CN103958520B - 具有半导体特性的化合物及相关组合物和装置 - Google Patents
具有半导体特性的化合物及相关组合物和装置 Download PDFInfo
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- CN103958520B CN103958520B CN201280052522.5A CN201280052522A CN103958520B CN 103958520 B CN103958520 B CN 103958520B CN 201280052522 A CN201280052522 A CN 201280052522A CN 103958520 B CN103958520 B CN 103958520B
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- 0 *C(*)c(cc1)cc2c1c([s]c(c1c3)cc4c3cc(cccc3)c3c4)c1[o]2 Chemical compound *C(*)c(cc1)cc2c1c([s]c(c1c3)cc4c3cc(cccc3)c3c4)c1[o]2 0.000 description 7
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
- C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
- C07D493/04—Ortho-condensed systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
- C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
- C07D495/04—Ortho-condensed systems
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6574—Polycyclic condensed heteroaromatic hydrocarbons comprising only oxygen in the heteroaromatic polycondensed ring system, e.g. cumarine dyes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161533785P | 2011-09-12 | 2011-09-12 | |
| US61/533,785 | 2011-09-12 | ||
| PCT/US2012/054502 WO2013039842A1 (en) | 2011-09-12 | 2012-09-10 | Compounds having semiconducting properties and related compositions and devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103958520A CN103958520A (zh) | 2014-07-30 |
| CN103958520B true CN103958520B (zh) | 2017-03-22 |
Family
ID=47116279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280052522.5A Active CN103958520B (zh) | 2011-09-12 | 2012-09-10 | 具有半导体特性的化合物及相关组合物和装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20130062598A1 (enExample) |
| EP (1) | EP2755978A1 (enExample) |
| JP (1) | JP6021922B2 (enExample) |
| KR (1) | KR20140090979A (enExample) |
| CN (1) | CN103958520B (enExample) |
| WO (1) | WO2013039842A1 (enExample) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104854111A (zh) | 2012-12-03 | 2015-08-19 | 巴斯夫欧洲公司 | 用于有机电子器件的杂并苯化合物 |
| TW201444852A (zh) * | 2013-01-22 | 2014-12-01 | Nippon Kayaku Kk | 溶液製程用之有機半導體材料以及有機半導體元件 |
| WO2015023804A1 (en) | 2013-08-13 | 2015-02-19 | Polyera Corporation | Optimization of electronic display areas |
| CN105793781B (zh) | 2013-08-27 | 2019-11-05 | 飞利斯有限公司 | 具有可挠曲电子构件的可附接装置 |
| WO2015031426A1 (en) | 2013-08-27 | 2015-03-05 | Polyera Corporation | Flexible display and detection of flex state |
| WO2015038684A1 (en) | 2013-09-10 | 2015-03-19 | Polyera Corporation | Attachable article with signaling, split display and messaging features |
| TWI653522B (zh) | 2013-12-24 | 2019-03-11 | 美商飛利斯有限公司 | 動態可撓物品 |
| EP3087812B9 (en) | 2013-12-24 | 2021-06-09 | Flexterra, Inc. | Support structures for an attachable, two-dimensional flexible electronic device |
| WO2015100396A1 (en) | 2013-12-24 | 2015-07-02 | Polyera Corporation | Support structures for a flexible electronic component |
| WO2015100224A1 (en) | 2013-12-24 | 2015-07-02 | Polyera Corporation | Flexible electronic display with user interface based on sensed movements |
| CN106662808A (zh) | 2014-02-07 | 2017-05-10 | 正交公司 | 可交联的氟化光聚合物 |
| US20150227245A1 (en) | 2014-02-10 | 2015-08-13 | Polyera Corporation | Attachable Device with Flexible Electronic Display Orientation Detection |
| JP6247560B2 (ja) * | 2014-02-20 | 2017-12-13 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機半導体薄膜および有機半導体材料 |
| US10261634B2 (en) | 2014-03-27 | 2019-04-16 | Flexterra, Inc. | Infrared touch system for flexible displays |
| WO2015183567A1 (en) | 2014-05-28 | 2015-12-03 | Polyera Corporation | Low power display updates |
| WO2015184045A2 (en) | 2014-05-28 | 2015-12-03 | Polyera Corporation | Device with flexible electronic components on multiple surfaces |
| JP2016001659A (ja) * | 2014-06-11 | 2016-01-07 | 株式会社東海理化電機製作所 | 有機半導体材料 |
| JP6243032B2 (ja) * | 2014-07-18 | 2017-12-06 | 富士フイルム株式会社 | 有機半導体膜形成用組成物、並びに、有機半導体素子及びその製造方法 |
| WO2016014980A1 (en) | 2014-07-24 | 2016-01-28 | E.T.C.S.R.L. | Organic electroluminescent transistor |
| EP2978037A1 (en) * | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| EP2978035A1 (en) * | 2014-07-24 | 2016-01-27 | E.T.C. S.r.l. | Organic electroluminescent transistor |
| WO2016138356A1 (en) | 2015-02-26 | 2016-09-01 | Polyera Corporation | Attachable device having a flexible electronic component |
| KR101928284B1 (ko) | 2015-03-23 | 2018-12-12 | 닛뽄 가야쿠 가부시키가이샤 | 유기 화합물, 유기 반도체 재료, 유기 박막 및 그의 제조 방법, 유기 반도체 조성물, 그리고 유기 반도체 디바이스 |
| US10254795B2 (en) | 2015-05-06 | 2019-04-09 | Flexterra, Inc. | Attachable, flexible display device with flexible tail |
| JP6526585B2 (ja) * | 2016-02-29 | 2019-06-05 | 日本化薬株式会社 | 縮合多環芳香族化合物及びその用途 |
| WO2017150474A1 (ja) * | 2016-02-29 | 2017-09-08 | 国立研究開発法人産業技術総合研究所 | 有機半導体組成物及びそれらからなる有機薄膜、並びにその用途 |
| JP6833445B2 (ja) * | 2016-10-18 | 2021-02-24 | 山本化成株式会社 | 有機トランジスタ |
| KR102553881B1 (ko) | 2018-06-01 | 2023-07-07 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 이를 포함하는 박막 트랜지스터 표시판 및 전자 장치 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2098527A1 (en) * | 2006-10-25 | 2009-09-09 | Hiroshima University | Novel fused-ring aromatic compound, process for producing the same, and use thereof |
| CN101529609A (zh) * | 2006-10-20 | 2009-09-09 | 日本化药株式会社 | 场效应晶体管 |
| JP2009283786A (ja) * | 2008-05-23 | 2009-12-03 | Hiroshima Univ | 有機半導体組成物 |
| JP2009302328A (ja) * | 2008-06-13 | 2009-12-24 | Nippon Kayaku Co Ltd | 有機トランジスタ、およびこれが用いられた有機半導体素子 |
| WO2010098372A1 (ja) * | 2009-02-27 | 2010-09-02 | 国立大学法人広島大学 | 電界効果トランジスタ |
| WO2011004869A1 (ja) * | 2009-07-10 | 2011-01-13 | 住友化学株式会社 | 置換ベンゾカルコゲノアセン化合物、該化合物を含有する薄膜及び該薄膜を含有する有機半導体デバイス |
| US20110024731A1 (en) * | 2005-01-19 | 2011-02-03 | National University Of Corp. Hiroshima University | Novel condensed polycyclic aromatic compound and use thereof |
| CN102007131A (zh) * | 2008-04-17 | 2011-04-06 | 株式会社理光 | [1]苯并噻吩并[3,2-b][1]苯并噻吩化合物及其制法、和用其的有机电子器件 |
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| JP4832304B2 (ja) * | 2004-08-31 | 2011-12-07 | 出光興産株式会社 | 芳香族アミン誘導体及びそれを用いた有機エレクトロルミネッセンス素子 |
| US7605394B2 (en) | 2004-12-23 | 2009-10-20 | Northwestern University | Siloxane-polymer dielectric compositions and related organic field-effect transistors |
| US7678463B2 (en) | 2005-12-20 | 2010-03-16 | Northwestern University | Intercalated superlattice compositions and related methods for modulating dielectric property |
| KR20080100982A (ko) | 2007-05-15 | 2008-11-21 | 삼성전자주식회사 | 헤테로아센 화합물, 이를 포함하는 유기 박막 및 상기박막을 포함하는 전자 소자 |
| JP5101939B2 (ja) * | 2007-07-12 | 2012-12-19 | 山本化成株式会社 | 有機トランジスタ |
| JP5481850B2 (ja) * | 2008-01-23 | 2014-04-23 | 東ソー株式会社 | ヘテロアセン誘導体、その前駆化合物及びそれらの製造方法 |
| WO2010024388A1 (ja) * | 2008-08-29 | 2010-03-04 | 出光興産株式会社 | 有機薄膜トランジスタ用化合物及びそれを用いた有機薄膜トランジスタ |
| JP5655301B2 (ja) * | 2009-12-22 | 2015-01-21 | 東ソー株式会社 | 有機半導体材料 |
| US8643001B2 (en) | 2010-12-23 | 2014-02-04 | Samsung Electronics Co. Ltd. | Semiconductor composition |
-
2012
- 2012-09-10 WO PCT/US2012/054502 patent/WO2013039842A1/en not_active Ceased
- 2012-09-10 JP JP2014529956A patent/JP6021922B2/ja not_active Expired - Fee Related
- 2012-09-10 KR KR1020147009221A patent/KR20140090979A/ko not_active Withdrawn
- 2012-09-10 EP EP12780903.6A patent/EP2755978A1/en not_active Withdrawn
- 2012-09-10 CN CN201280052522.5A patent/CN103958520B/zh active Active
- 2012-09-10 US US13/608,976 patent/US20130062598A1/en not_active Abandoned
-
2016
- 2016-04-25 US US15/137,939 patent/US9911927B2/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110024731A1 (en) * | 2005-01-19 | 2011-02-03 | National University Of Corp. Hiroshima University | Novel condensed polycyclic aromatic compound and use thereof |
| CN101529609A (zh) * | 2006-10-20 | 2009-09-09 | 日本化药株式会社 | 场效应晶体管 |
| EP2098527A1 (en) * | 2006-10-25 | 2009-09-09 | Hiroshima University | Novel fused-ring aromatic compound, process for producing the same, and use thereof |
| CN102007131A (zh) * | 2008-04-17 | 2011-04-06 | 株式会社理光 | [1]苯并噻吩并[3,2-b][1]苯并噻吩化合物及其制法、和用其的有机电子器件 |
| JP2009283786A (ja) * | 2008-05-23 | 2009-12-03 | Hiroshima Univ | 有機半導体組成物 |
| JP2009302328A (ja) * | 2008-06-13 | 2009-12-24 | Nippon Kayaku Co Ltd | 有機トランジスタ、およびこれが用いられた有機半導体素子 |
| WO2010098372A1 (ja) * | 2009-02-27 | 2010-09-02 | 国立大学法人広島大学 | 電界効果トランジスタ |
| WO2011004869A1 (ja) * | 2009-07-10 | 2011-01-13 | 住友化学株式会社 | 置換ベンゾカルコゲノアセン化合物、該化合物を含有する薄膜及び該薄膜を含有する有機半導体デバイス |
Non-Patent Citations (1)
| Title |
|---|
| Polycyclic aromatic hydrocarbons.Part XVII.Completion of the Synthesis of the Twelve Monomethyl-1:2-benzanthracenes;J.W.Cook,et al;《Journal of the chemical society(Resumed)》;19381231;第505-513页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US9911927B2 (en) | 2018-03-06 |
| US20130062598A1 (en) | 2013-03-14 |
| WO2013039842A1 (en) | 2013-03-21 |
| JP6021922B2 (ja) | 2016-11-09 |
| US20160351832A1 (en) | 2016-12-01 |
| CN103958520A (zh) | 2014-07-30 |
| EP2755978A1 (en) | 2014-07-23 |
| KR20140090979A (ko) | 2014-07-18 |
| JP2014531435A (ja) | 2014-11-27 |
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Effective date of registration: 20170221 Address after: Illinois Applicant after: Feilisi Co. Ltd. Address before: Illinois Applicant before: Polyera Corp. |
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