JP6012998B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

Info

Publication number
JP6012998B2
JP6012998B2 JP2012077392A JP2012077392A JP6012998B2 JP 6012998 B2 JP6012998 B2 JP 6012998B2 JP 2012077392 A JP2012077392 A JP 2012077392A JP 2012077392 A JP2012077392 A JP 2012077392A JP 6012998 B2 JP6012998 B2 JP 6012998B2
Authority
JP
Japan
Prior art keywords
substrate
layer
plasma
gas
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012077392A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013207235A5 (enExample
JP2013207235A (ja
Inventor
裕規 白濱
裕規 白濱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Mechatronics Corp
Original Assignee
Shibaura Mechatronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibaura Mechatronics Corp filed Critical Shibaura Mechatronics Corp
Priority to JP2012077392A priority Critical patent/JP6012998B2/ja
Publication of JP2013207235A publication Critical patent/JP2013207235A/ja
Publication of JP2013207235A5 publication Critical patent/JP2013207235A5/ja
Application granted granted Critical
Publication of JP6012998B2 publication Critical patent/JP6012998B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2012077392A 2012-03-29 2012-03-29 プラズマ処理方法 Active JP6012998B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012077392A JP6012998B2 (ja) 2012-03-29 2012-03-29 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012077392A JP6012998B2 (ja) 2012-03-29 2012-03-29 プラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2013207235A JP2013207235A (ja) 2013-10-07
JP2013207235A5 JP2013207235A5 (enExample) 2015-05-14
JP6012998B2 true JP6012998B2 (ja) 2016-10-25

Family

ID=49525995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012077392A Active JP6012998B2 (ja) 2012-03-29 2012-03-29 プラズマ処理方法

Country Status (1)

Country Link
JP (1) JP6012998B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102328784B1 (ko) * 2017-07-11 2021-11-22 한양대학교 산학협력단 반도체 소자의 제조 방법 및 이를 위한 반도체 소자용 베이스 기판

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4544902B2 (ja) * 2004-04-26 2010-09-15 三洋電機株式会社 半導体装置及びその製造方法
JP5167052B2 (ja) * 2008-09-30 2013-03-21 パナソニック株式会社 ドライエッチング方法

Also Published As

Publication number Publication date
JP2013207235A (ja) 2013-10-07

Similar Documents

Publication Publication Date Title
TWI892179B (zh) 電漿處理裝置
CN100508134C (zh) 等离子体处理方法以及等离子体处理装置
KR102318562B1 (ko) 표면 처리 방법 및 처리 시스템
KR101204211B1 (ko) 성막 방법 및 성막 장치
US20170032955A1 (en) Plasma processing apparatus and plasma processing method
CN105489485B (zh) 处理被处理体的方法
JP6854600B2 (ja) プラズマエッチング方法、プラズマエッチング装置、および基板載置台
US11127598B2 (en) Film etching method for etching film
JP2010118549A (ja) プラズマエッチング方法及びプラズマエッチング装置
JP2006156675A (ja) エッチング方法、エッチング装置及び記憶媒体
US9070750B2 (en) Methods for reducing metal oxide surfaces to modified metal surfaces using a gaseous reducing environment
JP2010161350A (ja) 基板処理方法
KR20140109834A (ko) 금속 시드 층 상의 금속 산화물을 환원시키는 방법 및 장치
WO2007099922A1 (ja) プラズマ酸化処理方法および半導体装置の製造方法
CN112236839B (zh) 具保护性涂层的处理腔室的处理配件
KR100887271B1 (ko) 플라즈마 처리 장치
TW201933471A (zh) 電漿處理裝置
TWI389255B (zh) 積體電路結構之製備方法
CN109216182B (zh) 等离子体处理方法和等离子体处理装置
JP6012998B2 (ja) プラズマ処理方法
JP2017059750A (ja) 被処理体を処理する方法
JP5684955B1 (ja) 載置台及びプラズマ処理装置
CN102760722A (zh) 包含铜-铝电路连线的集成电路结构及其制备方法
CN111725062B (zh) 膜的蚀刻方法和等离子体处理装置
JP2005347619A (ja) プラズマ処理装置、プラズマ制御部材及びプラズマ処理方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150327

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150327

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20151221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160209

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160809

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160810

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160825

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160907

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160921

R150 Certificate of patent or registration of utility model

Ref document number: 6012998

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150