KR20140090979A - 반도성을 가지는 화합물과 이와 관련된 조성물 및 소자 - Google Patents

반도성을 가지는 화합물과 이와 관련된 조성물 및 소자 Download PDF

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KR20140090979A
KR20140090979A KR1020147009221A KR20147009221A KR20140090979A KR 20140090979 A KR20140090979 A KR 20140090979A KR 1020147009221 A KR1020147009221 A KR 1020147009221A KR 20147009221 A KR20147009221 A KR 20147009221A KR 20140090979 A KR20140090979 A KR 20140090979A
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formula
linear
compound
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Korean (ko)
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하칸 우스타
다미엥 부디네
조단 퀸
안토니오 파체티
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폴리에라 코퍼레이션
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
KR1020147009221A 2011-09-12 2012-09-10 반도성을 가지는 화합물과 이와 관련된 조성물 및 소자 Withdrawn KR20140090979A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161533785P 2011-09-12 2011-09-12
US61/533,785 2011-09-12
PCT/US2012/054502 WO2013039842A1 (en) 2011-09-12 2012-09-10 Compounds having semiconducting properties and related compositions and devices

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KR20140090979A true KR20140090979A (ko) 2014-07-18

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KR1020147009221A Withdrawn KR20140090979A (ko) 2011-09-12 2012-09-10 반도성을 가지는 화합물과 이와 관련된 조성물 및 소자

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US (2) US20130062598A1 (enExample)
EP (1) EP2755978A1 (enExample)
JP (1) JP6021922B2 (enExample)
KR (1) KR20140090979A (enExample)
CN (1) CN103958520B (enExample)
WO (1) WO2013039842A1 (enExample)

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KR20150108918A (ko) * 2013-01-22 2015-09-30 니폰 가야꾸 가부시끼가이샤 용액 프로세스용 유기 반도체 재료 및 유기 반도체 디바이스
KR20190137487A (ko) * 2018-06-01 2019-12-11 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

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US9780315B2 (en) 2012-12-03 2017-10-03 Basf Se Heteroacene compounds for organic electronics
TWI688850B (zh) 2013-08-13 2020-03-21 飛利斯有限公司 具有電子顯示器之物品
TWI655807B (zh) 2013-08-27 2019-04-01 飛利斯有限公司 具有可撓曲電子構件之可附接裝置
WO2015031426A1 (en) 2013-08-27 2015-03-05 Polyera Corporation Flexible display and detection of flex state
WO2015038684A1 (en) 2013-09-10 2015-03-19 Polyera Corporation Attachable article with signaling, split display and messaging features
KR20160103083A (ko) 2013-12-24 2016-08-31 폴리에라 코퍼레이션 탈부착형 2차원 플렉서블 전자 기기용 지지 구조물
WO2015100224A1 (en) 2013-12-24 2015-07-02 Polyera Corporation Flexible electronic display with user interface based on sensed movements
KR20160103073A (ko) 2013-12-24 2016-08-31 폴리에라 코퍼레이션 가요성 전자 부품용 지지대 구조물
TWI653522B (zh) 2013-12-24 2019-03-11 美商飛利斯有限公司 動態可撓物品
KR20160118340A (ko) 2014-02-07 2016-10-11 올싸거널 인코포레이티드 교차-결합 가능한 플루오르화된 포토폴리머
US20150227245A1 (en) 2014-02-10 2015-08-13 Polyera Corporation Attachable Device with Flexible Electronic Display Orientation Detection
JP6247560B2 (ja) * 2014-02-20 2017-12-13 富士フイルム株式会社 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料
US10261634B2 (en) 2014-03-27 2019-04-16 Flexterra, Inc. Infrared touch system for flexible displays
WO2015184045A2 (en) 2014-05-28 2015-12-03 Polyera Corporation Device with flexible electronic components on multiple surfaces
WO2015183567A1 (en) 2014-05-28 2015-12-03 Polyera Corporation Low power display updates
JP2016001659A (ja) * 2014-06-11 2016-01-07 株式会社東海理化電機製作所 有機半導体材料
WO2016009890A1 (ja) 2014-07-18 2016-01-21 富士フイルム株式会社 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法
EP2978037A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
CN111146352B (zh) 2014-07-24 2022-10-21 飞利斯有限公司 有机电致发光晶体管
EP2978035A1 (en) * 2014-07-24 2016-01-27 E.T.C. S.r.l. Organic electroluminescent transistor
WO2016138356A1 (en) 2015-02-26 2016-09-01 Polyera Corporation Attachable device having a flexible electronic component
WO2016152889A1 (ja) * 2015-03-23 2016-09-29 日本化薬株式会社 有機化合物、有機半導体材料、有機薄膜及びその製造方法、有機半導体組成物、並びに有機半導体デバイス
US10254795B2 (en) 2015-05-06 2019-04-09 Flexterra, Inc. Attachable, flexible display device with flexible tail
JP6800469B2 (ja) * 2016-02-29 2020-12-16 国立研究開発法人産業技術総合研究所 有機半導体組成物及びそれらからなる有機薄膜、並びにその用途
JP6526585B2 (ja) * 2016-02-29 2019-06-05 日本化薬株式会社 縮合多環芳香族化合物及びその用途
JP6833445B2 (ja) * 2016-10-18 2021-02-24 山本化成株式会社 有機トランジスタ

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KR20080100982A (ko) 2007-05-15 2008-11-21 삼성전자주식회사 헤테로아센 화합물, 이를 포함하는 유기 박막 및 상기박막을 포함하는 전자 소자
JP5101939B2 (ja) * 2007-07-12 2012-12-19 山本化成株式会社 有機トランジスタ
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JP5487655B2 (ja) * 2008-04-17 2014-05-07 株式会社リコー ［１］ベンゾチエノ［３，２‐ｂ］［１］ベンゾチオフェン化合物およびその製造方法、それを用いた有機電子デバイス
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JP2009302328A (ja) * 2008-06-13 2009-12-24 Nippon Kayaku Co Ltd 有機トランジスタ、およびこれが用いられた有機半導体素子
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JP5655301B2 (ja) * 2009-12-22 2015-01-21 東ソー株式会社 有機半導体材料
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150108918A (ko) * 2013-01-22 2015-09-30 니폰 가야꾸 가부시끼가이샤 용액 프로세스용 유기 반도체 재료 및 유기 반도체 디바이스
KR20190137487A (ko) * 2018-06-01 2019-12-11 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치

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US20160351832A1 (en) 2016-12-01
US9911927B2 (en) 2018-03-06
EP2755978A1 (en) 2014-07-23
US20130062598A1 (en) 2013-03-14
JP6021922B2 (ja) 2016-11-09
CN103958520B (zh) 2017-03-22
JP2014531435A (ja) 2014-11-27
CN103958520A (zh) 2014-07-30
WO2013039842A1 (en) 2013-03-21

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