JP6004319B2 - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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JP6004319B2
JP6004319B2 JP2012087764A JP2012087764A JP6004319B2 JP 6004319 B2 JP6004319 B2 JP 6004319B2 JP 2012087764 A JP2012087764 A JP 2012087764A JP 2012087764 A JP2012087764 A JP 2012087764A JP 6004319 B2 JP6004319 B2 JP 6004319B2
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silicon nitride
nitride film
film
silicon
semiconductor device
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JP2013219151A (ja
JP2013219151A5 (enExample
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務 駒谷
務 駒谷
俊介 倉知
俊介 倉知
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2012087764A priority Critical patent/JP6004319B2/ja
Priority to US13/857,510 priority patent/US8921950B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/797—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being in source or drain regions, e.g. SiGe source or drain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
JP2012087764A 2012-04-06 2012-04-06 半導体装置および半導体装置の製造方法 Active JP6004319B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012087764A JP6004319B2 (ja) 2012-04-06 2012-04-06 半導体装置および半導体装置の製造方法
US13/857,510 US8921950B2 (en) 2012-04-06 2013-04-05 Semiconductor device

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Application Number Priority Date Filing Date Title
JP2012087764A JP6004319B2 (ja) 2012-04-06 2012-04-06 半導体装置および半導体装置の製造方法

Publications (3)

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JP2013219151A JP2013219151A (ja) 2013-10-24
JP2013219151A5 JP2013219151A5 (enExample) 2015-05-21
JP6004319B2 true JP6004319B2 (ja) 2016-10-05

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JP (1) JP6004319B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6197344B2 (ja) * 2013-04-18 2017-09-20 住友電気工業株式会社 半導体装置
US9761438B1 (en) * 2014-05-08 2017-09-12 Hrl Laboratories, Llc Method for manufacturing a semiconductor structure having a passivated III-nitride layer
JP6258148B2 (ja) 2014-08-05 2018-01-10 株式会社東芝 半導体装置
CN105118785A (zh) * 2015-09-02 2015-12-02 深圳大学 一种氮化镓异质结场效应晶体管及其形成方法
JP6536318B2 (ja) * 2015-09-24 2019-07-03 三菱電機株式会社 半導体装置及びその製造方法
CN105304722B (zh) * 2015-09-24 2018-09-04 京东方科技集团股份有限公司 一种薄膜晶体管及其制备方法、显示基板、显示装置
CN105470310A (zh) * 2016-01-21 2016-04-06 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板和显示装置
JP6908240B2 (ja) * 2017-06-13 2021-07-21 住友電工デバイス・イノベーション株式会社 窒化物半導体トランジスタの製造方法及び窒化物半導体トランジスタ
DE102017127182B4 (de) * 2017-11-17 2024-10-02 Ferdinand-Braun-Institut gGmbH, Leibniz- Institut für Höchstfrequenztechnik Gate-Struktur
WO2019198226A1 (ja) * 2018-04-13 2019-10-17 三菱電機株式会社 電界効果型トランジスタ
JP7139774B2 (ja) * 2018-08-16 2022-09-21 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法及び増幅器
US10707322B2 (en) * 2018-10-22 2020-07-07 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
JP7163806B2 (ja) * 2019-02-05 2022-11-01 富士通株式会社 化合物半導体装置、化合物半導体装置の製造方法及び増幅器

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
US5041888A (en) * 1989-09-18 1991-08-20 General Electric Company Insulator structure for amorphous silicon thin-film transistors
JP5125512B2 (ja) * 2005-09-30 2013-01-23 日本電気株式会社 電界効果トランジスタ
KR20080008562A (ko) * 2006-07-20 2008-01-24 삼성전자주식회사 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치
JP2008140854A (ja) * 2006-11-30 2008-06-19 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2008305894A (ja) 2007-06-06 2008-12-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4719210B2 (ja) * 2007-12-28 2011-07-06 富士通株式会社 半導体装置及びその製造方法
WO2010122628A1 (ja) * 2009-04-20 2010-10-28 富士通株式会社 化合物半導体装置及びその製造方法
JP5595685B2 (ja) * 2009-07-28 2014-09-24 パナソニック株式会社 半導体装置
JP5602450B2 (ja) * 2010-02-12 2014-10-08 三菱電機株式会社 薄膜トランジスタ、その製造方法、及び表示装置
JP5649347B2 (ja) * 2010-07-20 2015-01-07 住友電工デバイス・イノベーション株式会社 半導体装置
JP2012164869A (ja) * 2011-02-08 2012-08-30 Renesas Electronics Corp 半導体装置およびその製造方法
JP5776217B2 (ja) * 2011-02-24 2015-09-09 富士通株式会社 化合物半導体装置

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US8921950B2 (en) 2014-12-30
US20130264657A1 (en) 2013-10-10

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