JP2014531435A5 - - Google Patents

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Publication number
JP2014531435A5
JP2014531435A5 JP2014529956A JP2014529956A JP2014531435A5 JP 2014531435 A5 JP2014531435 A5 JP 2014531435A5 JP 2014529956 A JP2014529956 A JP 2014529956A JP 2014529956 A JP2014529956 A JP 2014529956A JP 2014531435 A5 JP2014531435 A5 JP 2014531435A5
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JP
Japan
Prior art keywords
dielectric material
item
transistor device
field effect
compound
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JP2014529956A
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English (en)
Japanese (ja)
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JP2014531435A (ja
JP6021922B2 (ja
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Priority claimed from PCT/US2012/054502 external-priority patent/WO2013039842A1/en
Publication of JP2014531435A publication Critical patent/JP2014531435A/ja
Publication of JP2014531435A5 publication Critical patent/JP2014531435A5/ja
Application granted granted Critical
Publication of JP6021922B2 publication Critical patent/JP6021922B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014529956A 2011-09-12 2012-09-10 半導体特性を有する化合物、ならびに関連する組成物およびデバイス Expired - Fee Related JP6021922B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161533785P 2011-09-12 2011-09-12
US61/533,785 2011-09-12
PCT/US2012/054502 WO2013039842A1 (en) 2011-09-12 2012-09-10 Compounds having semiconducting properties and related compositions and devices

Publications (3)

Publication Number Publication Date
JP2014531435A JP2014531435A (ja) 2014-11-27
JP2014531435A5 true JP2014531435A5 (enExample) 2015-10-08
JP6021922B2 JP6021922B2 (ja) 2016-11-09

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ID=47116279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014529956A Expired - Fee Related JP6021922B2 (ja) 2011-09-12 2012-09-10 半導体特性を有する化合物、ならびに関連する組成物およびデバイス

Country Status (6)

Country Link
US (2) US20130062598A1 (enExample)
EP (1) EP2755978A1 (enExample)
JP (1) JP6021922B2 (enExample)
KR (1) KR20140090979A (enExample)
CN (1) CN103958520B (enExample)
WO (1) WO2013039842A1 (enExample)

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CN104854111A (zh) 2012-12-03 2015-08-19 巴斯夫欧洲公司 用于有机电子器件的杂并苯化合物
KR102101242B1 (ko) * 2013-01-22 2020-04-17 니폰 가야꾸 가부시끼가이샤 용액 프로세스용 유기 반도체 재료 및 유기 반도체 디바이스
TWI688850B (zh) 2013-08-13 2020-03-21 飛利斯有限公司 具有電子顯示器之物品
CN105793781B (zh) 2013-08-27 2019-11-05 飞利斯有限公司 具有可挠曲电子构件的可附接装置
WO2015031426A1 (en) 2013-08-27 2015-03-05 Polyera Corporation Flexible display and detection of flex state
WO2015038684A1 (en) 2013-09-10 2015-03-19 Polyera Corporation Attachable article with signaling, split display and messaging features
WO2015100333A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Support structures for an attachable, two-dimensional flexible electronic device
WO2015100396A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Support structures for a flexible electronic component
KR20160103072A (ko) 2013-12-24 2016-08-31 폴리에라 코퍼레이션 가요성 전자 부품용 지지 구조체
WO2015100224A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Flexible electronic display with user interface based on sensed movements
KR20160118340A (ko) 2014-02-07 2016-10-11 올싸거널 인코포레이티드 교차-결합 가능한 플루오르화된 포토폴리머
US20150227245A1 (en) 2014-02-10 2015-08-13 Polyera Corporation Attachable Device with Flexible Electronic Display Orientation Detection
JP6247560B2 (ja) * 2014-02-20 2017-12-13 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
WO2015184045A2 (en) 2014-05-28 2015-12-03 Polyera Corporation Device with flexible electronic components on multiple surfaces
JP2016001659A (ja) * 2014-06-11 2016-01-07 株式会社東海理化電機製作所 有機半導体材料
WO2016009890A1 (ja) * 2014-07-18 2016-01-21 富士フイルム株式会社 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法
EP2978037A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
EP2978035A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
JP6742983B2 (ja) 2014-07-24 2020-08-19 フレックステッラ・インコーポレイテッド 有機エレクトロルミネッセンストランジスタ
WO2016138356A1 (en) 2015-02-26 2016-09-01 Polyera Corporation Attachable device having a flexible electronic component
JP6155401B2 (ja) * 2015-03-23 2017-06-28 日本化薬株式会社 有機化合物、有機半導体材料、有機薄膜及びその製造方法、有機半導体組成物、並びに有機半導体デバイス
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
US11198698B2 (en) 2016-02-29 2021-12-14 National Institute Of Advanced Industrial Science And Technology Organic semiconductor composition, organic thin film comprising same, and use thereof
JP6526585B2 (ja) * 2016-02-29 2019-06-05 日本化薬株式会社 縮合多環芳香族化合物及びその用途
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ
KR102553881B1 (ko) * 2018-06-01 2023-07-07 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

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JP4832304B2 (ja) * 2004-08-31 2011-12-07 出光興産株式会社 芳香族アミン誘導体及びそれを用いた有機エレクトロルミネッセンス素子
WO2006086082A2 (en) 2004-12-23 2006-08-17 Northwestern University Siloxane-polymer dielectric compositions and related organic field-effect transistors
WO2006077888A1 (ja) * 2005-01-19 2006-07-27 National University Of Corporation Hiroshima University 新規な縮合多環芳香族化合物およびその利用
WO2007075748A2 (en) 2005-12-20 2007-07-05 Northwestern University Intercalated superlattice compositions and related methods for modulating dielectric property
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WO2008050726A1 (en) * 2006-10-25 2008-05-02 Hiroshima University Novel fused-ring aromatic compound, process for producing the same, and use thereof
KR20080100982A (ko) 2007-05-15 2008-11-21 삼성전자주식회사 헤테로아센 화합물, 이를 포함하는 유기 박막 및 상기박막을 포함하는 전자 소자
JP5101939B2 (ja) * 2007-07-12 2012-12-19 山本化成株式会社 有機トランジスタ
JP5481850B2 (ja) * 2008-01-23 2014-04-23 東ソー株式会社 ヘテロアセン誘導体、その前駆化合物及びそれらの製造方法
JP5487655B2 (ja) * 2008-04-17 2014-05-07 株式会社リコー [1]ベンゾチエノ[3,2‐b][1]ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス
JP5428104B2 (ja) * 2008-05-23 2014-02-26 日本化薬株式会社 有機半導体組成物
JP2009302328A (ja) * 2008-06-13 2009-12-24 Nippon Kayaku Co Ltd 有機トランジスタ、およびこれが用いられた有機半導体素子
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JP5477978B2 (ja) * 2009-02-27 2014-04-23 日本化薬株式会社 電界効果トランジスタ
KR20120090939A (ko) * 2009-07-10 2012-08-17 고쿠리츠 다이가쿠 호우징 나고야 다이가쿠 치환된 벤조찰코게노아센 화합물, 그 화합물을 함유하는 박막 및 그 박막을 함유하는 유기 반도체 장치
JP5655301B2 (ja) * 2009-12-22 2015-01-21 東ソー株式会社 有機半導体材料
US8643001B2 (en) 2010-12-23 2014-02-04 Samsung Electronics Co. Ltd. Semiconductor composition

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