JP6011930B2 - シリコンウェーハの評価方法及びそのエッチング液 - Google Patents

シリコンウェーハの評価方法及びそのエッチング液 Download PDF

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Publication number
JP6011930B2
JP6011930B2 JP2012243793A JP2012243793A JP6011930B2 JP 6011930 B2 JP6011930 B2 JP 6011930B2 JP 2012243793 A JP2012243793 A JP 2012243793A JP 2012243793 A JP2012243793 A JP 2012243793A JP 6011930 B2 JP6011930 B2 JP 6011930B2
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Japan
Prior art keywords
silicon wafer
etching
etching solution
lep
solution
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JP2012243793A
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English (en)
Japanese (ja)
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JP2014093457A5 (enrdf_load_stackoverflow
JP2014093457A (ja
Inventor
善範 矢ヶ崎
善範 矢ヶ崎
典雄 大高
典雄 大高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
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Shin Etsu Handotai Co Ltd
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Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Priority to JP2012243793A priority Critical patent/JP6011930B2/ja
Priority to PCT/JP2013/077069 priority patent/WO2014069156A1/ja
Priority to TW102137056A priority patent/TW201426890A/zh
Publication of JP2014093457A publication Critical patent/JP2014093457A/ja
Publication of JP2014093457A5 publication Critical patent/JP2014093457A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Weting (AREA)
JP2012243793A 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液 Active JP6011930B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2012243793A JP6011930B2 (ja) 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液
PCT/JP2013/077069 WO2014069156A1 (ja) 2012-11-05 2013-10-04 シリコンウェーハの評価方法及びそのエッチング液
TW102137056A TW201426890A (zh) 2012-11-05 2013-10-15 矽晶圓之評價方法及其蝕刻液

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012243793A JP6011930B2 (ja) 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液

Publications (3)

Publication Number Publication Date
JP2014093457A JP2014093457A (ja) 2014-05-19
JP2014093457A5 JP2014093457A5 (enrdf_load_stackoverflow) 2014-12-04
JP6011930B2 true JP6011930B2 (ja) 2016-10-25

Family

ID=50627072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012243793A Active JP6011930B2 (ja) 2012-11-05 2012-11-05 シリコンウェーハの評価方法及びそのエッチング液

Country Status (3)

Country Link
JP (1) JP6011930B2 (enrdf_load_stackoverflow)
TW (1) TW201426890A (enrdf_load_stackoverflow)
WO (1) WO2014069156A1 (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6179530B2 (ja) 2015-01-23 2017-08-16 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
CN111662717B (zh) * 2020-07-14 2021-08-31 北京航空航天大学宁波创新研究院 一种硒化铋材料的金相腐蚀液以及金相显示方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3629694B2 (ja) * 1998-02-19 2005-03-16 信越半導体株式会社 シリコンウェーハの評価方法
JP3692812B2 (ja) * 1998-06-04 2005-09-07 信越半導体株式会社 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
JP3651440B2 (ja) * 2002-01-16 2005-05-25 信越半導体株式会社 シリコンウェーハの評価方法及びそのエッチング液

Also Published As

Publication number Publication date
WO2014069156A1 (ja) 2014-05-08
TW201426890A (zh) 2014-07-01
JP2014093457A (ja) 2014-05-19

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