JP6021922B2 - 半導体特性を有する化合物、ならびに関連する組成物およびデバイス - Google Patents

半導体特性を有する化合物、ならびに関連する組成物およびデバイス Download PDF

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JP6021922B2
JP6021922B2 JP2014529956A JP2014529956A JP6021922B2 JP 6021922 B2 JP6021922 B2 JP 6021922B2 JP 2014529956 A JP2014529956 A JP 2014529956A JP 2014529956 A JP2014529956 A JP 2014529956A JP 6021922 B2 JP6021922 B2 JP 6021922B2
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dielectric material
compound
mmol
field effect
transistor device
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JP2014531435A (ja
JP2014531435A5 (enExample
Inventor
ハカン ウスタ,
ハカン ウスタ,
ダミアン ブディネ,
ダミアン ブディネ,
ジョーダン クイン,
ジョーダン クイン,
アントニオ ファチェッティ,
アントニオ ファチェッティ,
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Polyera Corp
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Polyera Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D493/00Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04Ortho-condensed systems
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D495/00Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04Ortho-condensed systems
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/464Lateral top-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/484Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/30Organic light-emitting transistors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
JP2014529956A 2011-09-12 2012-09-10 半導体特性を有する化合物、ならびに関連する組成物およびデバイス Expired - Fee Related JP6021922B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161533785P 2011-09-12 2011-09-12
US61/533,785 2011-09-12
PCT/US2012/054502 WO2013039842A1 (en) 2011-09-12 2012-09-10 Compounds having semiconducting properties and related compositions and devices

Publications (3)

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JP2014531435A JP2014531435A (ja) 2014-11-27
JP2014531435A5 JP2014531435A5 (enExample) 2015-10-08
JP6021922B2 true JP6021922B2 (ja) 2016-11-09

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Country Status (6)

Country Link
US (2) US20130062598A1 (enExample)
EP (1) EP2755978A1 (enExample)
JP (1) JP6021922B2 (enExample)
KR (1) KR20140090979A (enExample)
CN (1) CN103958520B (enExample)
WO (1) WO2013039842A1 (enExample)

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TWI688850B (zh) 2013-08-13 2020-03-21 飛利斯有限公司 具有電子顯示器之物品
WO2015031426A1 (en) 2013-08-27 2015-03-05 Polyera Corporation Flexible display and detection of flex state
TWI655807B (zh) 2013-08-27 2019-04-01 飛利斯有限公司 具有可撓曲電子構件之可附接裝置
WO2015038684A1 (en) 2013-09-10 2015-03-19 Polyera Corporation Attachable article with signaling, split display and messaging features
TWI676880B (zh) 2013-12-24 2019-11-11 美商飛利斯有限公司 動態可撓物品
CN106030688B (zh) 2013-12-24 2020-01-24 飞利斯有限公司 可挠性电子物品
EP3087812B9 (en) 2013-12-24 2021-06-09 Flexterra, Inc. Support structures for an attachable, two-dimensional flexible electronic device
WO2015100224A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Flexible electronic display with user interface based on sensed movements
WO2015120025A1 (en) 2014-02-07 2015-08-13 Orthogonal, Inc. Cross-linkable fluorinated photopolymer
US20150227245A1 (en) 2014-02-10 2015-08-13 Polyera Corporation Attachable Device with Flexible Electronic Display Orientation Detection
JP6247560B2 (ja) * 2014-02-20 2017-12-13 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
TWI692272B (zh) 2014-05-28 2020-04-21 美商飛利斯有限公司 在多數表面上具有可撓性電子組件之裝置
JP2016001659A (ja) * 2014-06-11 2016-01-07 株式会社東海理化電機製作所 有機半導体材料
WO2016009890A1 (ja) * 2014-07-18 2016-01-21 富士フイルム株式会社 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法
EP2978037A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978035A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
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WO2016138356A1 (en) 2015-02-26 2016-09-01 Polyera Corporation Attachable device having a flexible electronic component
JP6155401B2 (ja) * 2015-03-23 2017-06-28 日本化薬株式会社 有機化合物、有機半導体材料、有機薄膜及びその製造方法、有機半導体組成物、並びに有機半導体デバイス
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
JP6526585B2 (ja) * 2016-02-29 2019-06-05 日本化薬株式会社 縮合多環芳香族化合物及びその用途
US11198698B2 (en) * 2016-02-29 2021-12-14 National Institute Of Advanced Industrial Science And Technology Organic semiconductor composition, organic thin film comprising same, and use thereof
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ
KR102553881B1 (ko) 2018-06-01 2023-07-07 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

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Also Published As

Publication number Publication date
CN103958520A (zh) 2014-07-30
JP2014531435A (ja) 2014-11-27
US20130062598A1 (en) 2013-03-14
US20160351832A1 (en) 2016-12-01
US9911927B2 (en) 2018-03-06
CN103958520B (zh) 2017-03-22
EP2755978A1 (en) 2014-07-23
WO2013039842A1 (en) 2013-03-21
KR20140090979A (ko) 2014-07-18

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