Vorrichtung mit einem als Baugruppe aus dem Reaktorgehäuse entnehmbaren Prozesskammergehäuse
CN116875961A (zh) * 2023-09-01 2023-10-13 上海陛通半导体能源科技股份有限公司 原子层沉积设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06459Y2 (ja) * 1988-06-15 1994-01-05 新日本無線株式会社 縦型エピタキシャル成長装置
JPH03131027A (ja) * 1989-10-17 1991-06-04 Oki Electric Ind Co Ltd 急速加熱処理方法及びその装置
JP3432636B2 (ja) * 1995-04-05 2003-08-04 東京エレクトロン株式会社 処理装置及び処理方法
JP2003003263A (ja) * 2001-06-20 2003-01-08 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置
US20070116873A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
JP2008192642A (ja) * 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
JP4564570B2 (ja) * 2009-03-10 2010-10-20 三井造船株式会社 原子層堆積装置

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TW201351481A (zh) 2013-12-16
TWI578380B (zh) 2017-04-11
JP2013201421A (ja) 2013-10-03

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