TW201426890A - 矽晶圓之評價方法及其蝕刻液 - Google Patents
矽晶圓之評價方法及其蝕刻液 Download PDFInfo
- Publication number
- TW201426890A TW201426890A TW102137056A TW102137056A TW201426890A TW 201426890 A TW201426890 A TW 201426890A TW 102137056 A TW102137056 A TW 102137056A TW 102137056 A TW102137056 A TW 102137056A TW 201426890 A TW201426890 A TW 201426890A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- lep
- etching
- liquid
- etchant
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 11
- 239000010703 silicon Substances 0.000 title claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 35
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 30
- 230000007547 defect Effects 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 23
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 18
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims abstract description 13
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052740 iodine Inorganic materials 0.000 claims abstract description 12
- 239000011630 iodine Substances 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims description 102
- 239000007788 liquid Substances 0.000 claims description 77
- 229910052715 tantalum Inorganic materials 0.000 claims description 14
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 238000007654 immersion Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 230000000977 initiatory effect Effects 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 abstract description 34
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 abstract description 10
- 231100000167 toxic agent Toxicity 0.000 abstract 1
- 239000003440 toxic substance Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 77
- 230000000052 comparative effect Effects 0.000 description 31
- 239000000243 solution Substances 0.000 description 18
- 238000005498 polishing Methods 0.000 description 16
- 238000011156 evaluation Methods 0.000 description 14
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 230000000007 visual effect Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012243793A JP6011930B2 (ja) | 2012-11-05 | 2012-11-05 | シリコンウェーハの評価方法及びそのエッチング液 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201426890A true TW201426890A (zh) | 2014-07-01 |
Family
ID=50627072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102137056A TW201426890A (zh) | 2012-11-05 | 2013-10-15 | 矽晶圓之評價方法及其蝕刻液 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6011930B2 (enrdf_load_stackoverflow) |
| TW (1) | TW201426890A (enrdf_load_stackoverflow) |
| WO (1) | WO2014069156A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6179530B2 (ja) | 2015-01-23 | 2017-08-16 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| CN111662717B (zh) * | 2020-07-14 | 2021-08-31 | 北京航空航天大学宁波创新研究院 | 一种硒化铋材料的金相腐蚀液以及金相显示方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3629694B2 (ja) * | 1998-02-19 | 2005-03-16 | 信越半導体株式会社 | シリコンウェーハの評価方法 |
| JP3692812B2 (ja) * | 1998-06-04 | 2005-09-07 | 信越半導体株式会社 | 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法 |
| JP3651440B2 (ja) * | 2002-01-16 | 2005-05-25 | 信越半導体株式会社 | シリコンウェーハの評価方法及びそのエッチング液 |
-
2012
- 2012-11-05 JP JP2012243793A patent/JP6011930B2/ja active Active
-
2013
- 2013-10-04 WO PCT/JP2013/077069 patent/WO2014069156A1/ja active Application Filing
- 2013-10-15 TW TW102137056A patent/TW201426890A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014069156A1 (ja) | 2014-05-08 |
| JP6011930B2 (ja) | 2016-10-25 |
| JP2014093457A (ja) | 2014-05-19 |
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