JP6018757B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
JP6018757B2
JP6018757B2 JP2012008019A JP2012008019A JP6018757B2 JP 6018757 B2 JP6018757 B2 JP 6018757B2 JP 2012008019 A JP2012008019 A JP 2012008019A JP 2012008019 A JP2012008019 A JP 2012008019A JP 6018757 B2 JP6018757 B2 JP 6018757B2
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Japan
Prior art keywords
electromagnet
group
electromagnets
processing apparatus
electromagnet group
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JP2012008019A
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English (en)
Japanese (ja)
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JP2013149722A (ja
JP2013149722A5 (enExample
Inventor
聡裕 横田
聡裕 横田
悦治 伊藤
悦治 伊藤
慎司 檜森
慎司 檜森
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Priority to JP2012008019A priority Critical patent/JP6018757B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US14/370,579 priority patent/US20140346040A1/en
Priority to KR1020197025510A priority patent/KR102148005B1/ko
Priority to PCT/JP2013/051362 priority patent/WO2013108930A1/ja
Priority to KR1020147018433A priority patent/KR20140114821A/ko
Priority to TW102101723A priority patent/TWI559818B/zh
Publication of JP2013149722A publication Critical patent/JP2013149722A/ja
Publication of JP2013149722A5 publication Critical patent/JP2013149722A5/ja
Application granted granted Critical
Publication of JP6018757B2 publication Critical patent/JP6018757B2/ja
Priority to US15/378,590 priority patent/US10651012B2/en
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Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2012008019A 2012-01-18 2012-01-18 基板処理装置 Active JP6018757B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2012008019A JP6018757B2 (ja) 2012-01-18 2012-01-18 基板処理装置
KR1020197025510A KR102148005B1 (ko) 2012-01-18 2013-01-17 기판 처리 방법
PCT/JP2013/051362 WO2013108930A1 (ja) 2012-01-18 2013-01-17 基板処理装置
KR1020147018433A KR20140114821A (ko) 2012-01-18 2013-01-17 기판 처리 장치
US14/370,579 US20140346040A1 (en) 2012-01-18 2013-01-17 Substrate processing apparatus
TW102101723A TWI559818B (zh) 2012-01-18 2013-01-17 Substrate processing device
US15/378,590 US10651012B2 (en) 2012-01-18 2016-12-14 Substrate processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012008019A JP6018757B2 (ja) 2012-01-18 2012-01-18 基板処理装置

Publications (3)

Publication Number Publication Date
JP2013149722A JP2013149722A (ja) 2013-08-01
JP2013149722A5 JP2013149722A5 (enExample) 2015-03-05
JP6018757B2 true JP6018757B2 (ja) 2016-11-02

Family

ID=48799346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012008019A Active JP6018757B2 (ja) 2012-01-18 2012-01-18 基板処理装置

Country Status (5)

Country Link
US (2) US20140346040A1 (enExample)
JP (1) JP6018757B2 (enExample)
KR (2) KR20140114821A (enExample)
TW (1) TWI559818B (enExample)
WO (1) WO2013108930A1 (enExample)

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JP6009171B2 (ja) * 2012-02-14 2016-10-19 東京エレクトロン株式会社 基板処理装置
JP6317139B2 (ja) 2014-03-04 2018-04-25 東京エレクトロン株式会社 プラズマ処理装置のクリーニング方法及びプラズマ処理装置
JP6244518B2 (ja) 2014-04-09 2017-12-13 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10091594B2 (en) 2014-07-29 2018-10-02 Cochlear Limited Bone conduction magnetic retention system
CN107615890A (zh) 2015-05-11 2018-01-19 株式会社荏原制作所 电磁铁装置、电磁铁控制装置、电磁铁控制方法及电磁铁系统
US10130807B2 (en) 2015-06-12 2018-11-20 Cochlear Limited Magnet management MRI compatibility
US20160381473A1 (en) 2015-06-26 2016-12-29 Johan Gustafsson Magnetic retention device
US10917730B2 (en) * 2015-09-14 2021-02-09 Cochlear Limited Retention magnet system for medical device
JP6516649B2 (ja) * 2015-10-09 2019-05-22 東京エレクトロン株式会社 プラズマエッチング方法
JP7055054B2 (ja) * 2018-04-11 2022-04-15 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6964039B2 (ja) 2018-04-20 2021-11-10 株式会社荏原製作所 電磁石制御装置および電磁石システム
JP7222848B2 (ja) 2019-08-26 2023-02-15 株式会社荏原製作所 電磁石制御装置および電磁石システム
CN115944849A (zh) 2019-09-27 2023-04-11 科利耳有限公司 用于医用植入物系统的多极磁体
US11787008B2 (en) 2020-12-18 2023-10-17 Applied Materials, Inc. Chemical mechanical polishing with applied magnetic field
CN113699495B (zh) * 2021-06-21 2023-12-22 北京北方华创微电子装备有限公司 磁控溅射组件、磁控溅射设备及磁控溅射方法
USD1103948S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1104086S1 (en) * 2021-08-21 2025-12-02 Applied Materials, Inc. Gas distribution plate
USD1071103S1 (en) * 2022-04-11 2025-04-15 Applied Materials, Inc. Gas distribution plate
JP7685973B2 (ja) 2022-05-25 2025-05-30 東京エレクトロン株式会社 基板処理方法及び基板処理装置
USD1085029S1 (en) * 2022-07-19 2025-07-22 Applied Materials, Inc. Gas distribution plate
CN117894662B (zh) * 2024-01-15 2024-10-25 北京北方华创微电子装备有限公司 一种工艺腔室及半导体工艺设备
CN119764154B (zh) * 2025-03-07 2025-10-28 上海邦芯半导体科技有限公司 一种等离子体刻蚀设备以及刻蚀方法

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Also Published As

Publication number Publication date
US20170162367A1 (en) 2017-06-08
WO2013108930A1 (ja) 2013-07-25
TWI559818B (zh) 2016-11-21
US10651012B2 (en) 2020-05-12
KR20140114821A (ko) 2014-09-29
TW201352075A (zh) 2013-12-16
KR20190104436A (ko) 2019-09-09
US20140346040A1 (en) 2014-11-27
JP2013149722A (ja) 2013-08-01
KR102148005B1 (ko) 2020-08-25

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