JP2014093457A5 - - Google Patents
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- Publication number
- JP2014093457A5 JP2014093457A5 JP2012243793A JP2012243793A JP2014093457A5 JP 2014093457 A5 JP2014093457 A5 JP 2014093457A5 JP 2012243793 A JP2012243793 A JP 2012243793A JP 2012243793 A JP2012243793 A JP 2012243793A JP 2014093457 A5 JP2014093457 A5 JP 2014093457A5
- Authority
- JP
- Japan
- Prior art keywords
- etching solution
- iodide
- iodine
- evaluating
- content
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 229910052740 iodine Inorganic materials 0.000 claims 1
- 239000011630 iodine Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012243793A JP6011930B2 (ja) | 2012-11-05 | 2012-11-05 | シリコンウェーハの評価方法及びそのエッチング液 |
| PCT/JP2013/077069 WO2014069156A1 (ja) | 2012-11-05 | 2013-10-04 | シリコンウェーハの評価方法及びそのエッチング液 |
| TW102137056A TW201426890A (zh) | 2012-11-05 | 2013-10-15 | 矽晶圓之評價方法及其蝕刻液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012243793A JP6011930B2 (ja) | 2012-11-05 | 2012-11-05 | シリコンウェーハの評価方法及びそのエッチング液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014093457A JP2014093457A (ja) | 2014-05-19 |
| JP2014093457A5 true JP2014093457A5 (enrdf_load_stackoverflow) | 2014-12-04 |
| JP6011930B2 JP6011930B2 (ja) | 2016-10-25 |
Family
ID=50627072
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012243793A Active JP6011930B2 (ja) | 2012-11-05 | 2012-11-05 | シリコンウェーハの評価方法及びそのエッチング液 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6011930B2 (enrdf_load_stackoverflow) |
| TW (1) | TW201426890A (enrdf_load_stackoverflow) |
| WO (1) | WO2014069156A1 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6179530B2 (ja) | 2015-01-23 | 2017-08-16 | 信越半導体株式会社 | 貼り合わせｓｏｉウェーハの製造方法 |
| CN111662717B (zh) * | 2020-07-14 | 2021-08-31 | 北京航空航天大学宁波创新研究院 | 一种硒化铋材料的金相腐蚀液以及金相显示方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3629694B2 (ja) * | 1998-02-19 | 2005-03-16 | 信越半導体株式会社 | シリコンウェーハの評価方法 |
| JP3692812B2 (ja) * | 1998-06-04 | 2005-09-07 | 信越半導体株式会社 | 窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法 |
| JP3651440B2 (ja) * | 2002-01-16 | 2005-05-25 | 信越半導体株式会社 | シリコンウェーハの評価方法及びそのエッチング液 |
-
2012
- 2012-11-05 JP JP2012243793A patent/JP6011930B2/ja active Active
-
2013
- 2013-10-04 WO PCT/JP2013/077069 patent/WO2014069156A1/ja active Application Filing
- 2013-10-15 TW TW102137056A patent/TW201426890A/zh unknown