JP2013207235A5 - - Google Patents

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Publication number
JP2013207235A5
JP2013207235A5 JP2012077392A JP2012077392A JP2013207235A5 JP 2013207235 A5 JP2013207235 A5 JP 2013207235A5 JP 2012077392 A JP2012077392 A JP 2012077392A JP 2012077392 A JP2012077392 A JP 2012077392A JP 2013207235 A5 JP2013207235 A5 JP 2013207235A5
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Japan
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substrate
gas
plasma
forming
plasma processing
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JP2012077392A
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English (en)
Japanese (ja)
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JP6012998B2 (ja
JP2013207235A (ja
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Publication of JP2013207235A5 publication Critical patent/JP2013207235A5/ja
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JP2012077392A 2012-03-29 2012-03-29 プラズマ処理方法 Active JP6012998B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012077392A JP6012998B2 (ja) 2012-03-29 2012-03-29 プラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012077392A JP6012998B2 (ja) 2012-03-29 2012-03-29 プラズマ処理方法

Publications (3)

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JP2013207235A JP2013207235A (ja) 2013-10-07
JP2013207235A5 true JP2013207235A5 (enExample) 2015-05-14
JP6012998B2 JP6012998B2 (ja) 2016-10-25

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JP2012077392A Active JP6012998B2 (ja) 2012-03-29 2012-03-29 プラズマ処理方法

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JP (1) JP6012998B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102328784B1 (ko) * 2017-07-11 2021-11-22 한양대학교 산학협력단 반도체 소자의 제조 방법 및 이를 위한 반도체 소자용 베이스 기판

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4544902B2 (ja) * 2004-04-26 2010-09-15 三洋電機株式会社 半導体装置及びその製造方法
JP5167052B2 (ja) * 2008-09-30 2013-03-21 パナソニック株式会社 ドライエッチング方法

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